Improved evaluation of saturation currents and bulk lifetime in industrial Si solar cells by the quasi steady state photoconductance decay method

2016 ◽  
Vol 149 ◽  
pp. 258-265 ◽  
Author(s):  
Binhui Liu ◽  
Yifeng Chen ◽  
Yang Yang ◽  
Daming Chen ◽  
Zhiqiang Feng ◽  
...  
1989 ◽  
Vol 149 ◽  
Author(s):  
David Redfield ◽  
Richard H. Bube

ABSTRACTBy combining the steady-state and transient behaviors of a recently generalized analysis of the kinetics of metastable defects in good amorphous Si:H, it is shown that no treatment can remove all metastable defects. There is always a significant remnant that is proposed to be the observed built-in defects, which are then not a separate species, distinct from the metastable defects. This remnant is due to vibrational breaking of weak bonds in latent defect centers, and cannot be due to recombination of thermally excited carriers. If the stability can be improved by reducing the number of these latent defect centers, this will also reduce the density of built-in defects that control the initial efficiency. Furthermore, there are good reasons to believe that the source of these defects is extrinsic to a-Si:H, so that improvement in both properties may be achievable.


2011 ◽  
Vol 95 (7) ◽  
pp. 1979-1982 ◽  
Author(s):  
J.A. Giesecke ◽  
B. Michl ◽  
F. Schindler ◽  
M.C. Schubert ◽  
W. Warta

2008 ◽  
Vol 45 ◽  
pp. 161-176 ◽  
Author(s):  
Eduardo D. Sontag

This paper discusses a theoretical method for the “reverse engineering” of networks based solely on steady-state (and quasi-steady-state) data.


1981 ◽  
Vol 42 (C4) ◽  
pp. C4-1155-C4-1164 ◽  
Author(s):  
Y. Kuwano ◽  
M. Ohnishi
Keyword(s):  

Author(s):  
Vishal Mehta ◽  
Bhushan Sopori ◽  
Przemyslaw Rupnowski ◽  
Helio Moutinho ◽  
Aziz Shaikh ◽  
...  

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