Erratum: “Optical transitions and energy relaxation of hot carriers in Si nanocrystals” [Appl. Phys. Lett. 97, 231116 (2010)]

2013 ◽  
Vol 102 (16) ◽  
pp. 169903 ◽  
Author(s):  
A. N. Poddubny ◽  
A. A. Prokofiev ◽  
I. N. Yassievich
Keyword(s):  
Energy Relaxation ◽  
Optical Transitions ◽  
Hot Carriers ◽  
Si Nanocrystals

scholarly journals Optical transitions and energy relaxation of hot carriers in Si nanocrystals

2010 ◽  
Vol 97 (23) ◽  
pp. 231116 ◽  
Author(s):  
A. N. Poddubny ◽  
A. A. Prokofiev ◽  
I. N. Yassievich
Keyword(s):  
Energy Relaxation ◽  
Optical Transitions ◽  
Hot Carriers ◽  
Si Nanocrystals

Diffusion and energy relaxation of hot carriers in graphene

2011 ◽  
Author(s):  
Brian Ruzicka ◽  
Lalani K. Werake ◽  
Nardeep Kumar ◽  
Shuai Wang ◽  
Kian Ping Loh ◽  
...  
Keyword(s):  
Energy Relaxation ◽  
Hot Carriers

Energy relaxation of lower-dimensional hot carriers studied with picosecond photoluminescence

1988 ◽  
Vol 38 (18) ◽  
pp. 13323-13334 ◽  
Author(s):  
R. W. J. Hollering ◽  
T. T. J. M. Berendschot ◽  
H. J. A. Bluyssen ◽  
H. A. J. M. Reinen ◽  
P. Wyder ◽  
...  
Keyword(s):  
Energy Relaxation ◽  
Hot Carriers ◽  
Lower Dimensional

Evidence of quantum confinement effects on interband optical transitions in Si nanocrystals

2010 ◽  
Vol 82 (4) ◽  
Author(s):  
M. I. Alonso ◽  
I. C. Marcus ◽  
M. Garriga ◽  
A. R. Goñi ◽  
J. Jedrzejewski ◽  
...  
Keyword(s):  
Quantum Confinement ◽  
Optical Transitions ◽  
Confinement Effects ◽  
Quantum Confinement Effects ◽  
Si Nanocrystals

scholarly journals Hot Carriers in CVD-Grown Graphene Device with a Top h-BN Layer

2018 ◽  
Vol 2018 ◽  
pp. 1-7 ◽  
Author(s):  
C. Chuang ◽  
M. Mineharu ◽  
N. Matsumoto ◽  
M. Matsunaga ◽  
C.-W. Liu ◽  
...  
Keyword(s):  
Phonon Scattering ◽  
Average Rate ◽  
Relaxation Times ◽  
Energy Relaxation ◽  
Heat Diffusion ◽  
Multilayer Graphene ◽  
Hot Carriers ◽  
Conductance Fluctuations ◽  
Carrier Temperature ◽  
Grown Graphene

We investigate the energy relaxation of hot carriers in a CVD-grown graphene device with a top h-BN layer by driving the devices into the nonequilibrium regime. By using the magnetic field dependent conductance fluctuations of our graphene device as a self-thermometer, we can determine the effective carrier temperature Te at various driving currents I while keeping the lattice temperature TL fixed. Interestingly, it is found that Te is proportional to I, indicating little electron-phonon scattering in our device. Furthermore the average rate of energy loss per carrier Pe is proportional to (Te 2-TL 2), suggesting the heat diffusion rather than acoustic phonon processes in our system. The long energy relaxation times due to the weak electron-phonon coupling in CVD graphene capped with h-BN layer as well as in exfoliated multilayer graphene can find applications in hot carrier graphene-based devices.

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