Growth kinetics of nc-Si:H deposited at 200°C by hot-wire chemical vapour deposition

2011 ◽  
Vol 519 (14) ◽  
pp. 4437-4441 ◽  
Author(s):  
C.J. Oliphant ◽  
C.J. Arendse ◽  
D. Knoesen ◽  
T.F.G. Muller ◽  
S. Prins ◽  
...  
Keyword(s):  
Chemical Vapour Deposition ◽  
Growth Kinetics ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Hot Wire ◽  
Kinetics Of

scholarly journals The Growth Kinetics of Multilayer Graphene Grown on Al2O3 Substrate by Chemical Vapour Deposition

2016 ◽  
Vol 148 ◽  
pp. 1295-1302
Author(s):  
May Ali ◽  
Suraya Abdul-Rashid ◽  
Mohd Nizar Hamidon ◽  
Faizah Md Yasin
Keyword(s):  
Chemical Vapour Deposition ◽  
Growth Kinetics ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Multilayer Graphene ◽  
Al2o3 Substrate ◽  
Kinetics Of

Large-scale synthesis of single-crystal molybdenum trioxide nanobelts by hot-wire chemical vapour deposition

2015 ◽  
Vol 619 ◽  
pp. 406-410 ◽  
Author(s):  
Jianjun Chen ◽  
Mingming Wang ◽  
Xin Liao ◽  
Zhaoxiang Liu ◽  
Judong Zhang ◽  
...  
Keyword(s):  
Single Crystal ◽  
Chemical Vapour Deposition ◽  
Large Scale ◽  
Vapour Deposition ◽  
Molybdenum Trioxide ◽  
Chemical Vapour ◽  
Hot Wire ◽  
Large Scale Synthesis

Improved Efficiency of Single Junction Microcrystalline Silicon n-i-p Solar Cells with an i-Layer Made by Hot-Wire CVD

2007 ◽  
Vol 989 ◽  
Author(s):  
Hongbo Li ◽  
Ronald H.J. Franken ◽  
Robert L. Stolk ◽  
C. H.M. van der Werf ◽  
Jan-Willem A. Schuttauf ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Solar Cells ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Hot Wire ◽  
Microcrystalline Silicon ◽  
Single Junction ◽  
Layer Deposition ◽  
P Cells

AbstractThe influence of the surface roughness of Ag/ZnO coated substrates on the AM1.5 J-V characteristics of microcrystalline silicon (μc-Si:H) solar cells with an i-layer made by the hot-wire chemical vapour deposition (HWCVD) technique is discussed. Cells deposited on substrates with an intermediate rms roughness show the highest efficiency. When using reverse hydrogen profiling during i-layer deposition, an efficiency of 8.5 % was reached for single junction μc-Si:H n-i-p cells, which is the highest for μc-Si:H n-i-p cells with a hot-wire i-layer.

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