Deposition of CuCdS2 thin film by single step solution process at low temperature as a novel absorber for photovoltaic applications

2014 ◽  
Vol 76 ◽  
pp. 125-134 ◽  
Author(s):  
V. Nirmal Kumar ◽  
R. Suriakarthick ◽  
Y. Hayakawa ◽  
Shamima Hussain ◽  
G.M. Bhalerao ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Solution Process ◽  
Single Step ◽  
Photovoltaic Applications

scholarly journals Effects of Interfacial Passivation on the Electrical Performance, Stability, and Contact Properties of Solution Process Based ZnO Thin Film Transistors

Materials ◽  
2018 ◽  
Vol 11 (9) ◽  
pp. 1761 ◽  
Author(s):  
Liaojun Wan ◽  
Fuchao He ◽  
Yu Qin ◽  
Zhenhua Lin ◽  
Jie Su ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Solution Process ◽  
Electrical Performance ◽  
Zno Films ◽  
Zno Thin Film ◽  
Chlorobenzoic Acid ◽  
Interfacial Modification ◽  
Temperature Solution

This paper reports low temperature solution processed ZnO thin film transistors (TFTs), and the effects of interfacial passivation of a 4-chlorobenzoic acid (PCBA) layer on device performance. It was found that the ZnO TFTs with PCBA interfacial modification layers exhibited a higher electron mobility of 4.50 cm2 V−1 s−1 compared to the pristine ZnO TFTs with a charge carrier mobility of 2.70 cm2 V−1 s−1. Moreover, the ZnO TFTs with interfacial modification layers could significantly improve device shelf-life stability and bias stress stability compared to the pristine ZnO TFTs. Most importantly, interfacial modification layers could also decrease the contact potential barrier between the source/drain electrodes and the ZnO films when using high work-function metals such as Ag and Au. These results indicate that high performance TFTs can be obtained with a low temperature solution process with interfacial modification layers, which strongly implies further potential for their applications.

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