Solar blind avalanche photodetector based on the cation exchange growth of β-Ga2O3/SnO2 bilayer heterostructure thin film

2016 ◽  
Vol 152 ◽  
pp. 65-72 ◽  
Author(s):  
Waleed E. Mahmoud
Keyword(s):  
Thin Film ◽  
Cation Exchange ◽  
Solar Blind

High-Responsivity Solar-Blind Photodetector Based on $ \hbox{Mg}_{0.46}\hbox{Zn}_{0.54}\hbox{O}$ Thin Film

2012 ◽  
Vol 33 (7) ◽  
pp. 1033-1035 ◽  
Author(s):  
Qinghong Zheng ◽  
Feng Huang ◽  
Jin Huang ◽  
Qichan Hu ◽  
Dagui Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
High Responsivity ◽  
Solar Blind

scholarly journals High-performance thermoelectric silver selenide thin films cation exchanged from a copper selenide template

2020 ◽  
Vol 2 (1) ◽  
pp. 368-376 ◽  
Author(s):  
Nan Chen ◽  
Michael R. Scimeca ◽  
Shlok J. Paul ◽  
Shihab B. Hafiz ◽  
Ze Yang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Cation Exchange ◽  
High Performance ◽  
Low Cost ◽  
Copper Selenide ◽  
Silver Selenide ◽  
Solution Processed

A high-performance n-type thermoelectric Ag2Se thin film via cation exchange using a low-cost solution processed Cu2Se template.

The Potential Realization of Solar-Blind Ultraviolet Detecting Using ZnO-Based Alloy Thin Film

2013 ◽  
Vol 652-654 ◽  
pp. 537-541 ◽  
Author(s):  
Xue Ran Deng ◽  
Hong Deng
Keyword(s):  
Thin Film ◽  
Optical Band Gap ◽  
Transparent Electrode ◽  
Alloy Film ◽  
Alloy Thin Film ◽  
Transmission Spectra ◽  
Uv Detector ◽  
Sem Image ◽  
Azo Thin Film ◽  
Solar Blind

A simple solar-blind ultraviolet (UV) detector was fabricated by using Al0.3Zn0.7O alloy thin films as photocathode and ZnO:Al (AZO) thin film as transparent electrode. Transmission spectra of Al0.3Zn0.7O alloy thin film was characterized through spectrometer and result showed significant enlargement of its optical band gap value. This alloy film only absorbed illumination whose wavelength is below 280nm, and the UV on/off characteristics of this detector presented very clearly. Scanning electron microscope (SEM) image revealed fine structure of both layers and the interface of these two layers performed clear and uniform.

Solar-Blind 4H-SiC Avalanche Photodiodes

2009 ◽  
Vol 615-617 ◽  
pp. 873-876 ◽  
Author(s):  
Stanislav I. Soloviev ◽  
Alexey V. Vert ◽  
Jody Fronheiser ◽  
Peter M. Sandvik
Keyword(s):  
Thin Film ◽  
Avalanche Photodiodes ◽  
Optical Filter ◽  
Leakage Currents ◽  
Avalanche Photodetectors ◽  
Rejection Ratio ◽  
Solar Blind ◽  
Order Of Magnitude

In this work, solar-blind UV 4H-SiC avalanche photodetectors were fabricated and tested in linear and Geiger modes. APDs with both PIN and separate absorption and multiplication (SAM) structures were investigated. PIN structures demonstrated higher quantum efficiencies while the SAM structure exhibit lower leakage currents. Deposition of a thin film optical filter on top of the devices was used to provide a high photon rejection ratio of (Stas add value here). However, an external filter showed a better photon rejection ratio compared to the deposited one by about one order of magnitude.

Photoconductive gain in solar-blind ultraviolet photodetector based on Mg0.52Zn0.48O thin film

2011 ◽  
Vol 99 (24) ◽  
pp. 242105 ◽  
Author(s):  
Shun Han ◽  
Zhenzhong Zhang ◽  
Jiying Zhang ◽  
Likun Wang ◽  
Jian Zheng ◽  
...  
Keyword(s):  
Thin Film ◽  
Ultraviolet Photodetector ◽  
Photoconductive Gain ◽  
Solar Blind
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