Investigation of oxygen annealing effects on RF sputter deposited SiC thin films

2006 ◽  
Vol 50 (7-8) ◽  
pp. 1189-1193 ◽  
Author(s):  
R.M. Todi ◽  
K.B. Sundaram ◽  
A.P. Warren ◽  
K. Scammon
Keyword(s):  
Thin Films ◽  
Oxygen Annealing ◽  
Annealing Effects ◽  
Sputter Deposited

Annealing effects on the ferromagnetic resonance linewidths of sputter-deposited Fe100−xCox(001) thin films (x < 11)

2015 ◽  
Vol 117 (17) ◽  
pp. 17A917
Author(s):  
A. Kusaoka ◽  
J. Kimura ◽  
Y. Takahashi ◽  
N. Inaba ◽  
F. Kirino ◽  
...  
Keyword(s):  
Thin Films ◽  
Ferromagnetic Resonance ◽  
Annealing Effects ◽  
Sputter Deposited

Characterization of reactive phase formation in sputter-deposited Ni/Al multilayer thin films using TEM

1996 ◽  
Vol 54 ◽  
pp. 1000-1001
Author(s):  
G. Lucadamo ◽  
K. Barmak ◽  
C. Michaelsen
Keyword(s):  
Thin Films ◽  
Phase Formation ◽  
Dark Field ◽  
Nickel Layer ◽  
Multilayer Thin Films ◽  
Cross Sectional ◽  
Dark Field Imaging ◽  
Transmission Electron ◽  
Sputter Deposited ◽  
Constant Heating

The subject of reactive phase formation in multilayer thin films of varying periodicity has stimulated much research over the past few years. Recent studies have sought to understand the reactions that occur during the annealing of Ni/Al multilayers. Dark field imaging from transmission electron microscopy (TEM) studies in conjunction with in situ x-ray diffraction measurements, and calorimetry experiments (isothermal and constant heating rate), have yielded new insights into the sequence of phases that occur during annealing and the evolution of their microstructure.In this paper we report on reactive phase formation in sputter-deposited lNi:3Al multilayer thin films with a periodicity A (the combined thickness of an aluminum and nickel layer) from 2.5 to 320 nm. A cross-sectional TEM micrograph of an as-deposited film with a periodicity of 10 nm is shown in figure 1. This image shows diffraction contrast from the Ni grains and occasionally from the Al grains in their respective layers.

TEM studies of solid-state reactions in sputter-deposited Nb/Al multilayer thin films

1996 ◽  
Vol 54 ◽  
pp. 1020-1021
Author(s):  
F. Ma ◽  
S. Vivekanand ◽  
K. Barmak ◽  
C. Michaelsen
Keyword(s):  
Thin Films ◽  
Solid State ◽  
Stoichiometric Composition ◽  
Analytical Electron Microscopy ◽  
Grain Structure ◽  
Solid State Reactions ◽  
Multilayer Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sputter Deposited

Solid state reactions in sputter-deposited Nb/Al multilayer thin films have been studied by transmission and analytical electron microscopy (TEM/AEM), differential scanning calorimetry (DSC) and X-ray diffraction (XRD). The Nb/Al multilayer thin films for TEM studies were sputter-deposited on (1102)sapphire substrates. The periodicity of the films is in the range 10-500 nm. The overall composition of the films are 1/3, 2/1, and 3/1 Nb/Al, corresponding to the stoichiometric composition of the three intermetallic phases in this system.Figure 1 is a TEM micrograph of an as-deposited film with periodicity A = dA1 + dNb = 72 nm, where d's are layer thicknesses. The polycrystalline nature of the Al and Nb layers with their columnar grain structure is evident in the figure. Both Nb and Al layers exhibit crystallographic texture, with the electron diffraction pattern for this film showing stronger diffraction spots in the direction normal to the multilayer. The X-ray diffraction patterns of all films are dominated by the Al(l 11) and Nb(l 10) peaks and show a merging of these two peaks with decreasing periodicity.

Transformation and Deformation Behavior in Sputter-Deposited Ti-Ni-Cu Thin Films

1995 ◽  
Vol 05 (C8) ◽  
pp. C8-689-C8-694 ◽  
Author(s):  
T. Hashinaga ◽  
S. Miyazaki ◽  
T. Ueki ◽  
H. Horikawa
Keyword(s):  
Thin Films ◽  
Deformation Behavior ◽  
Sputter Deposited

The Correlation of Adhesion Strength with Barrier Structure in Cu Metallization

2003 ◽  
Vol 766 ◽  
Author(s):  
A. Sekiguchi ◽  
J. Koike ◽  
K. Ueoka ◽  
J. Ye ◽  
H. Okamura ◽  
...  
Keyword(s):  
Thin Films ◽  
Adhesion Strength ◽  
Nitrogen Concentration ◽  
Scratch Test ◽  
Barrier Structure ◽  
Barrier Layers ◽  
Cu Metallization ◽  
Microstructure Observation ◽  
Sputter Deposited ◽  
Sulfur Containing

AbstractAdhesion strength in sputter-deposited Cu thin films on various types of barrier layers was investigated by scratch test. The barrier layers were Ta1-xNx with varied nitrogen concentration of 0, 0.2, 0.3, and 0.5. Microstructure observation by TEM indicated that each layer consists of mixed phases of β;-Ta, bcc-TaN0.1, hexagonal-TaN, and fcc-TaN, depending on the nitrogen concentration. A sulfur- containing amorphous phase was also present discontinuously at the Cu/barrier interfaces in all samples. Scratch test showed that delamination occurred at the Cu/barrier interface and that the overall adhesion strength increased with increasing the nitrogen concentration. A good correlation was found between the measured adhesion strength and the composing phases in the barrier layer.

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