Ferroelectric thin films on silicon carbide for next-generation nonvolatile memory and sensor devices

2004 ◽  
Vol 469-470 ◽  
pp. 444-449 ◽  
Author(s):  
Mikael Östling ◽  
Sang-Mo Koo ◽  
Carl-Mikael Zetterling ◽  
Sergey Khartsev ◽  
Alex Grishin
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Nonvolatile Memory ◽  
Ferroelectric Thin Films ◽  
Next Generation ◽  
Sensor Devices

The physical and electrical characterizations of Cr-doped BiFeO3 ferroelectric thin films for nonvolatile memory applications

2015 ◽  
Vol 138 ◽  
pp. 86-90 ◽  
Author(s):  
Pi-Chun Juan ◽  
Jyh-Liang Wang ◽  
Tsang-Yen Hsieh ◽  
Cheng-Li Lin ◽  
Chia-Ming Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Nonvolatile Memory ◽  
Ferroelectric Thin Films ◽  
Memory Applications ◽  
Electrical Characterizations

Effective Direct Piezoelectric Constants in Epitaxial Ferroelectric Films as MEMS Sensors

2005 ◽  
Vol 881 ◽  
Author(s):  
Jun Ouyang ◽  
R. Ramesh ◽  
A. L. Roytburd
Keyword(s):  
Thin Films ◽  
Orientation Dependence ◽  
Ferroelectric Thin Films ◽  
Piezoelectric Constant ◽  
Mems Sensors ◽  
Ferroelectric Films ◽  
Si Substrates ◽  
Mems Sensor ◽  
Sensor Devices ◽  
Piezoelectric Constants

AbstractFollowing our previous work on the converse piezoelectric constant- in epitaxial ferroelectric films for MEMS actuator applications, the orientation dependence of the direct piezoelectric constants , and are generally formulated, which can help to predict and optimize the performance of piezoelectric MEMS sensor devices based on ferroelectric thin films. Numerical results are obtained and discussed for Pb(ZrxTi1-x)O3 thin films grow on Si substrates with various compositions and structures.

scholarly journals Flexible Inorganic Ferroelectric Thin Films for Nonvolatile Memory Devices

2017 ◽  
Vol 27 (21) ◽  
pp. 1700461 ◽  
Author(s):  
Hyeonggeun Yu ◽  
Ching-Chang Chung ◽  
Nate Shewmon ◽  
Szuheng Ho ◽  
Joshua H. Carpenter ◽  
...  
Keyword(s):  
Thin Films ◽  
Nonvolatile Memory ◽  
Ferroelectric Thin Films ◽  
Memory Devices ◽  
Nonvolatile Memory Devices

scholarly journals Design of flexible inorganic BiFe0.93Mn0.07O3 ferroelectric thin films for nonvolatile memory

2020 ◽  
Vol 6 (3) ◽  
pp. 600-606 ◽  
Author(s):  
Bingbing Yang ◽  
Chenhui Li ◽  
Miao Liu ◽  
Renhuai Wei ◽  
Xianwu Tang ◽  
...  
Keyword(s):  
Thin Films ◽  
Nonvolatile Memory ◽  
Ferroelectric Thin Films

Reliability of Ba(Zr0.1Ti0.9)O3 Ferroelectric Thin Films under Various Frequencies for Nonvolatile Memory Application

2007 ◽  
Vol 336-338 ◽  
pp. 73-75 ◽  
Author(s):  
Kai Huang Chen ◽  
Chien Chuan Cheng ◽  
Ying Chung Chen ◽  
Ting Chang Chang
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Magnetron Sputtering ◽  
Coercive Field ◽  
Nonvolatile Memory ◽  
Rf Magnetron Sputtering ◽  
Ferroelectric Thin Films ◽  
Si Substrate ◽  
Electrical Field ◽  
Saturation Polarization

In this study, ferroelectric thin films of Ba(Zr0.1Ti0.9)O3 were successfully deposited on Pt/Ti/SiO2/Si substrate under the optimal rf magnetron sputtering parameters, and their electrical and ferroelectric characteristics were investigated. The MFMIS structure of Al/Ba(Zr0.1Ti0.9)O3/ Pt/Ti/SiO2/Si was proposed in order to be applied as NDRO FRAM applications. From the experimental results obtained, the dielectric constant and the leakage current density of BZT films were about 200 and 1×10-9A/cm2, respectively, under the electrical field of 1 MV/cm. Besides, the saturation polarization and coercive field of Ba(Zr0.1Ti0.9)O3 films were found to be 4 μC/cm2 and 25 kV/cm, respectively, as the frequency of 103 Hz was applied. The variations of saturation polarization and coercive filed of films under various frequencies ranging form 102 to 106 Hz were also discussed.

Superior and Stable Ferroelectric Properties of Hafnium-Zirconium-Oxide Thin Films Deposited via Atomic Layer Deposition using Cyclopentadienyl-Based Precursors without Annealing

Nanoscale ◽  
2021 ◽  
Author(s):  
Hyo-Bae Kim ◽  
Moonyoung Jung ◽  
Youkyoung Oh ◽  
Seung Won Lee ◽  
Dongseok Suh ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Zirconium Oxide ◽  
Ferroelectric Properties ◽  
Atomic Layer ◽  
Ferroelectric Thin Films ◽  
Next Generation ◽  
Oxide Thin Films ◽  
Layer Deposition

HfO2-based ferroelectric thin films deposited via atomic layer deposition have been extensively studied as promising candidates for next-generation ferroelectric devices. The conversion of an amorphous Hf1-xZrxO2 film to the ferroelectric...

SrBi2Nb2O9 ferroelectric thin films

1998 ◽  
Vol 08 (PR9) ◽  
pp. Pr9-225-Pr9-228
Author(s):  
J. H. Yi ◽  
P. Thomas ◽  
M. Manier ◽  
J. P. Mercurio ◽  
I. Jauberteau ◽  
...  
Keyword(s):  
Thin Films ◽  
Ferroelectric Thin Films
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