Photoconductive gain in solar-blind ultraviolet photodetector based on Mg0.52Zn0.48O thin film

2011 ◽  
Vol 99 (24) ◽  
pp. 242105 ◽  
Author(s):  
Shun Han ◽  
Zhenzhong Zhang ◽  
Jiying Zhang ◽  
Likun Wang ◽  
Jian Zheng ◽  
...  
2017 ◽  
Vol 209 ◽  
pp. 558-561 ◽  
Author(s):  
Y.P. Qian ◽  
D.Y. Guo ◽  
X.L. Chu ◽  
H.Z. Shi ◽  
W.K. Zhu ◽  
...  

2014 ◽  
Vol 105 (1) ◽  
pp. 011117 ◽  
Author(s):  
M. M. Fan ◽  
K. W. Liu ◽  
Z. Z. Zhang ◽  
B. H. Li ◽  
X. Chen ◽  
...  

2012 ◽  
Vol 33 (7) ◽  
pp. 1033-1035 ◽  
Author(s):  
Qinghong Zheng ◽  
Feng Huang ◽  
Jin Huang ◽  
Qichan Hu ◽  
Dagui Chen ◽  
...  

2021 ◽  
Vol 32 (3) ◽  
pp. 2696-2703
Author(s):  
Zexuan Guo ◽  
Man Zhao ◽  
Dayong Jiang ◽  
Jing Zhang ◽  
Chunyan Xu

2015 ◽  
Vol 3 (3) ◽  
pp. 596-600 ◽  
Author(s):  
Jiangxin Wang ◽  
Chaoyi Yan ◽  
Meng-Fang Lin ◽  
Kazuhito Tsukagoshi ◽  
Pooi See Lee

An all-NW ultraviolet photodetector with high photoresponse and improved switching time was fabricated by a solution assembly method.


Nanophotonics ◽  
2018 ◽  
Vol 7 (9) ◽  
pp. 1557-1562 ◽  
Author(s):  
Tao He ◽  
Yukun Zhao ◽  
Xiaodong Zhang ◽  
Wenkui Lin ◽  
Kai Fu ◽  
...  

AbstractIn this paper, a solar-blind ultraviolet photodetector (PD) based on the graphene/vertical Ga2O3 nanowire array heterojunction was proposed and demonstrated. To the best of our knowledge, it is the first time that vertical Ga2O3 nanowire arrays have been realized. Ga2O3 nanowires were obtained by thermally oxidizing GaN nanowires grown by molecular beam epitaxy on n-doped Si substrate. Then, a monolayer graphene film was transferred to Ga2O3 nanowires to form the graphene/vertical Ga2O3 nanowire array heterojunction and transparent electrodes. The fabricated device exhibited a responsivity (R) of 0.185 A/W and rejection ratio (R258 nm/R365 nm) of 3×104 at the bias of −5 V. Moreover, the fast response times of this PD were 9 and 8 ms for the rise and decay times under 254 nm illumination, respectively, which are attributed to the unique properties of nanowire arrays and the graphene/vertical Ga2O3 nanowire array heterojunction structure.


2021 ◽  
Vol 42 (11) ◽  
pp. 1653-1660
Author(s):  
Qiu-ju FENG ◽  
◽  
Jin-zhu XIE ◽  
Zeng-jie DONG ◽  
Chong GAO ◽  
...  

2021 ◽  
Vol 123 ◽  
pp. 105532
Author(s):  
Xu Cao ◽  
Yanhui Xing ◽  
Jun Han ◽  
Junshuai Li ◽  
Tao He ◽  
...  

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