Short‐circuit current of polycrystalline silicon solar cells with respect to grain size and grain‐boundary recombination velocity

1986 ◽  
Vol 59 (2) ◽  
pp. 660-662 ◽  
Author(s):  
C. A. Dimitriadis
Keyword(s):  
Grain Size ◽  
Solar Cells ◽  
Grain Boundary ◽  
Polycrystalline Silicon ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Silicon Solar Cells ◽  
Recombination Velocity

Effects of Nitrogen Addition on the Properties of a-SiCN:H Films Using Hexamethyldisilazane

2007 ◽  
Vol 989 ◽  
Author(s):  
Amornrat Limmanee ◽  
Michio Otsubo ◽  
Tsutomu Sugiura ◽  
Takehiko Sato ◽  
Shinsuke Miyajima ◽  
...  
Keyword(s):  
Solar Cells ◽  
Polycrystalline Silicon ◽  
Silicon Solar Cell ◽  
Short Circuit ◽  
Nitrogen Concentration ◽  
Short Circuit Current ◽  
Nitrogen Addition ◽  
Silicon Solar Cells ◽  
Gas Mixture ◽  
Improved Performance

AbstractWe deposited a-SiCN:H films by HWCVD using a gas mixture of hexamethyldisilazane, H2 and N2, and fabricated cast polycrystalline silicon solar cells with the a-SiCN:H passivation and anti-reflection layer. N2 addition led to the reduction of the refractive index of the a-SiCN:H films due to the increase in nitrogen concentration of the films. This improved performance of the antireflection layer. The advantage of adding N2 to the process was demonstrated by the improvement in short circuit current (JSC) and efficiency of cast polycrystalline silicon solar cells. At present, the efficiency of cast polycrystalline silicon solar cell using a-SiCN:H film as a passivation layer reached 14.2%.

The influence of emitter resistance on the electrical parameters of mono- and multicrystalline silicon solar cells

2019 ◽  
Vol 36 (3) ◽  
pp. 90-94
Author(s):  
Barbara Swatowska ◽  
Piotr Panek ◽  
Dagmara Michoń ◽  
Aleksandra Drygała
Keyword(s):  
Solar Cells ◽  
Contact Resistance ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Multicrystalline Silicon ◽  
Silicon Solar Cells ◽  
Electrical Parameters ◽  
Content Type ◽  
Diffusion Parameters

Purpose The purpose of this study was the comparison and analysis of the electrical parameters of two kinds of silicon solar cells (mono- and multicrystalline) of different emitter resistance. Design/methodology/approach By controlling of diffusion parameters, silicon mono- (Cz-Si) and multicrystalline (mc-Si) solar cells with different emitter resistance values were produced – 22 and 48 Ω/□. On the basis of current-voltage measurements of cells and contact resistance mapping, the properties of final solar cells based on two different materials were compared. Additionally, the influence of temperature on PV cells efficiency and open circuit voltage (Uoc) were investigated. The PC1D simulation was useful to determine spectral dependence of external quantum efficiency of solar cells with different emitter resistance. The silicon solar cells of 25 cm2 area and 240 µm thickness were investigated. Findings Considering the all stages of cell technology, the best structure is silicon solar cell with sheet resistance (Rsheet) of 45-48 Ω/□. Producing of an emitter with this resistance allowed to obtain cells with a fill factor between 0.725 and 0.758, Uoc between 585 and 612 mV, short circuit current (Isc) between 724 and 820 mA. Originality/value Measurements and analysis confirmed that mono- and multicrystalline silicon solar cells with 48 Ω/□ emitter resistance have better parameters than cells with Rsheet of 22 Ω/□. The contact resistance is the highest for mc-Si with Rsheet of 48 Ω/□ and reaches the value 3.8 Ωcm.

scholarly journals Nanomolded buried light-scattering (BLiS) back-reflectors using dielectric nanoparticles for light harvesting in thin-film silicon solar cells

2020 ◽  
Vol 11 ◽  
pp. 2
Author(s):  
Derese Desta ◽  
Rita Rizzoli ◽  
Caterina Summonte ◽  
Rui N. Pereira ◽  
Arne Nylandsted Larsen ◽  
...  
Keyword(s):  
Solar Cells ◽  
Light Scattering ◽  
Silicon Nanoparticles ◽  
Short Circuit ◽  
Spatial Separation ◽  
Short Circuit Current ◽  
Silicon Solar Cells ◽  
Growth Interface ◽  
Inverted Pyramid ◽  
Back Reflector

The article presents a nanoparticle-based buried light-scattering (BLiS) back-reflector design realized through a simplified nanofabrication technique for the purpose of light-management in solar cells. The BLiS structure consists of a flat silver back-reflector with an overlying light-scattering bilayer which is made of a TiO2 dielectric nanoparticles layer with micron-sized inverted pyramidal cavities, buried under a flat-topped silicon nanoparticles layer. The optical properties of this BLiS back-reflector show high broadband and wide angular distribution of diffuse light-scattering. The efficient light-scattering by the buried inverted pyramid back-reflector is shown to effectively improve the short-circuit-current density and efficiency of the overlying n-i-p amorphous silicon solar cells up to 14% and 17.5%, respectively, compared to the reference flat solar cells. A layer of TiO2 nanoparticles with exposed inverted pyramid microstructures shows equivalent light scattering but poor fill factors in the solar cells, indicating that the overlying smooth growth interface in the BLiS back-reflector helps to maintain a good fill factor. The study demonstrates the advantage of spatial separation of the light-trapping and the semiconductor growth layers in the photovoltaic back-reflector without sacrificing the optical benefit.

Optical Simulation and Investigation of the Effect of Hysteresis on the Perovskite Solar Cells

NANO ◽  
2019 ◽  
Vol 14 (10) ◽  
pp. 1950127 ◽  
Author(s):  
Farhad Jahantigh ◽  
S. M. Bagher Ghorashi
Keyword(s):  
Grain Size ◽  
Solar Cells ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Perovskite Solar Cells ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Transport Layer

Perovskite solar cells have recently been considered to be an auspicious candidate for the advancement of future photovoltaic research. A power conversion efficiency (PCE) as high as 22% has been reported to be reached, which can be obtained through an inexpensive and high-throughput solution process. Modeling and simulation of these cells can provide deep insights into their fundamental mechanism of performance. In this paper, two different perovskite solar cells are designed by using COMSOL Multiphysics to optimize the thickness of each layer and the overall thickness of the cell. Electric potential, electron and hole concentrations, generation rate, open-circuit voltage, short-circuit current and the output power were calculated. Finally, PCEs of 20.7% and 26.1% were predicted. Afterwards, according to the simulation results, the role of the hole transport layer (HTL) was investigated and the optimum thickness of the perovskite was measured to be 200[Formula: see text]nm for both cells. Therefore, the spin coating settings are selected so that a coating with this thickness for cell 1 is deposited. In order to compare the performance of HTM layer, solar cells with a Spiro-OMeTAD HTM and without the HTM layer in their structure were fabricated. According to the obtained photovoltaic properties, the solar cell made with Spiro-OMeTAD has a more favorable open-circuit voltage ([Formula: see text]), short-circuit current density ([Formula: see text]), fill factor (FF) and PCE compared to the cell without the HTM layer. Also, hysteresis depends strongly on the perovskite grain size, because large average grain size will lead to an increase in the grain’s contact surface area and a decrease in the density of grain boundaries. Finally, according to the results, it was concluded that, in the presence of a hole transport layer, ion transfer was better and ion accumulation was less intense, and therefore, the hysteresis decreases.

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