Influence of processing and annealing steps on electrical properties of InAlN/GaN high electron mobility transistor with Al2O3 gate insulation and passivation

2012 ◽  
Vol 67 (1) ◽  
pp. 74-78 ◽  
Author(s):  
K. Čičo ◽  
D. Gregušová ◽  
J. Kuzmík ◽  
M. Jurkovič ◽  
A. Alexewicz ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility

Electrical properties of GaN (Fe) buffers for AlGaN∕GaN high electron mobility transistor structures

2008 ◽  
Vol 92 (4) ◽  
pp. 042110 ◽  
Author(s):  
A. Y. Polyakov ◽  
N. B. Smirnov ◽  
A. V. Govorkov ◽  
T. G. Yugova ◽  
A. V. Markov ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility

Simulation of electrical properties of InxAl1—xN/AlN/GaN high electron mobility transistor structure

2011 ◽  
Vol 32 (8) ◽  
pp. 083003
Author(s):  
Yang Bi ◽  
Xiaoliang Wang ◽  
Hongling Xiao ◽  
Cuimei Wang ◽  
Cuibai Yang ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Transistor Structure ◽  
High Electron Mobility
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