Buffer flush and address mapping scheme for flash memory solid-state disk

2010 ◽  
Vol 56 (4-6) ◽  
pp. 208-220 ◽  
Author(s):  
Hyunchul Park ◽  
Dongkun Shin
Keyword(s):  
Solid State ◽  
Flash Memory ◽  
Address Mapping ◽  
Solid State Disk ◽  
Mapping Scheme

scholarly journals IBU: An In-block Update Address Mapping Scheme for Solid-state Drives

IEEE Access ◽  
2021 ◽  
pp. 1-1
Author(s):  
Reza Gholami Taghizadeh ◽  
Mohammadreza Binesh Marvasti ◽  
Seyyed Amir Asghari ◽  
Ramin Gholami Taghizadeh ◽  
Morteza Nabavi ◽  
...  
Keyword(s):  
Solid State ◽  
Solid State Drives ◽  
Address Mapping ◽  
Mapping Scheme

A hybrid flash translation layer design for SLC–MLC flash memory based multibank solid state disk

2011 ◽  
Vol 35 (1) ◽  
pp. 48-59 ◽  
Author(s):  
Jung-Wook Park ◽  
Seung-Ho Park ◽  
Charles C. Weems ◽  
Shin-Dug Kim
Keyword(s):  
Solid State ◽  
Flash Memory ◽  
Solid State Disk ◽  
Flash Translation Layer

Performance and reliability concern scheme for efficient garbage collection and wear leveling on flash memory-based solid state disk

2016 ◽  
Vol 23 (7) ◽  
pp. 2521-2535 ◽  
Author(s):  
Ahmed Izzat Alsalibi ◽  
Putra Sumari ◽  
Saleh A. Alomari ◽  
Mohammed Azmi Al-Betar
Keyword(s):  
Solid State ◽  
Flash Memory ◽  
Garbage Collection ◽  
Wear Leveling ◽  
Solid State Disk

WLVT: A Static Wear-Leveling Algorithm with Variable Threshold

2013 ◽  
Vol 756-759 ◽  
pp. 3131-3135
Author(s):  
Yuan Hua Yang ◽  
Xian Bin Xu ◽  
Shui Bing He ◽  
Fang Zhen ◽  
Yu Ping Zhang
Keyword(s):  
Solid State ◽  
Flash Memory ◽  
Storage System ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Wear Leveling ◽  
Variable Threshold ◽  
Solid State Disk ◽  
The Poor ◽  
Traditional Algorithm

NAND flash memory has been successfully employed in storage system due to its advantages such as performance, resistance, and capacity. NAND flash memory based solid state disk (SSD) has started to replace disk in numerous environments. However, the poor endurance offered by these SSDs continues to be their key shortcoming. To improve SSD endurance, we propose a static wear-leveling algorithm with variable threshold (WLVT). In contrast with traditional algorithm with fixed threshold, WLVT adjusts the value of threshold, so that each block can simultaneously reach the erasure times that the manufacturer gives when life of SSD is over. Therefore, available erasure time of each block will be fully utilized when SSD fails. Experimental results show that the endurance of the SSD is significantly improved.

Hydra: A Block-Mapped Parallel Flash Memory Solid-State Disk Architecture

2010 ◽  
Vol 59 (7) ◽  
pp. 905-921 ◽  
Author(s):  
Yoon Jae Seong ◽  
Eyee Hyun Nam ◽  
Jin Hyuk Yoon ◽  
Hongseok Kim ◽  
Jin-yong Choi ◽  
...  
Keyword(s):  
Solid State ◽  
Flash Memory ◽  
Solid State Disk

Lifetime-Aware Capacity Dynamic Adjusting for Solid State Disk

2014 ◽  
Vol 513-517 ◽  
pp. 3630-3633
Author(s):  
Kai Bu ◽  
Hai Jun Liu ◽  
Hui Xu ◽  
Zhao Lin Sun
Keyword(s):  
Solid State ◽  
Flash Memory ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Solid State Disk

In this paper, we analyzed the endurance of Nand Flash memory and then proposed a level adjusting scheme to use the MLC Flash dynamically to storage different amount of data levels through the entire lifetime. The result shows that the MLC SSD adopting this method could be totally written 4.8X more data than conventional MLC SSD and 16.5% more than SLC SSD.

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