Uniaxial strain effects on the optoelectronic properties of GaN nanowires

2016 ◽  
Vol 97 ◽  
pp. 327-334 ◽  
Author(s):  
Sihao Xia ◽  
Lei Liu ◽  
Yike Kong ◽  
Meishan Wang
Keyword(s):  
Optoelectronic Properties ◽  
Uniaxial Strain ◽  
Strain Effects ◽  
Gan Nanowires

Uniaxial Strain Effects on Mott and Superconducting Transitions in κ-(ET)2Cu2(CN)3

2011 ◽  
Vol 80 (7) ◽  
pp. 074702 ◽  
Author(s):  
Yasuhiro Shimizu ◽  
Mitsuhiko Maesato ◽  
Gunzi Saito
Keyword(s):  
Uniaxial Strain ◽  
Strain Effects ◽  
Superconducting Transitions

scholarly journals Unravelling uniaxial strain effects on electronic correlations, hybridization and bonding in transition metal oxides

2019 ◽  
Vol 164 ◽  
pp. 618-626 ◽  
Author(s):  
Zhihua Yong ◽  
Jiajun Linghu ◽  
Shibo Xi ◽  
Xinmao Yin ◽  
Meng Lee Leek ◽  
...  
Keyword(s):  
Transition Metal ◽  
Metal Oxides ◽  
Transition Metal Oxides ◽  
Uniaxial Strain ◽  
Strain Effects ◽  
Electronic Correlations

Differences in optoelectronic properties between H-saturated and unsaturated GaN nanowires with DFT method

2017 ◽  
Vol 31 (12) ◽  
pp. 1750084 ◽  
Author(s):  
Yu Diao ◽  
Lei Liu ◽  
Sihao Xia ◽  
Yike Kong
Keyword(s):  
Geometry Optimization ◽  
Dft Method ◽  
Growth Direction ◽  
Optoelectronic Properties ◽  
Dangling Bonds ◽  
Nanowire Diameter ◽  
Gan Nanowires ◽  
Saturated Models ◽  
Atomic Displacements ◽  
Bulk Gan

To investigate the influences of dangling bonds on GaN nanowires surface, the differences in optoelectronic properties between H-saturated and unsaturated GaN nanowires are researched through first-principles study. The GaN nanowires along the [0001] growth direction with diameters of 3.7, 7.5 and 9.5 Å are considered. According to the results, H-saturated GaN nanowires are more stable than the unsaturated ones. With increasing nanowire diameter, unsaturated GaN nanowires become more stable, while the stability of H-saturated GaN nanowires has little change. After geometry optimization, the atomic displacements of unsaturated and H-saturated models are almost reversed. In (0001) crystal plane, Ga atoms tend to move inwards and N atoms tend to move outwards slightly for the unsaturated nanowires, while Ga atoms tend to move outwards and N atoms tend to move inwards slightly for the H-saturated nanowires. Besides, with increasing nanowire diameter, the conduction band minimum of H-saturated nanowire moves to the lower energy side, while that of the unsaturated nanowire changes slightly. The bandgaps of H-saturated nanowires are approaching to bulk GaN as the diameter increases. Absorption curves and reflectivity curves of the unsaturated and H-saturated nanowires exhibit the same trend with the change of energy except the H-saturated models which show larger variations. Through all the calculated results above, we can better understand the effects of dangling bonds on the optoelectronic properties of GaN nanowires and select more proper calculation models and methods for other calculations.

Strain Effects on Optical Gain Properties of GaN/AlGaN Quantum Well Lasers

1996 ◽  
Vol 421 ◽  
Author(s):  
M. Suzuki ◽  
T. Uenoyama
Keyword(s):  
Quantum Well ◽  
First Principles ◽  
Carrier Density ◽  
Optical Gain ◽  
Uniaxial Strain ◽  
Quantum Well Lasers ◽  
Physical Parameters ◽  
First Principles Calculations ◽  
Strain Effects ◽  
Laser Performance

AbstractSubband structures and optical gains of the strained wurtzite GaN/AlGaN quantum well lasers are theoretically investigated on the basis of k.p theory. First-principles calculations are used for deriving the unknown physical parameters, such as deformation potentials. Neither compressive nor tensile biaxial strains are so effective on the reduction of the threshold carrier density. It is also found that the uniaxial strain in the c-plane is one of the preferable approaches for the efficient improvement of the laser performance.

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