Investigation of relation between Ga concentration and defect levels of Al/Cu(In,Ga)Se2 Schottky junctions using admittance spectroscopy

2007 ◽  
Vol 515 (15) ◽  
pp. 6208-6211 ◽  
Author(s):  
T. Sakurai ◽  
N. Ishida ◽  
S. Ishizuka ◽  
K. Matsubara ◽  
K. Sakurai ◽  
...  
Keyword(s):  
Admittance Spectroscopy ◽  
Defect Levels ◽  
Schottky Junctions

Correlation Between Oxygen Composition and Electrical Properties in NiO Thin Films for Resistive Random Access Memory

2010 ◽  
Vol 1250 ◽  
Author(s):  
Yusuke Nishi ◽  
Tatsuya Iwata ◽  
Tsunenobu Kimoto
Keyword(s):  
Thin Films ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Resistance Switching ◽  
Admittance Spectroscopy ◽  
Low Oxygen ◽  
Access Memory ◽  
Switching Operation ◽  
Defect Levels

AbstractAdmittance spectroscopy measurement has been performed on NiOx thin films with various oxygen compositions (x=1.0-1.2) in order to characterize localized defect levels. The activation energy and concentration of localized defect levels in NiOx films with low oxygen composition (x≤1.07) are 120-170 meV and lower than 2×1019 cm-3, respectively. From I-V measurement of the Pt/NiOx/Pt structures, samples with high oxygen composition (x≥1.10) did not show resistance switching operation, while samples with low oxygen composition (x≤1.07) did. The best oxygen composition of NiOx thin films turned out to be 1.07 in order to realize repeatable and stable resistance switching operation.

Characterization of Defects in N-Type 6H-SiC Single Crystals by Optical Admittance Spectroscopy

1994 ◽  
Vol 339 ◽  
Author(s):  
A. O. Evwaraye ◽  
S. R. Smith ◽  
W. C. Mitchel
Keyword(s):  
Transition Metal ◽  
Single Crystals ◽  
Admittance Spectroscopy ◽  
Donor Atom ◽  
Deep Defect ◽  
Metal Impurities ◽  
Transition Metal Impurities ◽  
Defect Levels ◽  
Type Conduction

ABSTRACTOptical admittance spectroscopy is a technique for measuring the conductance and capacitance of a junction under illumination as a function of the wavelength of the light and the frequency of the measuring AC signal. This technique has been applied to characterize deep defect levels in 6H-SiC:N. Nitrogen is a donor atom in 6H-SiC which substitutes for carbon in three inequivalent sites (h, k1, k2). giving rise to n-type conduction. Deep defect levels attributable to transition metal impurities have also been identified in 6H-SiC:N. We have examined persistent photoconductance in this material by optical admittance spectroscopy.

The Optical Admittance Spectroscopy of the Vanadium Donor and Acceptor Levels in Semi-Insulating 4H-SiC and 6H-SiC

2006 ◽  
Vol 527-529 ◽  
pp. 647-650
Author(s):  
Won Woo Lee ◽  
Mary Ellen Zvanut
Keyword(s):  
Thermal Relaxation ◽  
Admittance Spectroscopy ◽  
Defect Level ◽  
Defect Complexes ◽  
Donor And Acceptor ◽  
Defect Levels

The purpose of this study is to determine the vanadium defect levels in semi-insulating 4H-SiC and 6H-SiC using optical admittance spectroscopy (OAS). OAS data show several distinct peaks for the vanadium-doped SI 4H-SiC and 6H-SiC. Comparison of the data for the two polytypes suggests that peaks at 0.67 ± 0.02 eV and 0.70 ± 0.02 eV in 6H substrates and 0.75 ± 0.02 eV in 4H substrates are related to V3+/4+ levels at the cubic sites. A peak at 0.87 ± 0.02 eV in the 6H sample is assigned to the same defect level at the hexagonal site and the associated transition in 4H was observed at 0.94 ± 0.02 eV in our spectra. The donor levels are thought to be related to peaks at 1.94 ± 0.05 eV and 1.87 ± 0.05 eV in 4H and 6H samples, respectively. The differences between the values obtained from the optical admittance measurements and those reported in the literature are attributed to thermal relaxation and/or contributions from defect complexes.

scholarly journals Investigation of Defect Levels in Mg-Doped GaN Schottky Structures by Thermal Admittance Spectroscopy

2001 ◽  
Vol 228 (2) ◽  
pp. 385-389
Author(s):  
N.D. Nguyen ◽  
M. Germain ◽  
M. Schmeits ◽  
B. Schineller ◽  
M. Heuken
Keyword(s):  
Admittance Spectroscopy ◽  
Defect Levels ◽  
Mg Doped

Characterization of Defects in N-Type 6H-SiC Single Crystals by Optical Admittance Spectroscopy

1993 ◽  
Vol 325 ◽  
Author(s):  
A.O. Evwaraye ◽  
S.R. Smith ◽  
W.C. Mitchel
Keyword(s):  
Single Crystals ◽  
Admittance Spectroscopy ◽  
Donor Atom ◽  
Deep Defect ◽  
Metal Impurities ◽  
Transition Metal Impurities ◽  
Defect Levels ◽  
First Time ◽  
Type Conduction

AbstractOptical admittance spectroscopy is a technique for measuring the conductance and capacitance of a junction under illumination as a function of the wavelength of the light and the frequency of the measuring AC signal. For the first time, this technique is applied to characterize deep defect levels in 6H-SiC:N. Nitrogen is a donor atom in 6H-SiC which substitutes for carbon in three inequivalent sites (h, kl, k2). giving rise to n-type conduction. Deep defect levels attributible to transition metal impurities have been identified in 6H-SiC:N by optical admittance spectroscopy.

Effect of C/B Sequential Implantation on the B Acceptors in 4H-SiC

2000 ◽  
Vol 640 ◽  
Author(s):  
Yoshitaka Nakano ◽  
Tetsu Kachi ◽  
Hiroshi Tadano ◽  
Rajesh Kumar Malhan
Keyword(s):  
Ionization Energy ◽  
Hole Concentration ◽  
Deep Levels ◽  
Admittance Spectroscopy ◽  
Deep Defect ◽  
Complex Defect ◽  
Rich Condition ◽  
Defect Levels ◽  
Expected Increase

ABSTRACTWe have systematically investigated the effect of C/B sequential implantation on the B-related acceptors and deep levels in 4H-SiC using thermal admittance spectroscopy. With increasing concentration of co-implanted C, the density of deep levels was found to start decreasing and to be completely suppressed for the C and B ratio of 1:1. Moreover, the density and ionization energy of B acceptors were seen to start increasing and lowering, respectively, with increasing C concentration. However, we found that excess C-content leads to the formation of a new complex defect. The C-V results also support the expected increase in the total hole concentration with increasing concentration of the co-implanted C-atoms, which is followed by a decrease in the concentration under C-rich condition. This is in reasonable agreements with the behavior of the B acceptors and deep defect levels. Therefore, the concentration of co-implanted C-atoms is considered to be very sensitive to the formation of the B acceptor levels.

Resistance switching properties in Pt/SrTiO3:Nb Schottky junctions studied by admittance spectroscopy

2010 ◽  
Vol 173 (1-3) ◽  
pp. 216-219 ◽  
Author(s):  
Jianyong Li ◽  
Naoki Ohashi ◽  
Hideyo Okushi ◽  
Tsubasa Nakagawa ◽  
Isao Sakaguchi ◽  
...  
Keyword(s):  
Resistance Switching ◽  
Admittance Spectroscopy ◽  
Schottky Junctions
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