scholarly journals Theoretical study of the expansion of supercritical water in a capillary device at the output of a hydrothermal oxidation process

2007 ◽  
Vol 40 (2) ◽  
pp. 208-217 ◽  
Author(s):  
F. Marias ◽  
S. Vielcazals ◽  
P.Cezac ◽  
J. Mercadier ◽  
F. Cansell
2016 ◽  
Vol 53 (5) ◽  
pp. 1386-1394 ◽  
Author(s):  
Jie Zhu ◽  
Xue-Jing Zhao ◽  
Peng-Cheng Wang ◽  
Ming Lu

2012 ◽  
Vol 109 (39) ◽  
pp. 15669-15672 ◽  
Author(s):  
X. Lin ◽  
X. Hu ◽  
J. J. Concepcion ◽  
Z. Chen ◽  
S. Liu ◽  
...  

AIP Advances ◽  
2018 ◽  
Vol 8 (8) ◽  
pp. 085104
Author(s):  
Caili Zhang ◽  
Jianguo Li ◽  
Zhuxia Zhang ◽  
Nan Dong ◽  
Jian Wang ◽  
...  

Chemosphere ◽  
2020 ◽  
Vol 257 ◽  
pp. 127140 ◽  
Author(s):  
Yi-fan Zhang ◽  
Shou-yu Zhang ◽  
Hao Li ◽  
Cai-wei Wang ◽  
Feng-hao Jiang ◽  
...  

2020 ◽  
Vol 185 ◽  
pp. 116279 ◽  
Author(s):  
Selin Top ◽  
Mesut Akgün ◽  
Ekin Kıpçak ◽  
Mehmet Sinan Bilgili

2013 ◽  
Vol 740-742 ◽  
pp. 455-458 ◽  
Author(s):  
Shigenori Kato ◽  
Kenta Chokawa ◽  
Katsumasa Kamaiya ◽  
Kenji Shiraishi

We investigated the atomistic mechanism of N incorporation during SiC oxidation by the first principles calculation. We found that N atoms play two characteristic roles in NO oxidation of SiC surface. One is that N atoms tend to form three-fold coordinated covalent bonds on a SiC(0001) surface, which assist the termination of surface dangling bonds, leading to improve the interface properties. The other is that N atoms form N-N bond like a double bond. The N2 molecule is desorbed from SiC surface, which do not disturb the oxidation process of SiC surfaces. These results indicate that N incorporation is effective to suppress defect state generation at SiO2/SiC interfaces during SiC oxidation.


2005 ◽  
Vol 722 (1-3) ◽  
pp. 133-137 ◽  
Author(s):  
Masayuki Hata ◽  
Yoshinori Hirano ◽  
Tyuji Hoshino ◽  
Rie Nishida ◽  
Minoru Tsuda

Sign in / Sign up

Export Citation Format

Share Document