Surface electronic structure of O(2×1)/Cu(110): Role of the surface state at the zone boundary -point in STS

2006 ◽  
Vol 600 (18) ◽  
pp. 4310-4314 ◽  
Author(s):  
C. Corriol ◽  
J. Hager ◽  
R. Matzdorf ◽  
A. Arnau
Keyword(s):  
Electronic Structure ◽  
Surface State ◽  
Boundary Point ◽  
Zone Boundary ◽  
Surface Electronic Structure

CHANGES INDUCED IN THE SURFACE ELECTRONIC STRUCTURE OF Be(0001) AFTER Si ADSORPTION

2002 ◽  
Vol 09 (02) ◽  
pp. 687-691
Author(s):  
L. I. JOHANSSON ◽  
C. VIROJANADARA ◽  
T. BALASUBRAMANIAN
Keyword(s):  
Electronic Structure ◽  
Band Structure ◽  
Band Gap ◽  
Electronic Properties ◽  
Surface State ◽  
Core Level ◽  
Clean Surface ◽  
Core Level Spectrum ◽  
Surface Band ◽  
Surface Electronic Structure

A study of effects induced in the Be 1s core level spectrum and in the surface band structure after Si adsorption on Be(0001) is reported. The changes in the Be 1s spectrum are quite dramatic. The number of resolvable surface components and the magnitude of the shifts do decrease and the relative intensities of the shifted components are drastically different compared to the clean surface. The surface band structure is also strongly affected after Si adsorption and annealing. At [Formula: see text] the surface state is found to move down from 2.8 to 4.1 eV. The band also splits at around 0.5 Å-1 along both the [Formula: see text] and [Formula: see text] directions. At [Formula: see text] and beyond [Formula: see text] only one surface state is observed in the band gap instead of the two for the clean surface. Our findings indicate that a fairly small amount of Si in the outer atomic layers strongly modifies the electronic properties of these layers.

Role of Surface Electronic Structure in Thin Film Molecular Ordering

2005 ◽  
Vol 95 (25) ◽  
Author(s):  
G. E. Thayer ◽  
J. T. Sadowski ◽  
F. Meyer zu Heringdorf ◽  
T. Sakurai ◽  
R. M. Tromp
Keyword(s):  
Thin Film ◽  
Electronic Structure ◽  
Surface Electronic Structure ◽  
Molecular Ordering

scholarly journals Surface state tunable energy and mass renormalization from homothetic quantum dot arrays

Nanoscale ◽  
2019 ◽  
Vol 11 (48) ◽  
pp. 23132-23138 ◽  
Author(s):  
Ignacio Piquero-Zulaica ◽  
Jun Li ◽  
Zakaria M. Abd El-Fattah ◽  
Leonid Solianyk ◽  
Iker Gallardo ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Quantum Dot ◽  
Surface State ◽  
The State ◽  
Mass Renormalization ◽  
Electron Confinement ◽  
Surface Electronic Structure ◽  
Metal Organic ◽  
Organic Networks

The surface electronic structure is engineered by means of metal–organic networks. We show that on top of electron confinement phenomena, the energy of the state can be controlled via the adatom coordination density.

INFLUENCE OF SURFACE MODIFICATION ON THE ADSORPTION DYNAMICS OF O2 ON Cu{100}

2004 ◽  
Vol 11 (04n05) ◽  
pp. 457-461 ◽  
Author(s):  
P. JUNELL ◽  
M. AHONEN ◽  
M. HIRSIMÄKI ◽  
M. VALDEN
Keyword(s):  
Electronic Structure ◽  
Surface Defects ◽  
Defect Density ◽  
Marginal Effect ◽  
Translational Energy ◽  
Adsorption Dynamics ◽  
Surface Electronic Structure ◽  
Steering Mechanism ◽  
Beam Surface

Translational energy ( E T ) dependence of oxygen ( O 2) adsorption on clean and modified Cu {100} has been studied by molecular beam surface scattering (MBSS) experiments. The role of surface defects on the adsorption dynamics has been investigated by blocking the defects with Ag and oxygen atoms, and by increasing the defect density with Ar +-ion bombardment. At low E T the adsorption of O 2 is shown to be indirect and facilitated either by a dynamical steering mechanism or a precursor state. At high E T the defects have only marginal effect on the adsorption. Additionally, the modification of the surface electronic structure by preadsorbed oxygen is shown to have a pronounced effect on the adsorption dynamics, whereas the electronic structure modification by preadsorbed Ag is shown to be relatively inefficient in changing the reactivity of Cu {100} towards O 2 adsorption.

Photoemission Study of The Electronic Structure of Wurtzite Gan(0001) Surfaces

1997 ◽  
Vol 482 ◽  
Author(s):  
Kevin E. Smith ◽  
Sarnjeet S. Dhesi ◽  
Cristian B. Stagarescu ◽  
James Downes ◽  
D. Doppalapudi ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Valence Band ◽  
Surface State ◽  
High Vacuum ◽  
Valence Band Maximum ◽  
Ultra High Vacuum ◽  
Angle Resolved Photoemission Spectroscopy ◽  
Surface Electronic Structure ◽  
Bond State ◽  
Photoemission Study

AbstractThe surface electronic structure of wurtzite GaN (0001) (1 × 1) has been investigated using angle-resolved photoemission spectroscopy. Surfaces were cleaned by repeated cycles of N2 ion bombardment and annealing in ultra-high vacuum. A well-defined surface state below the top of the valence band is clearly observed. This state is sensitive to the adsorption of both activated H2 and O2, and exists in a projected bulk band gap, below the valence band maximum. The state shows no dispersion perpendicular or parallel to the surface. The symmetry of this surface state is even with respect to the mirror planes of the surface and polarization measurements indicate that it is of spz character, consistent with a dangling bond state.

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