Dependence of photovoltaic parameters on grain size and density of states in n+–i–p+ and p+–i–n+ polycrystalline silicon solar cells

2007 ◽  
Vol 516 (1) ◽  
pp. 84-90 ◽  
Author(s):  
B. Zebentout ◽  
Z. Benamara ◽  
T. Mohammed-Brahim
2014 ◽  
Vol 1670 ◽  
Author(s):  
Joel B. Li ◽  
Bruce M. Clemens

ABSTRACTGrain boundaries (GBs) in polycrystalline silicon (poly-Si) thin film solar cells are frequently found to be detrimental for device performance. Biaxiallytextured silicon with grains that are well-aligned in-plane and out-of-plane can possess fewer GB defects. In this work, we use TCAD Sentaurus device simulator and known experimental work to investigate and quantify the potential performance gains of biaxially-textured silicon. Simulation shows there can be performance gain from well-aligned grains when GB defects dominate carrier recombination or when grains are small. On the other hand, when intra-grain defects dominate recombination and grains are large, well-aligned grains do not lead to much performance gain. Another important result from our simulation is when intra-grain and GB defects are few, Jsc is almost independent of grain size while Voc drops with decreasing grain size.


1997 ◽  
Vol 81 (11) ◽  
pp. 7635-7640 ◽  
Author(s):  
Mitsuru Imaizumi ◽  
Tadashi Ito ◽  
Masafumi Yamaguchi ◽  
Kyojiro Kaneko

2011 ◽  
Vol 10 ◽  
pp. 55-60 ◽  
Author(s):  
Aimi Abass ◽  
Björn Maes ◽  
Dries Van Gestel ◽  
Koen Van Wichelen ◽  
Marc Burgelman

2012 ◽  
Vol 21 (6) ◽  
pp. 1377-1383 ◽  
Author(s):  
Jonathon Dore ◽  
Rhett Evans ◽  
Ute Schubert ◽  
Bonne D. Eggleston ◽  
Daniel Ong ◽  
...  

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