High strain embedded-SiGe via low temperature reduced pressure chemical vapor deposition

2012 ◽  
Vol 520 (8) ◽  
pp. 3175-3178 ◽  
Author(s):  
Hong He ◽  
Paul Brabant ◽  
Keith Chung ◽  
Manabu Shinriki ◽  
Thomas Adam ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
High Strain ◽  
Chemical Vapor ◽  
Reduced Pressure ◽  
Pressure Chemical

Low temperature selective Si epitaxy by reduced pressure chemical vapor deposition introducing periodic deposition and etching cycles with SiH4, H2 and HCl

2000 ◽  
Vol 609 ◽  
Author(s):  
Hong-Seung Kim ◽  
Kyu-Hwan Shim ◽  
Jeong-Yong Lee ◽  
Jin-Yeong Kang
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Etching Process ◽  
Reduced Pressure ◽  
Gas System ◽  
Pressure Chemical ◽  
Si Epitaxy

ABSTRACTThis paper presents the experimental results of selective Si epitaxial growth from 650 °C to 700 °C on (100) silicon wafers with oxide patterns using reduced pressure chemical vapor deposition with the SiH4-HCl-H2 gas system. In addition, an HCl etching process is introduced and the conditions of the deposition and etching processes are addressed to sustain the selectivity. As a result, we noted that the addition of HCl serves not only to reduce the growth rate on bare Si, but also to suppress the nucleation on SiO2. In these experiments it has been also observed that the Si layer was grown to 3 nm while sustaining the selectivity. Moreover, further introduction of the HCl etching process following the deposition allowed a 50 nm-thick film to sustain the selectivity for twenty periods.

scholarly journals Ge / SiGe Multi Quantum Well Fabrication by Using Reduced Pressure Chemical Vapor Deposition

2019 ◽  
Author(s):  
Y. Yamamoto ◽  
O. Skibitzki ◽  
M.A. Schubert ◽  
M. Scuderi ◽  
F. Reichmann ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Quantum Well ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Reduced Pressure ◽  
Pressure Chemical ◽  
Multi Quantum Well

Ge/SiGe multiple quantum well fabrication by reduced-pressure chemical vapor deposition

2020 ◽  
Vol 59 (SG) ◽  
pp. SGGK10
Author(s):  
Yuji Yamamoto ◽  
Oliver Skibitzki ◽  
Markus Andreas Schubert ◽  
Mario Scuderi ◽  
Felix Reichmann ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Quantum Well ◽  
Vapor Deposition ◽  
Multiple Quantum Well ◽  
Chemical Vapor ◽  
Multiple Quantum ◽  
Reduced Pressure ◽  
Pressure Chemical

Growth of Antimony Thin Films Using Perbenzylated Organometallic Precursors

1998 ◽  
Vol 547 ◽  
Author(s):  
Michael P. Remington ◽  
Smuruthi Kamepalli ◽  
Philip Boudjouk ◽  
Bryan R. Jarabek ◽  
Dean G. Grier ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Carbon ◽  
Design Strategies ◽  
Glass Substrates ◽  
Pressure Chemical ◽  
Organometallic Precursors

AbstractThe low temperature (ca. 300°C) deposition of antimony films by low-pressure chemical vapor deposition (LPCVD) on glass substrates from tribenzylantimony, Bn3Sb, is described. The facile elimination of the benzyl ligands results in preferentially oriented antimony films with low carbon content. The pyrolysis, decomposition mechanism and precursor design strategies are discussed. In addition, the deposition of bismuth from tribenzylbismuth, Bn3Bi, is presented. The potential for alloy growth using these precursors is discussed. Resulting films were characterized by XRD, SEM, and AFM.

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