Recent developments in lanthanide-to-quantum dot FRET using time-gated fluorescence detection and photon upconversion

2016 ◽  
Vol 84 ◽  
pp. 60-71 ◽  
Author(s):  
Marcelina Cardoso Dos Santos ◽  
Niko Hildebrandt
Keyword(s):  
Quantum Dot ◽  
Fluorescence Detection ◽  
Recent Developments

Fabrication of an “ion-imprinting” dual-emission quantum dot nanohybrid for selective fluorescence turn-on and ratiometric detection of cadmium ions

The Analyst ◽  
2016 ◽  
Vol 141 (20) ◽  
pp. 5886-5892 ◽  
Author(s):  
Jing Wang ◽  
Chenxing Jiang ◽  
Xiaoqi Wang ◽  
Ligeng Wang ◽  
Aimin Chen ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Fluorescence Detection ◽  
Ratiometric Fluorescence ◽  
Dual Emission ◽  
Cadmium Ions ◽  
Turn On ◽  
Ratiometric Detection ◽  
Ion Imprinting ◽  
Fluorescence Turn On

A new CdTe@SiO2@CdSe nanohybrid was demonstrated for the ratiometric fluorescence detection of Cd2+via the turn-on model and “ion-imprinting” technique.

scholarly journals Quantum Dot-sensitized Solar Cells: A Review

2018 ◽  
Vol 7 (1) ◽  
pp. 42-54 ◽  
Author(s):  
Pooja Bhambhani
Keyword(s):  
Solar Cell ◽  
Quantum Dot ◽  
Counter Electrode ◽  
Low Cost ◽  
Power Conversion ◽  
Counter Electrodes ◽  
Analogous Structure ◽  
Recent Developments ◽  
Working Principle ◽  
Sensitized Solar Cells

Quantum dot-sensitized solar cell (QDSSC) has an analogous structure and working principle to the dye sensitizer solar cell (DSSC). It has drawn great attention due to its unique features, like multiple exciton generation (MEG), simple fabrication and low cost. The power conversion efficiency (PCE) of QDSSC is lower than that of DSSC. To increase the PCE of QDSSC, it is required to develop new types of working electrodes, sensitizers, counter electrodes and electrolytes. This review highlights recent developments in QDSSCs and their key components, including the photoanode, sensitizer, electrolyte and counter electrode.

scholarly journals Recent developments of quantum dot based micro-LED based on non-radiative energy transfer mechanism

2021 ◽  
Vol 4 (4) ◽  
pp. 21002201-21002215
Author(s):  
Xiaotong Fan ◽  
◽  
Tingzhu Wu ◽  
Bin Liu ◽  
Rong Zhang ◽  
...  
Keyword(s):  
Energy Transfer ◽  
Quantum Dot ◽  
Transfer Mechanism ◽  
Radiative Energy ◽  
Energy Transfer Mechanism ◽  
Radiative Energy Transfer ◽  
Recent Developments

scholarly journals O-Band and C/L-Band III-V Quantum Dot Lasers Monolithically Grown on Ge and Si Substrate

2019 ◽  
Vol 9 (3) ◽  
pp. 385 ◽  
Author(s):  
Qi Feng ◽  
Wenqi Wei ◽  
Bin Zhang ◽  
Hailing Wang ◽  
Jianhuan Wang ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Epitaxial Growth ◽  
Low Cost ◽  
Manufacturing Cost ◽  
Heteroepitaxial Growth ◽  
Thermal Cracks ◽  
Recent Developments ◽  
L Band ◽  
On Chip ◽  
Laser Devices

Direct epitaxial growth of III-V heterostructure on CMOS-compatible silicon wafer offers substantial manufacturing cost and scalability advantages. Quantum dot (QD) devices are less sensitive to defect and temperature, which makes epitaxially grown III-V QD lasers on Si one of the most promising technologies for achieving low-cost, scalable integration with silicon photonics. The major challenges are that heteroepitaxial growth of III-V materials on Si normally encounters high densities of mismatch dislocations, antiphase boundaries and thermal cracks, which limit the device performance and lifetime. This paper reviews some of the recent developments on hybrid InAs/GaAs QD growth on Ge substrates and highly uniform (111)-faceted hollow Si (001) substrates by molecular beam epitaxy (MBE). By implementing step-graded epitaxial growth techniques, the emission wavelength can be tuned into either an O band or C/L band. Furthermore, microcavity QD laser devices are fabricated and characterized. The epitaxially grown III-V/IV hybrid platform paves the way to provide a promising approach for future on-chip silicon photonic integration.

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