Surface morphology of Mn+ implanted Ge(100): A systematic investigation as a function of the implantation substrate temperature

2007 ◽  
Vol 601 (13) ◽  
pp. 2623-2627 ◽  
Author(s):  
L. Ottaviano ◽  
A. Verna ◽  
V. Grossi ◽  
P. Parisse ◽  
S. Piperno ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Substrate Temperature ◽  
Systematic Investigation

Grain Enlargment in Polysilicon on Insulating Substrates Induced by Q-Switched Nd:Yag Laser Irradiation

1981 ◽  
Vol 4 ◽  
Author(s):  
R. J. Falster ◽  
G. E. J. Eggermont ◽  
J. F. Gibbons
Keyword(s):  
Surface Morphology ◽  
Substrate Temperature ◽  
Laser Irradiation ◽  
Laser Power ◽  
Threshold Value ◽  
Oxide Thickness ◽  
Systematic Investigation ◽  
Incident Laser ◽  
Polysilicon Film ◽  
Incident Laser Power

ABSTRACTA systematic investigation of the formation of large grained rings in polysilicon by Q-switched laser irradiation has been performed. Parameters varied in this study were polysilicon thickness, substrate temperature and underlying oxide thickness. Increasing ring widths were obtained for increasing substrate temperature, polysilicon film thickness and underlying oxide thickness. The width of these rings was found to be independent of incident laser power above a certain threshold value. Surface morphology and the occurrence of cracking and ablation in these films as a function of these parameters was also investigated.

AFM Study of Surface Morphology of Aluminum Nitride Thin Films

1995 ◽  
Vol 388 ◽  
Author(s):  
Yoshihisa Watanabe ◽  
Yoshikazu Nakamura ◽  
Shigekazu Hirayama ◽  
Yuusaku Naota
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Substrate Temperature ◽  
Single Crystal ◽  
Room Temperature ◽  
Ion Beam ◽  
Soda Lime ◽  
Silicon Single Crystal ◽  
Soda Lime Glass ◽  
Average Roughness

AbstractAluminum nitride (AlN) thin films have been synthesized by ion-beam assisted deposition method. Film deposition has been performed on the substrates of silicon single crystal, soda-lime glass and alumin A. the influence of the substrate roughness on the film roughness is studied. the substrate temperature has been kept at room temperature and 473K and the kinetic energy of the incident nitrogen ion beam and the deposition rate have been fixed to 0.5 keV and 0.07 nm/s, respectively. the microstructure of the synthesized films has been examined by X-ray diffraction (XRD) and the surface morphology has been observed by atomic force microscopy(AFM). IN the XRD patterns of films synthesized at both room temperature and 473K, the diffraction line indicating the alN (10*0) can be discerned and the broad peak composed of two lines indicating the a1N (00*2) and a1N (10*1) planes is also observed. aFM observations for 100 nm films reveal that (1) the surface of the films synthesized on the silicon single crystal and soda-lime glass substrates is uniform and smooth on the nanometer scale, (2) the average roughness of the films synthesized on the alumina substrate is similar to that of the substrate, suggesting the evaluation of the average roughness of the film itself is difficult in the case of the rough substrate, and (3) the average roughness increases with increasing the substrate temperature.

The Analysis of the Film Morphology

2013 ◽  
Vol 734-737 ◽  
pp. 2377-2381
Author(s):  
Bo Xiong Zhao ◽  
Yu Jian Du ◽  
Xin Sui
Keyword(s):  
Thin Film ◽  
Surface Morphology ◽  
Substrate Temperature ◽  
Film Growth ◽  
Ybco Film ◽  
Thin Film Growth ◽  
Schematic Diagram ◽  
Film Morphology ◽  
Crystal Film ◽  
New Type

Thin film technologies are widely used in modern scientific and technological fields .The theory of thin film growth is guidance for developing a new-type materials and improving the properties of custom thin film materials .In this article , the studies of thin film growth are carried out. The studies are made a simulation of surface growth of the GaxIn1-xAs1-ySbyand YBCO film, Schematic diagram of the surface morphology under different substrate temperature of thin film growth are obtained and analyzed .Many significant results are found. First of all ,the background of the topic ,research purpose and significance are described in this article .Then the studies of thin film growth are carried out ，to analyse the effects of different elements on the surface of the crystal film.

Electrical Properties of Pulsed Laser Deposited ZnO Thin Films

2009 ◽  
Vol 67 ◽  
pp. 121-125
Author(s):  
Chattopadhyay Sourav ◽  
Kumar Nath Tapan
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Substrate Temperature ◽  
Hall Mobility ◽  
Pulsed Laser ◽  
Deposition Process ◽  
Zno Thin Films ◽  
Zno Films ◽  
Visible Absorption ◽  
Substrate Temperatures

Epitaxial Single-crystal ZnO thin films have been grown on c-plane (0001) sapphire by Pulsed Laser Deposition process at different substrate temperatures (300 – 800 °C) with 10-1 mbar oxygen pressure. The thicknesses of the films have been varied by varying number of pulses with a repetition rate of 10 pulse/sec. It is found that the sheet resistivity of ZnO thin films grown on c-plane sapphires are in the order of 10-2 Ω-cm and it increases with increasing substrate temperatures and film thickness. The carrier concentrations and Hall mobility are found to be in the order of 1017 cm-3 and ~195 cm2/V-s, respectively. The Hall mobility slightly decreases with increase of substrate temperature and thickness of the films. It is also found that the ZnO films are structurally uniform and well oriented with perfect wurtzite structure with c/a ratio 5.1. We have also deposited non-epitaxial ZnO films on (100) p-Silicon substrates at the same conditions. From HR FE-SEM micrographs, surface morphology of ZnO films grown at lower substrate temperature are found to be uniform compared to the films grown at higher temperatures showing non-uniformity and misoriented wurtzite structures. However, the surface morphology of ZnO flims grown epitaxially on (0001) sapphire are found to be more uniform and it does not change much with growth temperature. The resistivity of the films grown on p-Silicon at higher temperatures is in the order of 103 Ω-cm whereas films grown at lower substrate temperatures show comparatively lower resistivities (~ 102 Ω-cm). From the recorded UV-Visible absorption spectrum the band gap of the film has been estimated to be 3.38 eV.

Substrate temperature dependent surface morphology of nanostructured zinc antimonides thin films

2015 ◽  
Author(s):  
Athif Mohd Faudzi Ahmad ◽  
Mohd Azizir-Rahim Mukri ◽  
Abdul Khamim Ismail ◽  
Muhammad Firdaus Omar
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Substrate Temperature ◽  
Temperature Dependent

SURFACE MORPHOLOGY AND PHOTOLUMINESCENCE CHARACTERISTICS OF Sm-DOPED YVO4 THIN FILMS

2007 ◽  
Vol 14 (05) ◽  
pp. 873-878 ◽  
Author(s):  
HYUN KYOUNG YANG ◽  
JONG WON CHUNG ◽  
BYUNG KEE MOON ◽  
BYUNG CHUN CHOI ◽  
JUNG HYUN JUNG ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Substrate Temperature ◽  
Photoluminescence Intensity ◽  
Photoluminescence Spectra ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Zircon Structure ◽  
Substrate Temperatures

Surface morphology and crystallinity of YVO 4: Sm 3+ thin films have an influence on the photoluminescence characteristics. The YVO 4: Sm 3+ films have been deposited on Al 2 O 3 (0001) substrates using pulsed laser deposition method. The films were grown at the various substrate temperatures changing from 500 to 700°C. The crystallinity and surface morphology of the films were investigated using X-ray diffraction (XRD) and atomic force microscopy (AFM), respectively. The results of XRD showed that YVO 4: Sm 3+ films had a zircon structure and AFM study revealed that the films consisted of homogeneous grains ranging from 100 to 400 nm depending on the deposition conditions. The photoluminescence spectra were measured at room temperature and the emitted radiation was dominated by the red emission peak at 620 nm radiated from the transition of 5 D 0-7 F 2. The crystallinity, surface morphology, and photoluminescence spectra of thin-film phosphors were highly dependent on the substrate temperature. The surface roughness and photoluminescence intensity of the films showed similar behavior as a function of substrate temperature.

The Effects of Substrate Temperature on Optical Properties and Surface Morphology of Nickel Phthalocyanine Thin Films Grown by Organic Evaporator System

2008 ◽  
Vol 55-57 ◽  
pp. 593-596 ◽  
Author(s):  
P. Inchidjuy ◽  
Supakorn Pukird ◽  
J. Nukeaw
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Substrate Temperature ◽  
Absorption Spectra ◽  
X Ray Diffraction ◽  
Electron Energy Level ◽  
Nickel Phthalocyanine ◽  
Structure Surface ◽  
Crystalline Films ◽  
Xrd Patterns

Thin films of Nickel Phthalocyanine (NiPc) are prepared at a base pressure of 10-6 mbar using Organic Evaporator System. The films are deposited onto the glass substrate at various temperatures of 100 0C, 120 0C, 140 0C and 160 0C. Crystalline of NiPc thin films was investigated by X-ray diffraction (XRD) spectroscopy. XRD patterns exhibit to become aggravated crystalline films as monoclinic structure. Surface morphology of NiPc thin films was characterized by field emission scanning electron microscope (FE-SEM). FE-SEM micrographs indicate that fiber-like morphology of NiPc is enhanced with increasing substrate temperature. The optical absorption spectra of these thin films are measured. Present studies reveal that the Q-band of NiPc thin films appears as the change of electron energy level. Absorption spectra obtained from UV-vis of deposited NiPc are declined as the substrate temperature is risen.

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