Vacancies and B doping in Si nanocrystals

2010 ◽  
Vol 150 (1-2) ◽  
pp. 130-132 ◽  
Author(s):  
Jae-Hyeon Eom ◽  
Tzu-Liang Chan ◽  
James R. Chelikowsky
Keyword(s):  
Si Nanocrystals ◽  
B Doping

Photoluminescence from n-(p-) type impurity doped Si nanocrystals

2000 ◽  
Vol 638 ◽  
Author(s):  
Minoru Fujii ◽  
Atsushi Mimura ◽  
Shinji Hayashi ◽  
Dmitri Kovalev ◽  
Frederick Koch
Keyword(s):  
Free Electrons ◽  
Electron Hole ◽  
P Concentration ◽  
Si Nanocrystals ◽  
Donor And Acceptor ◽  
Impurity Doped ◽  
Pl Intensity ◽  
B Doping ◽  
Three Body ◽  
P Type

AbstractEffects of impurity (P and B) doping on the photoluminescence (PL) properties of Si nanocrystals (nc-Si) in SiO2 thin films are studied. It is shown that with increasing P concentration, PL intensity first increases and then decreases. In the P concentration range where PL intensity increases, quenching of the defect-related PL is observed, suggesting that dangling-bond defects are passivated by P doping. On the other hand, in the range where PL intensity decreases, optical absorptiondue to the intravalley transitions of free electrons generated by P doping appears. The generation of free electrons andthe resultant three-body Auger recombination of electron-hole pairs is considered to be responsible for theobserved PL quenching. In the case of B doping, the behavior is much different. With increasing B concentration, PL intensity decreases monotonously. By combining the results obtained for P and B doped samples, theeffects of donor and acceptor impurities on the PL properties of nc-Si are discussed.

Site discrimination and size effect of B-doping in Si nanocrystals by second-neighbor atom consideration

2019 ◽  
Vol 126 (12) ◽  
pp. 125117
Author(s):  
H. Li ◽  
H. N. Du ◽  
X. W. He ◽  
Y. Y. Shen ◽  
Y. C. Wang ◽  
...  
Keyword(s):  
Size Effect ◽  
Si Nanocrystals ◽  
B Doping ◽  
Site Discrimination ◽  
Neighbor Atom

Photoluminescence and Raman Studies on Boron-Doped Nanocrystalline Si:H Thin Films

2007 ◽  
Vol 121-123 ◽  
pp. 933-938
Author(s):  
Hong Chen ◽  
W.Z. Shen ◽  
W.S. Wei
Keyword(s):  
Thin Films ◽  
Surface States ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Boron Doped ◽  
Si Nanocrystals ◽  
Peak Energy ◽  
Pl Intensity ◽  
B Doping ◽  
Log Normal

We report on room-temperature visible photoluminescence (PL) of B-doped hydrogenated nanocrystalline Si (nc-Si:H) thin films grown by plasma enhanced chemical vapor deposition. It is found that with increasing the boron doing ratio, the PL peak energy blue shifts while the PL intensity first increases and then decreases. The PL profiles can be well reproduced by using the model of Islam and Kumar [J. Appl. Phys. 93, 1753 (2003)] which incorporates the effects of quantum confinement and localized surface states, together with a log-normal rather than normal crystallite size distribution. The yielded microstructural information is in good agreement with the Raman analysis, revealing that B doping tends to reduce the size of Si nanocrystals and the PL intensity is jointly determined by the amount of amorphous Si:H phase and the fraction of B-doped Si nanocrystals. These results also provide implications to realize control of PL properties of nc-Si:H by B doping under optimized growth conditions.

Formation of Luminescent Si Nanocrystals by High-Temperature Annealing of Ion-Beam-Sputtered Si/SiO2 Multilayers

2003 ◽  
Vol 775 ◽  
Author(s):  
Suk-Ho Choi ◽  
Jun Sung Bae ◽  
Kyung Jung Kim ◽  
Dae Won Moon
Keyword(s):  
Quantum Confinement ◽  
Radiative Recombination ◽  
Ion Beam ◽  
Quantum Confinement Effect ◽  
Visible Range ◽  
Ion Beam Sputtering ◽  
Transmission Electron ◽  
Si Nanocrystals ◽  
Beam Sputtering ◽  
Microscopy Images

AbstractSi/SiO2 multilayers (MLs) have been prepared under different deposition temperatures (TS) by ion beam sputtering. The annealing at 1200°C leads to the formation of Si nanocrystals in the Si layer of MLs. The high resolution transmission electron microscopy images clearly demonstrate the existence of Si nanocrystals, which exhibit photoluminescence (PL) in the visible range when TS is ≥ 300°C. This is attributed to well-separation of nanocrystals in the higher-TS samples, which is thought to be a major cause for reducing non-radiative recombination in the interface between Si nanocrystal and surface oxide. The visible PL spectra are enhanced in its intensity and are shifted to higher energy by increasing TS. These PL behaviours are consistent with the quantum confinement effect of Si nanocrystals.

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