Early stage heteroepitaxial growth of SrRuO3 films on SrTiO3 (001) depending on the growth temperature during pulsed laser deposition

2005 ◽  
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pp. 44-49 ◽  
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Han Cheol Choe ◽  
Tae Soo Kang ◽  
Jung Ho Je ◽  
Jong Ha Moon ◽  
Byung-Teak Lee ◽  
...  
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Q. F. Lu ◽  
Z. H. Wang ◽  
...  

2000 ◽  
Vol 12 (10) ◽  
pp. 2858-2868 ◽  
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J. Wolfman ◽  
W. Prellier ◽  
M. Hervieu ◽  
Ch. Simon ◽  
...  

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X.S. Wu ◽  
F.M. Zhang ◽  
C.L. Mak

2013 ◽  
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Yang Zhou ◽  
Hongfang Zheng ◽  
Lei Zhang ◽  
Yingcai Peng ◽  
Qingxun Zhao ◽  
...  

1995 ◽  
Vol 401 ◽  
Author(s):  
J. S. Yeo ◽  
K. E. Youden ◽  
T. F. Huang ◽  
L. Hesselink ◽  
J. S. Harris

AbstractEpitaxial SBN:61 films have been grown on SBN:75 and MgO substrates by pulsed laser deposition. The optical loss due to absorption is greatly reduced by increasing the oxygen pressure to 1 mbar during the cooling process. In homoepitaxy, X-ray phi scans on the (221) plane of the SBN:61 films indicate that the in-plane grains are rotated 0° or ±28° with respect to single crystalline SBN:75 substrates. Cross-section and plane view high resolution TEM reveals this crystalline relations and microstructure of SBN thin films. Pr doped SBN:61 thin films show sharp transition band at 495 nm and 607 nm in room temperature photoluminescence measurement.


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