Coulomb blockade induced negative differential resistance effect in a self-assembly Si quantum dots array at room temperature

2007 ◽  
Vol 515 (13) ◽  
pp. 5466-5470 ◽  
Author(s):  
L.W. Yu ◽  
K.J. Chen ◽  
J. Song ◽  
J.M. Wang ◽  
J. Xu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Self Assembly ◽  
Coulomb Blockade ◽  
Negative Differential Resistance ◽  
Room Temperature ◽  
Differential Resistance ◽  
Negative Differential Resistance Effect ◽  
Si Quantum Dots

Overwhelming coexistence of negative differential resistance effect and RRAM

2018 ◽  
Vol 20 (31) ◽  
pp. 20635-20640 ◽  
Author(s):  
Tao Guo ◽  
Bai Sun ◽  
Yu Zhou ◽  
Hongbin Zhao ◽  
Ming Lei ◽  
...  
Keyword(s):  
Negative Differential Resistance ◽  
Room Temperature ◽  
Differential Resistance ◽  
Negative Differential Resistance Effect

An overwhelming coexistence of NDR effect and RS memory behavior at room temperature was observed based on Ag/CZTSe/Mo devices.

Mechanisms of negative differential resistance in glutamine-functionalized WS2 quantum dots

2021 ◽  
Author(s):  
Denice Feria ◽  
Sonia Sharma ◽  
Yu-Ting Chen ◽  
Zhi-Ying Weng ◽  
Kuo-Pin Chiu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Negative Differential Resistance ◽  
Electronic Devices ◽  
Transition Metal Dichalcogenides ◽  
Differential Resistance ◽  
Voltage Range ◽  
Current Voltage ◽  
Metal Dichalcogenides ◽  
Current Voltage Characteristics ◽  
Memory Applications

Abstract Understanding the mechanism of the negative differential resistance (NDR) in transition metal dichalcogenides is essential for fundamental science and the development of electronic devices. Here, the NDR of the current-voltage characteristics was observed based on the glutamine-functionalized WS2 quantum dots (QDs). The NDR effect can be adjusted by varying the applied voltage range, air pressure, surrounding gases, and relative humidity. A peak-to-valley current ratio as high as 6.3 has been achieved at room temperature. Carrier trapping induced by water molecules was suggested to be responsible for the mechanism of the NDR in the glutamine-functionalized WS2 QDs. Investigating the NDR of WS2 QDs may promote the development of memory applications and emerging devices.

Sign in / Sign up

Export Citation Format

Share Document