Rare-earth aluminates as a charge trapping materials for NAND flash memories: Integration and electrical evaluation

2011 ◽  
Vol 65-66 ◽  
pp. 177-183 ◽  
Author(s):  
A. Suhane ◽  
A. Cacciato ◽  
O. Richard ◽  
A. Arreghini ◽  
C. Adelmann ◽  
...  
Keyword(s):  
Rare Earth ◽  
Charge Trapping ◽  
Nand Flash ◽  
Flash Memories ◽  
A Charge

A new spectral approach to modeling charge trapping/detrapping in NAND Flash memories

2014 ◽  
Author(s):  
Giovanni M. Paolucci ◽  
Christian Monzio Compagnoni ◽  
Carmine Miccoli ◽  
Massimo Bertuccio ◽  
Silvia Beltrami ◽  
...  
Keyword(s):  
Charge Trapping ◽  
Spectral Approach ◽  
Nand Flash ◽  
Flash Memories

A Heavy-ion Beam Monitor Based on 3D NAND Flash Memories

2021 ◽  
pp. 1-1
Author(s):  
S. Gerardin ◽  
M. Bagatin ◽  
A. Paccagnella ◽  
S. Beltrami ◽  
A. Costantino ◽  
...  
Keyword(s):  
Ion Beam ◽  
Heavy Ion ◽  
Nand Flash ◽  
Flash Memories ◽  
Beam Monitor ◽  
Heavy Ion Beam

Flash memory based on solution processed hafnium dioxide charge trapping layer

2014 ◽  
Vol 2 (21) ◽  
pp. 4233-4238 ◽  
Author(s):  
Jiaqing Zhuang ◽  
Su-Ting Han ◽  
Ye Zhou ◽  
V. A. L. Roy
Keyword(s):  
Flash Memory ◽  
Sol Gel ◽  
Charge Trapping ◽  
Hafnium Dioxide ◽  
Solution Processed ◽  
Gel Technique ◽  
A Charge

Hafnium dioxide (HfO2) film prepared by the sol–gel technique has been used as a charge trapping layer in organic flash memory.

Improving Read Disturb Characteristics by Self-Boosting Read Scheme for Multilevel NAND Flash Memories

2009 ◽  
Vol 48 (4) ◽  
pp. 04C062 ◽  
Author(s):  
Myounggon Kang ◽  
Ki-Tae Park ◽  
Youngsun Song ◽  
Soonwook Hwang ◽  
Byung Yong Choi ◽  
...  
Keyword(s):  
Nand Flash ◽  
Flash Memories

Rare Earth Ion Implantation for Silicon Based Light Emission

2005 ◽  
Vol 108-109 ◽  
pp. 755-760 ◽  
Author(s):  
Wolfgang Skorupa ◽  
J.M. Sun ◽  
S. Prucnal ◽  
L. Rebohle ◽  
T. Gebel ◽  
...  
Keyword(s):  
Rare Earth ◽  
Ion Implantation ◽  
Indium Tin Oxide ◽  
Light Emission ◽  
Charge Trapping ◽  
Electrical Performance ◽  
Rare Earth Ion ◽  
Light Emitting ◽  
Silicon Based ◽  
Luminescent Centers

Using ion implantation different rare earth luminescent centers (Gd3+, Tb3+, Eu3+, Ce3+, Tm3+, Er3+) were formed in the silicon dioxide layer of a purpose-designed Metal Oxide Silicon (MOS) capacitor with advanced electrical performance, further called a MOS-light emitting device (MOSLED). Efficient electroluminescence was obtained for the wavelength range from UV to infrared with a transparent top electrode made of indium-tin oxide. Top values of the efficiency of 0.3 % corresponding to external quantum efficiencies distinctly above the percent range were reached. The electrical properties of these devices such as current-voltage and charge trapping characteristics, were also evaluated. Finally, application aspects to the field of biosensing will be shown.

Triple-Level-Cell/Single-Level-Cell Mix-Mode Operation Induced Data Retention Degradation in 3-D NAND Flash Memories

2021 ◽  
pp. 1-1
Author(s):  
Yu-Heng Liu ◽  
Yu-Siang Yang ◽  
Chih-Yuan Tseng ◽  
Wei Lin ◽  
An-Chang Liu ◽  
...  
Keyword(s):  
Nand Flash ◽  
Data Retention ◽  
Flash Memories ◽  
Single Level ◽  
Mode Operation

Total Ionizing Dose Effects in 3-D NAND Flash Memories

2019 ◽  
Vol 66 (1) ◽  
pp. 48-53 ◽  
Author(s):  
Marta Bagatin ◽  
Simone Gerardin ◽  
Alessandro Paccagnella ◽  
Silvia Beltrami ◽  
Alessandra Costantino ◽  
...  
Keyword(s):  
Nand Flash ◽  
Total Ionizing Dose ◽  
Flash Memories ◽  
Dose Effects ◽  
Total Ionizing Dose Effects
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