Temporal and thermal properties of optically induced instabilities in P3HT field-effect transistors

Lorenz A. Kehrer; Stefan Winter; Rene Fischer; Christian Melzer; Heinz von Seggern

doi:10.1016/j.synthmet.2011.08.007

Temporal and thermal properties of optically induced instabilities in P3HT field-effect transistors

Synthetic Metals ◽

10.1016/j.synthmet.2011.08.007 ◽

2012 ◽

Vol 161 (23-24) ◽

pp. 2558-2561 ◽

Cited By ~ 15

Author(s):

Lorenz A. Kehrer ◽

Stefan Winter ◽

Rene Fischer ◽

Christian Melzer ◽

Heinz von Seggern

Keyword(s):

Thermal Properties ◽

Field Effect ◽

Field Effect Transistors ◽

Optically Induced

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Control of single-wall-nanotube field-effect transistors via indirect long-range optically induced processes

Applied Physics Letters ◽

10.1063/1.2209712 ◽

2006 ◽

Vol 88 (24) ◽

pp. 243507 ◽

Cited By ~ 6

Author(s):

K. S. Narayan ◽

Manohar Rao ◽

R. Zhang ◽

P. Maniar

Keyword(s):

Long Range ◽

Field Effect ◽

Field Effect Transistors ◽

Optically Induced

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Gate-Voltage Control of Optically- Induced Charges and Memory Effects in Polymer Field-Effect Transistors

Advanced Materials ◽

10.1002/adma.200400084 ◽

2004 ◽

Vol 16 (23-24) ◽

pp. 2151-2155 ◽

Cited By ~ 107

Author(s):

S. Dutta ◽

K. S. Narayan

Keyword(s):

Gate Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Voltage Control ◽

Memory Effects ◽

Optically Induced

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Optical and thermal properties of graphene field-effect transistors

physica status solidi (b) ◽

10.1002/pssb.201000173 ◽

2010 ◽

Vol 247 (11-12) ◽

pp. 2895-2903 ◽

Cited By ~ 5

Author(s):

Marcus Freitag

Keyword(s):

Thermal Properties ◽

Field Effect ◽

Field Effect Transistors

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APPLICATIONS OF a-Si FIELD EFFECT TRANSISTORS IN LIQUID CRYSTAL DISPLAYS AND IN INTEGRATED LOGIC CIRCUITS

Le Journal de Physique Colloques ◽

10.1051/jphyscol:1981490 ◽

1981 ◽

Vol 42 (C4) ◽

pp. C4-423-C4-432 ◽

Cited By ~ 2

Author(s):

P. G. Le Comber ◽

A. J. Snell ◽

K. D. Mackenzie ◽

W. E. Spear

Keyword(s):

Liquid Crystal ◽

Field Effect ◽

Field Effect Transistors ◽

Liquid Crystal Displays ◽

Logic Circuits ◽

Integrated Logic

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Construction of two-dimensional regression models of current-voltage characteristics of the output current of field-effect transistors using the information system PLExp

Izmeritel`naya Tekhnika ◽

10.32446/0368-1025it.2019-11-49-55 ◽

2019 ◽

pp. 49-55

Author(s):

N.Y. Baturina ◽

I.V. Kalienko

Keyword(s):

Information System ◽

Regression Models ◽

Field Effect ◽

Field Effect Transistors ◽

Two Dimensional ◽

Output Current ◽

Current Voltage ◽

Current Voltage Characteristics

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Ambipolar Characteristics of Solution Processed Bilayer Field Effect Transistors based on Poly(3-hexylthiophene) and fullerene derivatives

10.1557/proc-1115-h05-43 ◽

2008 ◽

Author(s):

Takeomi Morita ◽

Syuichi Nagamatsu ◽

Vipul Singh ◽

Shinya Oku ◽

Wataru Takashima ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Solution Processed ◽

Fullerene Derivatives

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Air-Stable n-Channel Organic Single-Crystal Field-Effect Transistors

10.1557/proc-1115-h05-10 ◽

2008 ◽

Author(s):

Takafumi Uemura ◽

Masakazu Yamagishi ◽

Yukihiro Tominari ◽

Jun Takeya

Keyword(s):

Single Crystal ◽

Crystal Field ◽

Field Effect ◽

Field Effect Transistors ◽

Crystal Field Effect ◽

Organic Single Crystal

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Organic Three-dimensional Field-effect Transistors

10.1557/proc-1115-h03-03 ◽

2008 ◽

Author(s):

M. Uno ◽

I. Doi ◽

K. Takimiya ◽

Jun Takeya

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Three Dimensional

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Growth Mechanism of Pentacene on HfON Gate Insulator and Its Effect on Electrical Properties of Organic Field-Effect Transistors

IEICE Transactions on Electronics ◽

10.1587/transele.e95.c.885 ◽

2012 ◽

Vol E95.C (5) ◽

pp. 885-890 ◽

Cited By ~ 3

Author(s):

Min LIAO ◽

Hiroshi ISHIWARA ◽

Shun-ichiro OHMI

Keyword(s):

Electrical Properties ◽

Growth Mechanism ◽

Field Effect ◽

Field Effect Transistors ◽

Gate Insulator ◽

Organic Field Effect Transistors

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A Calculation Model for Submicron Field-Effect Transistors Based on GaAs

Telecommunications and Radio Engineering ◽

10.1615/telecomradeng.v58.i7-8.90 ◽

2002 ◽

Vol 58 (7-8) ◽

pp. 9

Author(s):

S. A. Zuev ◽

V. V. Starostenko ◽

A. A. Shadrin

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Calculation Model

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