High power 4H–SiC pin diodes (10kV class) with record high carrier lifetime

2006 ◽  
Vol 50 (7-8) ◽  
pp. 1368-1370 ◽  
Author(s):  
Pavel A. Ivanov ◽  
Michael E. Levinshtein ◽  
John W. Palmour ◽  
Mrinal K. Das ◽  
Brett A. Hull
Keyword(s):  
High Power ◽  
Carrier Lifetime ◽  
Pin Diodes ◽  
High Carrier

ChemInform Abstract: SIMPLE METHOD OF FABRICATING AND PASSIVATING HIGH POWER PIN DIODES

1978 ◽  
Vol 9 (31) ◽  
Author(s):  
A. ROSEN ◽  
G. A. SWARTZ ◽  
F. C. DUIGON ◽  
A. M. GOMBAR
Keyword(s):  
High Power ◽  
Simple Method ◽  
Pin Diodes

12 kV 4H-SiC p-IGBTs with Record Low Specific On-Resistance

2008 ◽  
Vol 600-603 ◽  
pp. 1187-1190 ◽  
Author(s):  
Q. Jon Zhang ◽  
Charlotte Jonas ◽  
Joseph J. Sumakeris ◽  
Anant K. Agarwal ◽  
John W. Palmour
Keyword(s):  
Carrier Lifetime ◽  
Drift Region ◽  
Gate Bias ◽  
Enhancement Layer ◽  
Channel Mobility ◽  
Dc Characteristics ◽  
Blocking Voltage ◽  
High Carrier ◽  
P Type ◽  
First Time

DC characteristics of 4H-SiC p-channel IGBTs capable of blocking -12 kV and conducting -0.4 A (-100 A/cm2) at a forward voltage of -5.2 V at 25°C are demonstrated for the first time. A record low differential on-resistance of 14 mW×cm2 was achieved with a gate bias of -20 V indicating a strong conductivity modulation in the p-type drift region. A moderately doped current enhancement layer grown on the lightly doped drift layer effectively reduces the JFET resistance while maintains a high carrier lifetime for conductivity modulation. A hole MOS channel mobility of 12.5 cm2/V-s at -20 V of gate bias was measured with a MOS threshold voltage of -5.8 V. The blocking voltage of -12 kV was achieved by Junction Termination Extension (JTE).

Lifetime Enhancement of 4H-SiC PiN Diodes Using High Temperature Oxidation Treatment

2018 ◽  
Vol 924 ◽  
pp. 440-443
Author(s):  
Yeganeh Bonyadi ◽  
Peter M. Gammon ◽  
Olayiwola Alatise ◽  
Roozbeh Bonyadi ◽  
Philip A. Mawby
Keyword(s):  
High Temperature ◽  
Thermal Oxidation ◽  
Carrier Lifetime ◽  
Drift Region ◽  
Electrical Characteristics ◽  
Pin Diodes ◽  
Oxidation Treatment ◽  
Temperature Oxidation ◽  
Bipolar Devices ◽  
Minority Carriers

In this paper, the application of a high temperature thermal oxidation and annealing process to 4H-SiC PiN diodes with 35 μm thick drift regions is explored, the aim of which was to increase the carrier lifetime in the 4H-SiC. Diodes were fabricated using 4H-SiC material and underwent a thermal oxidation in dry pure O2 at 1550◦C followed by an argon anneal at the same temperature. Reverse recovery tests indicated a carrier lifetime increase of around 42% which is due to increase of excessive minority carriers in the drift region. The switching results illustrate that the use of this process is a highly effective and efficient way of enhancing the electrical characteristics of high voltage 4H-SiC bipolar devices.

HIGH POWER, DRIFT-FREE 4H-SiC PIN DIODES

2005 ◽  
Author(s):  
MRINAL K. DAS ◽  
JOSEPH J. SUMAKERIS ◽  
BRETT A. HULL ◽  
JIM RICHMOND ◽  
SUMI KRISHNASWAMI ◽  
...  
Keyword(s):  
High Power ◽  
Pin Diodes
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