Electromechanical properties and charge transport of Ca3TaGa3Si2O14 (CTGS) single crystals at elevated temperatures

2018 ◽  
Vol 317 ◽  
pp. 221-228 ◽  
Author(s):  
Yuriy Suhak ◽  
Michal Schulz ◽  
Ward L. Johnson ◽  
Andrei Sotnikov ◽  
Hagen Schmidt ◽  
...  
Keyword(s):  
Charge Transport ◽  
Single Crystals ◽  
Elevated Temperatures ◽  
Electromechanical Properties

Charge Transport and Observation of Persistent Photoconductivity in Tl6SeI4 Single Crystals

2017 ◽  
Vol 8 (7) ◽  
pp. 1538-1544 ◽  
Author(s):  
Sanjib Das ◽  
John A. Peters ◽  
Wenwen Lin ◽  
Svetlana S. Kostina ◽  
Pice Chen ◽  
...  
Keyword(s):  
Charge Transport ◽  
Single Crystals ◽  
Persistent Photoconductivity

Growth direction dependent separate-channel charge transport in organic weak charge-transfer co-crystal of anthracene-DTTCNQ

2022 ◽  
Author(s):  
Hui Jiang ◽  
Jun Ye ◽  
Peng Hu ◽  
Shengli Zhu ◽  
Yanqin Liang ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Charge Transport ◽  
Electronic Properties ◽  
Single Crystals ◽  
Organic Semiconductors ◽  
Crystal Engineering ◽  
Molecular Crystal ◽  
Growth Direction ◽  
Weak Charge ◽  
Separate Channel

Co-crystallization is an efficient way of molecular crystal engineering to tune the electronic properties of organic semiconductors. In this work, we synthesized anthracene-4,8-bis(dicyanomethylene)4,8-dihydrobenzo[1,2-b:4,5-b’]-dithiophene (DTTCNQ) single crystals as a template to...

The Temperature-Dependent Ideal Shear Strength of Solid Single Crystals

2018 ◽  
Vol 85 (3) ◽  
Author(s):  
Tianbao Cheng ◽  
Daining Fang ◽  
Yazheng Yang
Keyword(s):  
Shear Strength ◽  
Theoretical Model ◽  
Melting Point ◽  
Single Crystals ◽  
Elevated Temperatures ◽  
Absolute Zero ◽  
Temperature Dependent ◽  
Temperature Changes ◽  
First Time ◽  
The Ideal

Knowledge of the ideal shear strength of solid single crystals is of fundamental importance. However, it is very hard to determine this quantity at finite temperatures. In this work, a theoretical model for the temperature-dependent ideal shear strength of solid single crystals is established in the view of energy. To test the drawn model, the ideal shear properties of Al, Cu, and Ni single crystals are calculated and compared with that existing in the literature. The study shows that the ideal shear strength first remains approximately constant and then decreases almost linearly as temperature changes from absolute zero to melting point. As an example of application, the “brittleness parameter” of solids at elevated temperatures is quantitatively characterized for the first time.

scholarly journals Investigation of charge transport properties of [1]Benzothieno[3,2-b][1]-benzothiophene single-crystals in field-effect transistor configuration

2020 ◽  
Vol 78 ◽  
pp. 105605 ◽  
Author(s):  
Xiao Liu ◽  
Xiaolu Su ◽  
Clément Livache ◽  
Lise-Marie Chamoreau ◽  
Sébastien Sanaur ◽  
...  
Keyword(s):  
Charge Transport ◽  
Transport Properties ◽  
Single Crystals ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor

scholarly journals Semiconducting polymer blends that exhibit stable charge transport at high temperatures

Science ◽  
2018 ◽  
Vol 362 (6419) ◽  
pp. 1131-1134 ◽  
Author(s):  
Aristide Gumyusenge ◽  
Dung T. Tran ◽  
Xuyi Luo ◽  
Gregory M. Pitch ◽  
Yan Zhao ◽  
...  
Keyword(s):  
High Temperature ◽  
Polymer Blends ◽  
Charge Transport ◽  
Organic Semiconductors ◽  
Room Temperature ◽  
Elevated Temperatures ◽  
Hole Mobility ◽  
General Strategy ◽  
Semiconducting Polymer ◽  
High Temperature Operation

Although high-temperature operation (i.e., beyond 150°C) is of great interest for many electronics applications, achieving stable carrier mobilities for organic semiconductors at elevated temperatures is fundamentally challenging. We report a general strategy to make thermally stable high-temperature semiconducting polymer blends, composed of interpenetrating semicrystalline conjugated polymers and high glass-transition temperature insulating matrices. When properly engineered, such polymer blends display a temperature-insensitive charge transport behavior with hole mobility exceeding 2.0 cm2/V·s across a wide temperature range from room temperature up to 220°C in thin-film transistors.

Electron Transport Features in Heterostructures 3C-SiC(n)/Si(p) at the Elevated Temperatures

2013 ◽  
Vol 740-742 ◽  
pp. 498-501
Author(s):  
A.V. Afanasyev ◽  
V.A. Ilyin ◽  
V.V. Luchinin ◽  
A.S. Petrov
Keyword(s):  
Electron Transport ◽  
Charge Transport ◽  
Wide Temperature Range ◽  
Silicon Substrate ◽  
Elevated Temperatures ◽  
Reverse Current ◽  
Current Generation ◽  
Temperature Range ◽  
Working Temperature ◽  
Transport Diffusion

3C-SiC (n) / Si (p) heterostructures were obtained and investigated in a wide temperature range. It was shown, the main mechanisms of charge transport diffusion and recombination. The properties of silicon substrate were determining the working temperature range of investigated diodes. Therefore the rectifying properties of 3С-SiC(n)/Si(p) diodes were stable only up to 473 K. Two sites with different activation energies were observed on the Jrev(1/T) curves at fixed voltage: 0,32 eV which, characterized states on the SiC/Si interface, Е2 ≈ 0,55 eV which corresponds to the middle of silicon bandgap and defines existence of reverse current generation component.

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