Comparison of Ohmic contact resistances of n- and p-type Ge source/drain and their impact on transport characteristics of Ge metal oxide semiconductor field effect transistors

Jungwoo Oh; Jeff Huang; Yen-Ting Chen; Injo Ok; Kanghoon Jeon; Se-Hoon Lee; Barry Sassman; Wei-Yip Loh; Hi-Deok Lee; Dea-Hong Ko; Prashant Majhi; Paul Kirsch; Raj Jammy

doi:10.1016/j.tsf.2011.06.025

Comparison of Ohmic contact resistances of n- and p-type Ge source/drain and their impact on transport characteristics of Ge metal oxide semiconductor field effect transistors

Thin Solid Films ◽

10.1016/j.tsf.2011.06.025 ◽

2011 ◽

Vol 520 (1) ◽

pp. 442-444 ◽

Cited By ~ 3

Author(s):

Jungwoo Oh ◽

Jeff Huang ◽

Yen-Ting Chen ◽

Injo Ok ◽

Kanghoon Jeon ◽

...

Keyword(s):

Metal Oxide ◽

Ohmic Contact ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

P Type

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Selective Growth of B- and C-Doped SiGe Layers in Unprocessed and Recessed Si Openings for p-type Metal-Oxide-Semiconductor Field-Effect Transistors Application

Journal of The Electrochemical Society ◽

10.1149/1.3363736 ◽

2010 ◽

Vol 157 (6) ◽

pp. H633 ◽

Cited By ~ 13

Author(s):

M. Kolahdouz ◽

P. Tabib Zadeh Adibi ◽

A. Afshar Farniya ◽

S. Shayestehaminzadeh ◽

E. Trybom ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Selective Growth ◽

Oxide Semiconductor ◽

P Type

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Impact of Ge Content on Flicker Noise Behavior of Strained-SiGe p-Type Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.04c036 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C036 ◽

Cited By ~ 5

Author(s):

San-Lein Wu ◽

Chung Yi Wu ◽

Hau-Yu Lin ◽

Cheng-Wen Kuo ◽

Shin-Hsin Chen ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Flicker Noise ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

P Type ◽

Strained Sige

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Correlation between Charge Pumping Method and Direct-Current Current Voltage Method in p-Type Metal-Oxide-Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.38.4696 ◽

1999 ◽

Vol 38 (Part 1, No. 8) ◽

pp. 4696-4698 ◽

Cited By ~ 6

Author(s):

Bin-Bin Jie ◽

Kok-Hooi Ng ◽

Ming-Fu Li ◽

Keng-Foo Lo

Keyword(s):

Metal Oxide ◽

Direct Current ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Charge Pumping ◽

Current Voltage ◽

P Type

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Compact Hot-Electron Induced Oxide Trapping Charge and Post-Stress Drain Current Modeling for Buried-Channel p-Type Metal–Oxide–Semiconductor Field-Effect-Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.6200 ◽

2008 ◽

Vol 47 (8) ◽

pp. 6200-6204 ◽

Cited By ~ 1

Author(s):

Chorng-Jye Sheu

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Drain Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Electron ◽

Buried Channel ◽

P Type ◽

Post Stress

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Strained Ge channel p-type metal–oxide–semiconductor field-effect transistors grown on Si1−xGex/Si virtual substrates

Applied Physics Letters ◽

10.1063/1.1417515 ◽

2001 ◽

Vol 79 (20) ◽

pp. 3344-3346 ◽

Cited By ~ 194

Author(s):

Minjoo L. Lee ◽

C. W. Leitz ◽

Z. Cheng ◽

A. J. Pitera ◽

T. Langdo ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

P Type

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Characteristics of Gate Current Random Telegraph Signal Noise in SiON/HfO2/TaN p-Type Metal–Oxide–Semiconductor Field-Effect Transistors under Negative Bias Temperature Instability Stress Condition

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.04dc08 ◽

2010 ◽

Vol 49 (4) ◽

pp. 04DC08

Author(s):

Liangliang Zhang ◽

Changze Liu ◽

Runsheng Wang ◽

Ru Huang ◽

Tao Yu ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Stress Condition ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Bias Temperature Instability ◽

P Type

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Vox/Eox-Driven Breakdown of Ultrathin SiON Gate Dielectrics in p-Type Metal Oxide Semiconductor Field Effect Transistors under Low-Voltage Inversion Stress

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.7 ◽

2007 ◽

Vol 46 (1) ◽

pp. 7-13 ◽

Cited By ~ 2

Author(s):

Shimpei Tsujikawa ◽

Katsuya Shiga ◽

Hiroshi Umeda ◽

Jiro Yugami

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Low Voltage ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

P Type

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Hot Carrier Degradations of Dynamic Threshold Silicon on Insulator p-Type Metal–Oxide–Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.1300 ◽

2004 ◽

Vol 43 (4A) ◽

pp. 1300-1304

Author(s):

Tien-Sheng Chao ◽

Yao-Jen Lee ◽

Chun-Yang Huang ◽

Horng-Chih Lin ◽

Yiming Li ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Dynamic Threshold ◽

Hot Carrier ◽

P Type

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Drive current enhancement in p-type metal–oxide–semiconductor field-effect transistors under shear uniaxial stress

Applied Physics Letters ◽

10.1063/1.1841452 ◽

2004 ◽

Vol 85 (25) ◽

pp. 6188-6190 ◽

Cited By ~ 25

Author(s):

L. Shifren ◽

X. Wang ◽

P. Matagne ◽

B. Obradovic ◽

C. Auth ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Uniaxial Stress ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Drive Current ◽

P Type

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Hole mobility enhancements in strained Si/Si1−yGey p-type metal-oxide-semiconductor field-effect transistors grown on relaxed Si1−xGex (x

Applied Physics Letters ◽

10.1063/1.1423774 ◽

2001 ◽

Vol 79 (25) ◽

pp. 4246-4248 ◽

Cited By ~ 92

Author(s):

C. W. Leitz ◽

M. T. Currie ◽

M. L. Lee ◽

Z.-Y. Cheng ◽

D. A. Antoniadis ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Hole Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Si ◽

P Type

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