Silane versus silicon tetrafluoride in the growth of microcrystalline silicon films by standard radio frequency glow discharge

2007 ◽  
Vol 515 (19) ◽  
pp. 7451-7454 ◽  
Author(s):  
Y. Djeridane ◽  
A. Abramov ◽  
P. Roca i Cabarrocas
Keyword(s):  
Glow Discharge ◽  
Radio Frequency ◽  
Silicon Films ◽  
Silicon Tetrafluoride ◽  
Microcrystalline Silicon ◽  
Radio Frequency Glow Discharge

Microcrystalline Silicon Films Deposited by Cathode‐Type RF Glow Discharge Technique

1995 ◽  
Vol 142 (5) ◽  
pp. 1663-1666 ◽  
Author(s):  
Ahalapitiya Hewage Jayatissa ◽  
Yoichiro Nakanishi ◽  
Yosinori Hatanaka
Keyword(s):  
Glow Discharge ◽  
Silicon Films ◽  
Microcrystalline Silicon ◽  
Rf Glow Discharge

Ion Kinetic Energy Determinations in Radio-Frequency Glow Discharge Mass Spectrometry

1995 ◽  
Vol 49 (7) ◽  
pp. 917-926 ◽  
Author(s):  
Paula R. Cable ◽  
R. Kenneth Marcus
Keyword(s):  
Kinetic Energy ◽  
Glow Discharge ◽  
Radio Frequency ◽  
Source Region ◽  
Potential Method ◽  
Operating Conditions ◽  
Atmospheric Plasma ◽  
Radio Frequency Glow Discharge ◽  
Ion Trajectory ◽  
Ion Kinetic Energy

Radio-frequency glow discharge (rf-GD) sources produce an abundance of both atoms and ions. For the mass spectrometric application of the glow discharge technique, knowledge of the ion kinetic energies is required to optimize extraction and focusing of ions from the source region into the analyzer. This paper details kinetic energies experimentally determined with the use of the “retarding potential” method. For this study, the analyzer quadrupole of a double-quadrupole mass spectrometer was positively biased to act as a repeller. Ion kinetic energies (IKEs) determined for a variety of discharge and analyzer operating conditions ranged from 12.5 eV to 25.0 eV for 63Cu+. Kinetic energy measurements were confirmed from ion trajectory simulations and follow closely the experimental values for identical analyzer conditions and initial IKEs. Results of this study indicate that the conditions under which ions are formed (plasma conditions) affect IKEs and energy spreads to a greater extent than analyzer parameter variations. Different from atmospheric plasma sources, IKEs for rf-GD species do not vary as a function of ion mass/identity. Evidence is also given in support of a slight mass biasing owing to the transmission properties of double-quadrupole analyzers. The findings detailed herein demonstrate the effects of rf modulation on both ion kinetic energy values and distributions.

scholarly journals A Comparative Evaluation of Contact Angle Changes on three Topical Surfactant Application and Exposure to Radio-Frequency Glow Discharge

2017 ◽  
Vol 10 (1) ◽  
pp. 381-388 ◽  
Author(s):  
K. M. Mathew ◽  
Saji. P ◽  
Raza Mohamed ◽  
P. Sesha. Reddy ◽  
Ashish R. Jain ◽  
...  
Keyword(s):  
Contact Angle ◽  
Glow Discharge ◽  
Radio Frequency ◽  
Comparative Evaluation ◽  
Radio Frequency Glow Discharge

Electrical and Optical Properties of Oxygenated Microcrystalline Silicon (mc-Si:O:H)

1992 ◽  
Vol 242 ◽  
Author(s):  
M. Faraji ◽  
Sunil Gokhale ◽  
S. M. Chaudhari ◽  
M. G. Takwale ◽  
S. V. Ghaisas
Keyword(s):  
Optical Properties ◽  
Glow Discharge ◽  
Silicon Surface ◽  
Volume Fraction ◽  
Crystalline Volume Fraction ◽  
Microcrystalline Silicon ◽  
Electrical And Optical Properties ◽  
Radio Frequency Glow Discharge ◽  
Absorption Studies ◽  
Discharge Method

ABSTRACTHydrogenated microcrystalline silicon with oxygen(mc-Si:O:H) is grown using radio frequency glow discharge method. Oxygen is introduced during growth by varying it's partial pressure in the growth chamber. The crystalline volume fraction ‘f’ and the crystallite size ‘δ’ are found to vary with the oxygen content. Results indicate that oxygen can etch the silicon surface when present in low amount while it forms a-SiO2-x with increasing contents. Optical absorption studies in the range of 2 to 3 eV suggest that the absorption coefficient ‘α’ lies in between the values of c-Si and a-Si:H.being closer to a-Si:H. The Hall mobility measurements for these samples indicate that for optimum oxygen contents the mobility as high as 35 cm2 V-1 sec-1 can be obtained. Results on I-V characteristics for p-i-n structure are presented.

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