High frequency and static dielectric constants of zinc blende structured solids

2011 ◽  
Vol 151 (24) ◽  
pp. 1945-1948 ◽  
Author(s):  
A.S. Verma
Keyword(s):  
High Frequency ◽  
Dielectric Constants ◽  
Zinc Blende ◽  
Static Dielectric Constants

scholarly journals Optical properties and electronic polarizability of boron-antimonide semiconductor

2017 ◽  
Vol 5 (2) ◽  
pp. 43 ◽  
Author(s):  
Salah Daoud ◽  
Abdelhakim Latreche
Keyword(s):  
Optical Properties ◽  
High Frequency ◽  
Theoretical Data ◽  
Dielectric Constants ◽  
Electronic Polarizability ◽  
Micro Hardness ◽  
Plasmon Energy ◽  
Empirical Formulas ◽  
Electronegativity Difference ◽  
Static Dielectric Constants

The high-frequency and static dielectric constants, the reflex index, the total optical electronegativity difference, the bulk modulus, the micro-hardness, the plasmon energy and the electronic polarizability of cubic zincblende boron-antimonide semiconductor have been estimated by using some empirical formulas. These parameters are analyzed by comparing them against the available experimental and theoretical data. In general, our obtained results agree well with other theoretical data from the literature.

scholarly journals Quasi-linear correlation between high-frequency and static die-lectric constants in II-VI and III-V semiconductors

2016 ◽  
Vol 5 (1) ◽  
pp. 4
Author(s):  
Salah Daoud ◽  
Abdelhalim Bencheikh ◽  
Laarbi Belagraa
Keyword(s):  
Linear Regression ◽  
Linear Relationship ◽  
Linear Correlation ◽  
High Frequency ◽  
Null Hypothesis ◽  
Alkali Halides ◽  
Dielectric Constants ◽  
Semiconductor Materials ◽  
Quantitative Form ◽  
Static Dielectric Constants

A quantitative form of the linear correlation between the high-frequency and static dielectric constants in ANB8-N (N = 2, 3) tetrahedrally coordinated semiconductor materials, and also in I-VII group alkali halides was studied. So, a quasi-linear relationship was found between the high-frequency and the static dielectric constants for some selected II-VI (ZnS, ZnSe, ZnTe and CdTe) and III-V (AlP, AlAs, AlSb,….etc) cubic zincblende type materials, in the other side a weak uphill linear relationship has been found in the case of I-VII (LiF, NaF, LiCl,….etc) group alkali halides compounds. In the case of II-VI and III-V cubic zincblende semiconductors, the linear regression is established with a correlation coefficient ( ) of about 0.98. The significance of the linear regression is given as the probability P <0.0001 of the null hypothesis.

DIELECTRIC RELAXATION IN LIQUIDS: II. ISOMERIC PENTANEDIOLS

1961 ◽  
Vol 39 (11) ◽  
pp. 2139-2154 ◽  
Author(s):  
D. W. Davidson
Keyword(s):  
Hydrogen Bonding ◽  
High Frequency ◽  
Low Temperatures ◽  
Dipole Moments ◽  
Frequency Dispersion ◽  
Liquid Structure ◽  
Dielectric Constants ◽  
Oh Groups ◽  
High Frequencies ◽  
Static Dielectric Constants

For five pentanediols the infrared spectra, the dipole moments, and the static dielectric constants show an increasing degree of internal hydrogen bonding with increasing proximity of the OH groups. The dielectric dispersion loci at low temperatures are skewed arcs over most of the dispersion range. Values of the parameter β decrease from ca. 1 to 0.55 in the series 1,5-, 1,4-, 1,2-, 2,4-, and 2,3-pentanediol, which is also the order of increasing relaxation time τ0 at low temperatures. Increased τ0 is associated with increased irregularity of intermolecular hydrogen bonding, an effect which supports the view that relaxation proceeds by a co-operative mechanism which is facilitated by regularity in the liquid structure. At temperatures of "structural relaxation", values of log τ0 are linear in (T–T∞)−1; the proportionality constants, but not the T∞'s, are the same for all five diols.The experimental behavior at relatively high frequencies departs from both the skewed-arc and Glarum equations, although less from the latter. These departures are compared with the high frequency dispersion regions in n-propanol.

Dielectric properties of the hydrates of argon and nitrogen

1968 ◽  
Vol 46 (10) ◽  
pp. 1673-1681 ◽  
Author(s):  
S. R. Gough ◽  
E. Whalley ◽  
D. W. Davidson
Keyword(s):  
Dielectric Properties ◽  
High Frequency ◽  
Dielectric Constants ◽  
Water Molecules ◽  
Circular Arc ◽  
Circular Arcs ◽  
In Series ◽  
Temperature And Pressure ◽  
Water Lattice ◽  
Static Dielectric Constants

The dielectric relaxation of water in the structure I clathrate hydrates of argon and nitrogen was studied over a range of temperature and pressure. Hydrates were slowly grown at pressures of 1 to 2 kbar in a coaxial cell enclosed in a pressure vessel. The complex permittivity loci resemble circular arcs with static dielectric constants of ~56 at 0 °C and high-frequency dielectric constants of 2.85 ± 0.05. Relaxation near 0 °C is about as slow as in ice I, but activation energies and entropies are much smaller. Formation of Bjerrum defects probably takes place preferentially near the occasional sites at which argon and nitrogen molecules have replaced water molecules in the lattice. The much faster relaxations found previously in the isostructural hydrates of ethers arise from orientational defects induced in the water lattice by the encaged molecules, a small proportion of which may form hydrogen bonds with water. The effect of small gaps in series with samples showing circular-arc dispersion behavior was evaluated.

THE LOW-FREQUENCY DIELECTRIC PROPERTIES OF ETHYLENE OXIDE AND ETHYLENE OXIDE HYDRATE

1963 ◽  
Vol 41 (6) ◽  
pp. 1424-1434 ◽  
Author(s):  
D. W. Davidson ◽  
G. J. Wilson
Keyword(s):  
Ethylene Oxide ◽  
High Frequency ◽  
Low Temperatures ◽  
Low Frequency ◽  
Dielectric Constants ◽  
Water Molecules ◽  
Kcal Mole ◽  
Absorption Region ◽  
Experimental Values ◽  
Static Dielectric Constants

The static dielectric constant of liquid ethylene oxide has been measured between 158 and 286 °K. The hydrate of ethylene oxide exhibits a dispersion–absorption region characterized by static dielectric constants about one-third as large as those of ice and by relatively large "high-frequency" dielectric constants (ε1 = 7.5 at 0 °C). This region may be approximately described as a circular arc locus, but may be represented somewhat better by a superposition of two (or three) semicircular dispersions. In either case, the activation energy for the relaxation of water molecules, to which this region is ascribed, is ca. 6.7 kcal/mole, except at low temperatures, where it becomes smaller. Experimental values of ε1 agree roughly with those calculated for comparatively rapid orientation of ethylene oxide molecules in the cavities of the hydrate. Such orientation may account for absorption maxima observed at 11 Mc/sec and above 100 Mc/sec at 90 °K.

High-frequency and below bandgap anisotropic dielectric constants in α-(AlxGa1−x)2O3 ( 0≤x≤1)

2021 ◽  
Vol 119 (9) ◽  
pp. 092103
Author(s):  
Matthew Hilfiker ◽  
Ufuk Kilic ◽  
Megan Stokey ◽  
Riena Jinno ◽  
Yongjin Cho ◽  
...  
Keyword(s):  
High Frequency ◽  
Dielectric Constants ◽  
Anisotropic Dielectric

Static dielectric constants of the N,N-dimethylformamide/2-methoxyethanol solvent system at various temperatures

1992 ◽  
Vol 70 (12) ◽  
pp. 2895-2899 ◽  
Author(s):  
Fulvio Corradini ◽  
Luigi Marcheselli ◽  
Lorenzo Tassi ◽  
Giuseppe Tosi
Keyword(s):  
Liquid State ◽  
Specific Interaction ◽  
Solvent System ◽  
Liquid Mixtures ◽  
Dielectric Constants ◽  
Empirical Equations ◽  
Binary Liquid ◽  
Fraction Mixture ◽  
Static Dielectric Constants ◽  
Formation Of Complexes

Measurements of static dielectric constants (ε) have been made for binary liquid mixtures of N,N-dimethylformamide (DMF)/2-methoxyethanol (ME) at 19 temperatures ranging from −10 to +80 °C. Some empirical equations of the type ε = ε(T), ε = ε(X1), and ε = ε(T,X1) have been applied to check their validity. The εE values, which refer to the deviation of the dielectric constants of the binaries from the values arising from mole fraction mixture law, have been calculated. Deviations from ideal behaviour have been found to be positive at all temperatures. The positive εE values are attributed to a specific interaction between unlike molecules, which leads to the formation of complexes between DMF and ME in the liquid state. These nDMF•mME complex moieties were found to have the stoichiometric ratios 2:1, 1:1, and 1:2 in the temperature range of −10 to +80 °C.

Electronic and optical properties of zinc-blende GeC by first principles study

2015 ◽  
Vol 29 (20) ◽  
pp. 1550103
Author(s):  
Jinhui Zhai ◽  
Jinguang Zhai ◽  
Ajun Wan
Keyword(s):  
Optical Properties ◽  
First Principles ◽  
Density Functional ◽  
Dielectric Constants ◽  
Electronic And Optical Properties ◽  
Optical Functions ◽  
Zinc Blende ◽  
The Density Functional Theory ◽  
Valence Bands ◽  
Energy Dependent

The electronic and optical properties of zinc-blende (zb)[Formula: see text]GeC have been investigated using first principles calculations based on the density functional theory (DFT). The obtained band gap of zb–GeC is 2.30[Formula: see text]eV by means of Heyd–Scuseria–Ernzerhof (HSE) functional. We have discussed the energy-dependent optical functions including dielectric constants, refractive index, absorption, reflectivity, and energy-loss spectrum in detail. The results reveal that zb–GeC has a higher static dielectric constant compared with that of zb–SiC. The optical functions are mainly associated with the interband transitions from the occupied valence bands (VBs) Ge[Formula: see text][Formula: see text] and C[Formula: see text][Formula: see text] states to Ge[Formula: see text][Formula: see text], [Formula: see text] and C[Formula: see text][Formula: see text] states of the unoccupied conduction bands (CBs).

LOW LOSS DIELECTRIC MATERIALS FOR HIGH FREQUENCY APPLICATIONS

2009 ◽  
Vol 23 (17) ◽  
pp. 3649-3654 ◽  
Author(s):  
MOHAN V. JACOB
Keyword(s):  
High Frequency ◽  
Room Temperature ◽  
Low Cost ◽  
Dielectric Materials ◽  
Dielectric Constants ◽  
Transmission Losses ◽  
Low Loss ◽  
Microwave Characterization ◽  
Materials Used ◽  
Low Temperature Electronics

The microwave properties of some of the low cost materials which can be used in high frequency applications with low transmission losses are investigated in this paper. One of the most accurate microwave characterization techniques, Split Post Dielectric Resonator technique (SPDR) is used for the experimental investigation. The dielectric constants of the 3 materials scrutinized at room temperature and at 10K are 3.65, 2.42, 3.61 and 3.58, 2.48, 3.59 respectively. The corresponding loss tangent values are 0.00370, 0.0015, 0.0042 and 0.0025, 0.0009, 0.0025. The high frequency transmission losses are comparable with many of the conventional materials used in low temperature electronics and hence these materials could be implemented in such applications.

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