scholarly journals Raman measurements and stress analysis in gallium ion-implanted gallium nitride epitaxial layers on sapphire

2006 ◽  
Vol 515 (4) ◽  
pp. 2798-2802
Author(s):  
S. Mal ◽  
A. Singha ◽  
S. Dhara ◽  
A. Roy
Keyword(s):  
Gallium Nitride ◽  
Stress Analysis ◽  
Epitaxial Layers ◽  
Ion Implanted

Raman spectroscopy study of the structure of gallium nitride epitaxial layers of different orientations

2016 ◽  
Vol 61 (3) ◽  
pp. 428-431
Author(s):  
A. A. Yugov ◽  
A. A. Donskov ◽  
T. G. Yugova ◽  
I. A. Belogorohov ◽  
Yu. N. Parhomenko
Keyword(s):  
Raman Spectroscopy ◽  
Gallium Nitride ◽  
Epitaxial Layers ◽  
Spectroscopy Study

Activation of silicon ion-implanted gallium nitride by furnace annealing

1999 ◽  
Vol 28 (3) ◽  
pp. 319-324 ◽  
Author(s):  
R. D. Dupuis ◽  
C. J. Eiting ◽  
P. A. Grudowski ◽  
H. Hsia ◽  
Z. Tang ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Furnace Annealing ◽  
Ion Implanted

Growth of epitaxial layers of gallium nitride on silicon carbide and corundum substrates

1971 ◽  
Vol 9 ◽  
pp. 158-164 ◽  
Author(s):  
D.K. Wickenden ◽  
K.R. Faulkner ◽  
R.W. Brander ◽  
B.J. Isherwood
Keyword(s):  
Silicon Carbide ◽  
Gallium Nitride ◽  
Epitaxial Layers

Growth of gallium nitride epitaxial layers and applications

2000 ◽  
Vol 1 (1) ◽  
pp. 35-49 ◽  
Author(s):  
Bernard Beaumont ◽  
Pierre Gibart ◽  
Nicolas Grandjean ◽  
Jean Massies
Keyword(s):  
Gallium Nitride ◽  
Epitaxial Layers

Stress analysis of transferable crack-free gallium nitride microrods grown on graphene/SiC substrate

2016 ◽  
Vol 185 ◽  
pp. 315-318 ◽  
Author(s):  
Lin Qi ◽  
Yu Xu ◽  
Zongyao Li ◽  
En Zhao ◽  
Song Yang ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Stress Analysis

Magnetic and Optical Properties of Manganese Ion Implanted Gallium Nitride and Their Effects on Silicon Ion Irradiation

2011 ◽  
Author(s):  
N. S. Pradhan ◽  
S. K. Dubey ◽  
A. D. Yadav ◽  
B. K. Panigrahi ◽  
K. G. M. Nair ◽  
...  
Keyword(s):  
Optical Properties ◽  
Gallium Nitride ◽  
Ion Irradiation ◽  
Manganese Ion ◽  
Ion Implanted

Effects of thermal annealing in ion-implanted Gallium Nitride

2007 ◽  
Author(s):  
F. Iucolano ◽  
F. Giannazzo ◽  
F. Roccaforte ◽  
V. Puglisi ◽  
M. G. Grimaldi ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Thermal Annealing ◽  
Ion Implanted

Bilayer Structures Obtained by Pulsed Laser Quenching of Binary Systems

1988 ◽  
Vol 100 ◽  
Author(s):  
P. Baeri ◽  
G. Foti ◽  
M. G. Grimaldi ◽  
F. Priolo ◽  
R. Reitano ◽  
...  
Keyword(s):  
Energy Density ◽  
Laser Pulse ◽  
Binary Systems ◽  
Pulsed Laser ◽  
Epitaxial Layers ◽  
Silicon Substrates ◽  
High Fluence ◽  
Laser Quenching ◽  
Ion Implanted

ABSTRACTNiSi and Ni2Si layers on silicon substrates as well as high fluence Si(As) ion implanted layers,have been rapidly melted by 30 ns Nd laser pulse irradiation.The energy density ranged between 0.4 and 1.2 J/cm2. Bilayer structures have been observed when the energy density has been chosen properly.Buried epitaxial layers together with an amorphous or a policrystalline layer on top,have been detected by RBS and TEM measurements.

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