The crystallographic change in sub-surface layer of the silicon single crystal polished by chemical mechanical polishing

2007 ◽  
Vol 40 (2) ◽  
pp. 285-289 ◽  
Author(s):  
J. Xu ◽  
J.B. Luo ◽  
L.L. Wang ◽  
X.C. Lu
Keyword(s):  
Surface Layer ◽  
Single Crystal ◽  
Chemical Mechanical Polishing ◽  
Silicon Single Crystal ◽  
Mechanical Polishing

A novel slurry for chemical mechanical polishing of single crystal diamond

2021 ◽  
pp. 150431
Author(s):  
Longxing Liao ◽  
Zhenyu Zhang ◽  
Fanning Meng ◽  
Dongdong Liu ◽  
Bin Wu ◽  
...  
Keyword(s):  
Single Crystal ◽  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Single Crystal Diamond

Transient Electrochemical Measurements During Copper Chemical Mechanical Polishing

2003 ◽  
Vol 767 ◽  
Author(s):  
Seung-Mahn Lee ◽  
Wonseop Choi ◽  
Valentin Craciun ◽  
Rajiv K. Singh
Keyword(s):  
Surface Layer ◽  
Reaction Kinetics ◽  
Chemical Mechanical Polishing ◽  
Copper Surface ◽  
Mechanical Polishing ◽  
Electrochemical Measurements ◽  
Chemically Modified ◽  
Modified Surface ◽  
Selection Of ◽  
Modified Surface Layer

AbstractChronoamperometry was used to investigate the reaction/passivation kinetics and thickness of the chemically modified surface layer on the copper during chemical mechanical polishing (CMP). The result showed that the reaction/passivation kinetics and the thickness of the chemically modified surface layer are strongly dependent on the chemistry of CMP slurry in the chemical aspect of CMP and play critical keys in the selection of the chemistry and its concentration. BTA and H2O2 enhanced the passivation kinetics, resulting in thinner layer on the copper surface. In addition, the reaction kinetics increased as pH decreased.

Some Mechanical Models of Chemical-Mechanical Polishing Processes

2012 ◽  
Vol 528 ◽  
pp. 33-44 ◽  
Author(s):  
Robert V. Goldstein ◽  
N.M. Osipenko
Keyword(s):  
Surface Layer ◽  
Chemical Mechanical Polishing ◽  
Mechanical Load ◽  
Mechanical Polishing ◽  
Polished Surface ◽  
Actual Problem ◽  
Current State ◽  
Mechanical Models ◽  
Analytical Review ◽  
Cmp Modeling

Chemical-mechanical polishing (CMP)-a perspective technology in fabrication of micro-and nanoelectronics elements, devices and systems. The development of models of CMP processes remains to be the actual problem. It is pointed out that known CMP models do not account for the features of chemical and mechanical mechanisms of interaction of active fluid and particles with a polished surface as well as an interaction of a viscoelastic pad with the surface. A description of the elementary acts of such interaction are absent in the available models. On the base of the analytical review of the current state of the theory and problems of (CMP) modeling some approaches were suggested to the problem accounting for the complex of the phenomena of different scales determining the polishing rate such as diffusion of slurry into the surface layer and restriction of time of chemical treatment of the surface by a rough pad being under the action of a mechanical load. A model of the CMP process was developed. Within the framework of this model a dependence of the polishing rate on the loading parameters was derived. The dependence generalizes the empirical Preston law.

scholarly journals Integration Technology for Wafer-Level LiNbO3 Single-Crystal Thin Film on Silicon by Polyimide Adhesive Bonding and Chemical Mechanical Polishing

Nanomaterials ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 2554
Author(s):  
Wenping Geng ◽  
Xiangyu Yang ◽  
Gang Xue ◽  
Wenhao Xu ◽  
Kaixi Bi ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Chemical Mechanical Polishing ◽  
Adhesive Bonding ◽  
Mechanical Polishing ◽  
Bonding Interface ◽  
Infrared Analysis ◽  
Mems Devices ◽  
Wafer Level ◽  
Integration Technology

An integration technology for wafer-level LiNbO3 single-crystal thin film on Si has been achieved. The optimized spin-coating speed of PI (polyimide) adhesive is 3500 rad/min. According to Fourier infrared analysis of the chemical state of the film baked under different conditions, a high-quality PI film that can be used for wafer-level bonding is obtained. A high bonding strength of 11.38 MPa is obtained by a tensile machine. The bonding interface is uniform, completed and non-porous. After the PI adhesive bonding process, the LiNbO3 single-crystal was lapped by chemical mechanical polishing. The thickness of the 100 mm diameter LiNbO3 can be decreased from 500 to 10 μm without generating serious cracks. A defect-free and tight bonding interface was confirmed by scanning electron microscopy. X-ray diffraction results show that the prepared LiNbO3 single-crystal thin film has a highly crystalline quality. Heterogeneous integration of LiNbO3 single-crystal thin film on Si is of great significance to the fabrication of MEMS devices for in-situ measurement of space-sensing signals.

Oxidant for Chemical Mechanical Polishing of Single Crystal Diamond

2014 ◽  
Vol 1027 ◽  
pp. 80-83 ◽  
Author(s):  
Zhuo Ying Shi ◽  
Zhu Ji Jin ◽  
Hong Ming Xue ◽  
Shuang Ji Shi
Keyword(s):  
Single Crystal ◽  
Chemical Mechanical Polishing ◽  
Processing Method ◽  
Mechanical Polishing ◽  
Diamond Surface ◽  
High Tech ◽  
Fenton Reagent ◽  
High Chemical ◽  
Chemical Inertness ◽  
Single Crystal Diamond

Single crystal diamond is widely used in high-tech fields for its remarkable performance on mechanics, calorifics, optics, acoustics, etc. High-quality diamond surface with small roughness and low scathe are required in these applications. However, the extreme hardness and high chemical inertness of diamond result in severe processing difficulties. Chemical mechanical polishing (CMP) is a promising processing method which can obtain super-smooth and low-damage diamond surface. Oxidant is a key issue for CMP of single crystal diamond. In this study, five different oxidants were used to polish diamond samples. The results indicated that Fenton reagent was an appropriate CMP oxidant and a super-smooth diamond surface of Ra 2.4 nm was achieved by using Fenton reagent in CMP.

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