High mobility bottom gate nanocrystalline-Si thin-film transistors

2011 ◽  
Vol 519 (11) ◽  
pp. 3922-3924 ◽  
Author(s):  
Masaki Hara
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Si Thin Film ◽  
Bottom Gate ◽  
Nanocrystalline Si

Double-metal-gate nanocrystalline Si thin film transistors with flexible threshold voltage controllability

2013 ◽  
Vol 103 (20) ◽  
pp. 203501 ◽  
Author(s):  
Uio-Pu Chiou ◽  
Jia-Min Shieh ◽  
Chih-Chao Yang ◽  
Wen-Hsien Huang ◽  
Yo-Tsung Kao ◽  
...  
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Metal Gate ◽  
Si Thin Film ◽  
Nanocrystalline Si

Electrical Conductions of High Mobility Poly-Si Thin Film Transistors at Low Temperatures

1994 ◽  
Vol 33 (Part 2, No. 3B) ◽  
pp. L409-L412 ◽  
Author(s):  
Tadashi Serikawa ◽  
Seiiti Shirai ◽  
Sadao Takaoka ◽  
Kazuo Murase ◽  
Shuichi Ishida
Keyword(s):  
Thin Film ◽  
Low Temperatures ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Si Thin Film

P Channel Mosfet Devices in Nanocrystalline Silicon

2006 ◽  
Vol 910 ◽  
Author(s):  
Durga Panda ◽  
Max Noack ◽  
Vikram Dalal
Keyword(s):  
Thin Film ◽  
Silicon Dioxide ◽  
Phosphorus Content ◽  
Thin Film Transistor ◽  
Nanocrystalline Silicon ◽  
Simple Process ◽  
P Type ◽  
Si Thin Film ◽  
Bottom Gate ◽  
Nanocrystalline Si

AbstractWe report on the growth and properties of p-channel nanocrystalline Si thin film transistor (TFT) devices. In contrast to previous work, the devices are fabricated in n-body nanocrystalline Si. The doping of the n-body is systematically changed by doping with ppm levels of phosphorous. The threshold voltage was found to change systematically as phosphorus content increased. The TFT devices are of the bottom-gate type, grown on oxidized Si wafers. Source and drain contacts were provided by using either plasma grown p type nanocrystalline layers, or by the simple process of Al diffusion. A top layer of plasma-deposited silicon dioxide was found to decrease the off current significantly. High on-off current ratios exceeding 106 were obtained. Hole mobilities in the devices were consistently good, with the best mobility being in the range of ~1.3 cm2/V-s.

The Effects of Nanometal-Induced Crystallization on the Electrical Characteristics of Bottom-Gate Poly-Si Thin-Film Transistors

2011 ◽  
Vol 11 (7) ◽  
pp. 5612-5617 ◽  
Author(s):  
I-Che Lee ◽  
Po-Yu Yang ◽  
Ming-Jhe Hu ◽  
Jyh-Liang Wang ◽  
Chun-Chien Tsai ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Electrical Characteristics ◽  
Induced Crystallization ◽  
Si Thin Film ◽  
Bottom Gate

High-Mobility Bottom-Gate Thin-Film Transistors with Laser-Crystallized and Hydrogen-Radical-Annealed Polysilicon Films

1991 ◽  
Vol 30 (Part 1, No. 12B) ◽  
pp. 3704-3709 ◽  
Author(s):  
Kazuhiro Shimizu ◽  
Hideki Hosoya ◽  
Osamu Sugiura ◽  
Masakiyo Matsumura
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Polysilicon Films ◽  
Hydrogen Radical ◽  
Bottom Gate

Characteristics of Bottom Gate Thin Film Transistors with Silicon rich poly-Si1-xGex and poly-Si fabricated by Reactive Thermal Chemical Vapor Deposition

2003 ◽  
Vol 762 ◽  
Author(s):  
Kousaku Shimizu ◽  
JianJun Zhang ◽  
Jeong-Woo Lee ◽  
Jun-ichi Hanna
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Chemical Vapor ◽  
Hydrogen Treatment ◽  
Glass Substrates ◽  
Silicon Thin Films ◽  
High Benefit ◽  
Bottom Gate

AbstractIn the fabrication of thin film transistors (TFTs), little attention has been paid to the polycrystalline silicon thin films prepared at low temperatures where the glass substrates are adopted so far. Since the film quality is not sufficient to achieve high mobility, e.g., over 50 cm2/Vs in spite of high benefit in their industrial fabrication. We have fabricated bottom gate TFTs with poly-Si and poly- Si1-xGex thin films deposited at 450°C by newly developed low-temperature LPCVD technique and characterized electrical characteristics of the TFTs: disilane and a small amount of either germanium tetrafluoride or fluorine were used as material gases and helium as carrier gas. Thermal annealing for dopant activation and atomic hydrogen treatment for defect passivation were carried out. We found that the defect elimination process is important for improving TFT performance significantly. Finally the mobility of p-channel and n-channel TFTs have attained 36.3-54.4 cm2/Vs and 57 cm2/Vs, respectively.

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