On the dependence on bias voltage of the structural evolution of magnetron- sputtered nanocrystalline Cu films during thermal annealing

2005 ◽  
Vol 476 (2) ◽  
pp. 280-287 ◽  
Author(s):  
N. Schell ◽  
K. Pagh Andreasen ◽  
J. Bøttiger ◽  
J. Chevallier
Keyword(s):  
Thermal Annealing ◽  
Bias Voltage ◽  
Structural Evolution ◽  
Cu Films

Structural Evolution of Nb/NbC Multilayer Coatings

2007 ◽  
Vol 336-338 ◽  
pp. 879-882 ◽  
Author(s):  
I. Dahan ◽  
M.P. Dariel
Keyword(s):  
Thermal Annealing ◽  
Cross Sections ◽  
Structural Evolution ◽  
Multilayer Coatings ◽  
Subsequent Growth ◽  
Present Communication ◽  
Temperature Range ◽  
Nucleation Stage ◽  
Initial Nucleation ◽  
Interdiffusion Kinetics

The present communication is concerned with the interdiffusion kinetics and the interface breakdown that take place in the Nb/NbC multilayer system as the result of thermal annealing in the 400-800oC temperature range. Within this temperature range carbon is the diffusing species. Carbon diffuses from the carbide layer into the adjacent Nb layer, depleting its concentration within the carbide, causing the nucleation and subsequent growth of an intermediate Nb2C layer and decreasing the width of the original Nb layer. TEM examination of the cross-sections of the multilayer specimens provides data regarding the evolution of the microstructure and, in particular, regarding the initial nucleation stage of the newly formed Nb2C layer.

Structure Evolution in Plated Cu Films

2005 ◽  
Vol 863 ◽  
Author(s):  
D.P. Field ◽  
NJ Park ◽  
PR Besser ◽  
JE Sanchez
Keyword(s):  
Film Thickness ◽  
Grain Growth ◽  
Texture Evolution ◽  
Structural Evolution ◽  
Similar Process ◽  
Structure Evolution ◽  
Line Geometry ◽  
Strong Function ◽  
Cu Films ◽  
Line Widths

AbstractStructure evolution in plated Cu films is a function of sublayer stacking, film thickness, plating chemistry, plating parameters, and temperature. The present work examines grain growth and texture evolution in annealed plated Cu on a 25 nm thick Ta sublayer for films of 480 and 750 nm in thickness. These results are compared against those obtained from damascene Cu lines fabricated from a similar process, using a series of line widths. The results show that the initial structures of the plated films are similar, with slightly weaker (111) texture, a higher fraction of twin boundaries, and larger grains in the thicker films. The microstructure of the Cu within the trench constraints is a strong function of line geometry with the propensity for twin boundary development controlling structural evolution.

Thermal Annealing Effect on Active Layer Structure in All-Polymer Organic Solar Cells

2015 ◽  
Vol 792 ◽  
pp. 640-644 ◽  
Author(s):  
Denis V. Anokhin ◽  
Kirill L. Gerasimov ◽  
Anton Kiriy ◽  
Dimitri A. Ivanov
Keyword(s):  
Solar Cells ◽  
Thermal Annealing ◽  
Organic Solar Cells ◽  
Layer Structure ◽  
Polymer Solar Cells ◽  
Structural Evolution ◽  
X Ray Diffraction ◽  
Lamellar Phases ◽  
Structure Improvement ◽  
Oriented Parallel

The structural evolution of the components for the active layers of all-polymer solar cells was studied by DSC, X-ray diffraction and optical microscopy. It was found that polymer donor (PTQ1) and polymer acceptor (PNDIT2) form lamellar structures with layers oriented parallel and perpendicular to the substrate, respectively. All films reveal π-π stacking in the direction normal to the film. During thermal annealing the structure improvement occurs only for the donor component. In a PTQ1/ PNDIT2 blend, two components form individual lamellar phases with the texture similar to that of the pure polymers. Upon annealing, the structure of PNDIT2 was found to be disturbed whereas the structure of PTQ1 phase improves. The micro-phase separation occurring during annealing of the PTQ1/ PNDIT2 blend is accompanied by the formation of large spherulitic objects.

Real-time structural evolution at the interface of an organic transistor during thermal annealing

2014 ◽  
Vol 2 (17) ◽  
pp. 3390-3400 ◽  
Author(s):  
Timothy C. Anglin ◽  
Austin P. Lane ◽  
Aaron M. Massari
Keyword(s):  
Real Time ◽  
Thermal Annealing ◽  
Structural Evolution ◽  
Organic Transistor

Structural evolution in Fe ion implanted Si upon thermal annealing

2006 ◽  
Vol 250 (1-2) ◽  
pp. 300-302 ◽  
Author(s):  
Keisuke Omae ◽  
In-Tae Bae ◽  
Muneyuki Naito ◽  
Manabu Ishimaru ◽  
Yoshihiko Hirotsu ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Structural Evolution ◽  
Ion Implanted

Thermal stability and structural evolution of low-K Fluorinated amorphous carbon during thermal annealing

1998 ◽  
Vol 511 ◽  
Author(s):  
Hongning Yang ◽  
Douglas J. Tweet ◽  
Yanjun Ma ◽  
Tue Nguyen ◽  
David R. Evans ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Dielectric Constant ◽  
Thermal Annealing ◽  
Structural Evolution ◽  
Fluorine Concentration ◽  
Interlayer Dielectric ◽  
Profound Impact ◽  
Initial Stage ◽  
Stress Changes ◽  
Low K

ABSTRACTHighly crosslinked a-F:C films can undergo a significant change after thermal annealing, where the film expands by ∼3%, the density reduces by ∼10% and the internal stress changes from compressive to tensile. The loss of fluorine concentration and the reduction of CF. are accompanied by the transition of (C-C, sp3) to (C=C, sp2) groups. After annealing, the dielectric constant is reduced and the leakage current increases slightly. Most importantly, these changes occur only at the initial stage of annealing. After the initial annealing, the a-F:C film tends to be thermally stable and retains reasonably good electrical properties as a low-k interlayer dielectric. The profound impact of these results on Cu/a-F:C integration will be briefly discussed.

Thermal stability of sputtered copper films containing dilute insoluble tungsten: Thermal annealing study

2003 ◽  
Vol 18 (6) ◽  
pp. 1429-1434 ◽  
Author(s):  
C. H. Lin ◽  
J. P. Chu ◽  
T. Mahalingam ◽  
T. N. Lin ◽  
S. F. Wang
Keyword(s):  
Thermal Stability ◽  
Thermal Annealing ◽  
Stacking Fault ◽  
Stacking Fault Energy ◽  
Silicide Formation ◽  
Copper Silicide ◽  
Cu Films ◽  
Cu Film ◽  
Pure Cu ◽  
Thermal Stability Of

This paper describes studies on the thermal annealing behavior of Cu films with 2.3 at.% W deposited on Si substrates. The magnetron cosputtered Cu films with insoluble W were vacuum annealed at temperatures ranging from 200 to 800 °C. Twins were observed in focused ion beam and transmission electron microscopy images of as-deposited and 400 °C annealed pure Cu film, and these twins were attributed to the intrinsic low stacking fault energy. Twins in pure Cu film may provide an additional diffusion path during annealing for copper silicide formation. The beneficial effect of W on the thermal stability of Cu film was supported by the following observations: (i) x-ray diffraction studies show that Cu4Si was formed at 530 °C in Cu–W film, whereas pure Cu film exhibited Cu4Si growth at 400 °C; (ii) shallow diffusion profiles for Cu into Si in Cu–W film through secondary ion mass spectroscopy analyses, and the high activation energy needed for the copper silicide formation from the differential scanning calorimetry study; (iii) addition of W in Cu film increases the stacking fault energy and results in a low twin density.

Thermal annealing effects on La2Hf2O7:Eu3+ nanoparticles: a curious case study of structural evolution and site-specific photo- and radio-luminescence

2018 ◽  
Vol 5 (10) ◽  
pp. 2508-2521 ◽  
Author(s):  
Santosh K. Gupta ◽  
Jose P. Zuniga ◽  
Maya Abdou ◽  
Yuanbing Mao
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Thermal Annealing ◽  
Structural Evolution ◽  
Site Specific ◽  
Red Emission ◽  
Orange Emission ◽  
Annealing Effects

High temperature annealed La2Hf2O7:Eu3+ nanoparticles favor tunneling of Eu3+ to symmetric sites showing orange emission, whereas low temperature annealed samples favor red emission.

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