Superlattice-like film for high data retention and high speed phase change random access memory

2016 ◽  
Vol 120 ◽  
pp. 52-55 ◽  
Author(s):  
Le Li ◽  
Sannian Song ◽  
Zhonghua Zhang ◽  
Liangliang Chen ◽  
Zhitang Song ◽  
...  
Keyword(s):  
Phase Change ◽  
High Speed ◽  
Random Access ◽  
Random Access Memory ◽  
Data Retention ◽  
Access Memory ◽  
High Data

Investigation of Cr0.06(Sb4Te)0.94 alloy for high-speed and high-data-retention phase change random access memory applications

2015 ◽  
Vol 120 (2) ◽  
pp. 537-542 ◽  
Author(s):  
Le Li ◽  
Sannian Song ◽  
Zhonghua Zhang ◽  
Zhitang Song ◽  
Yan Cheng ◽  
...  
Keyword(s):  
Phase Change ◽  
High Speed ◽  
Random Access ◽  
Random Access Memory ◽  
Data Retention ◽  
Access Memory ◽  
High Data ◽  
Memory Applications

Ge/Sb2Te3 nanocomposite multilayer films for high data retention phase-change random access memory application

2010 ◽  
Vol 257 (3) ◽  
pp. 949-953 ◽  
Author(s):  
Changzhou Wang ◽  
Jiwei Zhai ◽  
Zhitang Song ◽  
Fei Shang ◽  
Xi Yao
Keyword(s):  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Multilayer Films ◽  
Data Retention ◽  
Access Memory ◽  
High Data

Device Characteristics of a Ge-doped SbTe alloy for High-speed Phase-change Random Access Memory

2011 ◽  
Vol 59 (2(1)) ◽  
pp. 466-469 ◽  
Author(s):  
Youngseok Kwon ◽  
Jin-hyock Kim ◽  
Sujin Chae ◽  
Youngho Lee ◽  
Soo Gil Jachun ◽  
...  
Keyword(s):  
Phase Change ◽  
High Speed ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory

High Speed Phase Change Random Access Memory with (Ge1Sb2Te4)0.9(Sn1Bi2Te4)0.1Complete Solid Solution

2007 ◽  
Vol 46 (9A) ◽  
pp. 5719-5723 ◽  
Author(s):  
Dong-Ho Ahn ◽  
Tae-Yon Lee ◽  
Dong-Bok Lee ◽  
Sung-Soo Yim ◽  
Jung-Sub Wi ◽  
...  
Keyword(s):  
Solid Solution ◽  
Phase Change ◽  
High Speed ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory

Phase Transition Behaviors and Thermal Conductivity of Ge Doped Sb2Te Thin Films for Phase Change Random Access Memory

2013 ◽  
Vol 367 ◽  
pp. 26-31
Author(s):  
Su Yuan Bai ◽  
Zhe Nan Tang ◽  
Zheng Xing Huang ◽  
Yi Feng Gu
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Thermal Conductivity ◽  
Phase Change ◽  
Composite Films ◽  
Random Access ◽  
Random Access Memory ◽  
Data Retention ◽  
Access Memory ◽  
Ge Doping

The Ge doped Sb2Te thin films (Ge2Sb2Te5, Ge0.15Sb2Te and Ge0.61Sb2Te) were deposited by magnetron co-sputtering using Ge and Sb2Te targets. Ge doping effect on the phase transition behaviors and thermal conductivity of the composite films was investigated. Ge0.61Sb2Te thin films have higher crystallization temperature (~200°C), larger crystallization activation energy (~3.28 eV) , better data retention (~120.8 °Cfor 10 years) and lower thermal conductivity (~0.23 W/mK). Ge0.61Sb2Te thin films is considered to be a promising storage medium for phase change random access memory due to its better thermal stability and lower power consumption.

Scaling of Data Retention Statistics in Phase-Change Random Access Memory

2015 ◽  
Vol 36 (5) ◽  
pp. 454-456 ◽  
Author(s):  
Yongwoo Kwon ◽  
Byoungnam Park ◽  
Dae-Hwan Kang
Keyword(s):  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Data Retention ◽  
Access Memory

Investigation of CuSb4Te2 alloy for high-speed phase change random access memory applications

2012 ◽  
Vol 100 (19) ◽  
pp. 193114 ◽  
Author(s):  
Yegang Lu ◽  
Sannian Song ◽  
Zhitang Song ◽  
Feng Rao ◽  
Liangcai Wu ◽  
...  
Keyword(s):  
Phase Change ◽  
High Speed ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Memory Applications

Preparation of Ge2Sb2Te5 thin film for Phase Change Random Access Memory by RF Magnetron Sputtering and DC Magnetron Sputtering

2006 ◽  
Vol 918 ◽  
Author(s):  
Shin Kikuchi ◽  
Dong Yong Oh ◽  
Isao Kimura ◽  
Yutaka Nishioka ◽  
Koukou Suu
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Phase Change ◽  
High Speed ◽  
Random Access ◽  
Random Access Memory ◽  
Rf Magnetron Sputtering ◽  
Dc Magnetron Sputtering ◽  
Access Memory ◽  
Target Composition

AbstractPhase Change Random Access Memory [PRAM] is one of the candidate for next generation memory due to its non-volitality, high speed, high density and compatibility with Si-based semiconductor process. Ge2Sb2Te5 [GST] thin film , an active layer in this device, is utilized because it has the well-known property of rapid crystallization without phase separation in erasable compact discs industry.We investigated the difference of the character of the GST thin film with various sputtering methods. 100nm thick GST films were prepared with DC magnetron sputtering and RF magnetron sputtering for this experiment. XRF, XRD,SEM and four point probe measurement are used to analyze the electrical properties of these films.As for the composition of the DC sputtered GST films, Te was insufficient from target composition, while the composition of RF sputtered GST films were almost same as target composition. The RF sputtered GST films were composed of hcp by 400°C annealing. On the other hand, the DC sputtered films were mixed-phase of fcc and hcp. The resistivity of DC Sputtered GST films was higher than RF sputtered film cause of poor crystallinity. The uniformity of RF sputtered film was better than DC sputtered film.

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