Anti-reflective microcrystalline silicon oxide p-layer for thin-film silicon solar cells on ZnO

2012 ◽  
Vol 105 ◽  
pp. 187-191 ◽  
Author(s):  
Konrad Schwanitz ◽  
Stefan Klein ◽  
Tobias Stolley ◽  
Martin Rohde ◽  
Daniel Severin ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Silicon Oxide ◽  
Silicon Solar Cells ◽  
Microcrystalline Silicon ◽  
Thin Film Silicon

scholarly journals Mixed phase silicon oxide layers for thin-film silicon solar cells

2011 ◽  
Vol 1321 ◽  
Author(s):  
Peter Cuony ◽  
Duncan T.L. Alexander ◽  
Linus Löfgren ◽  
Michael Krumrey ◽  
Michael Marending ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Silicon Oxide ◽  
Nanocrystalline Silicon ◽  
Silicon Solar Cells ◽  
Microstructural Properties ◽  
Microcrystalline Silicon ◽  
Thin Film Silicon ◽  
Transmission Electron ◽  
Doped Silicon

ABSTRACTLower absorption, lower refractive index and tunable resistance are three advantages of doped silicon oxide containing nanocrystalline silicon grains (nc-SiOx) compared to doped microcrystalline silicon, for the use as p- and n-type layers in thin-film silicon solar cells. In this study we show how optical, electrical and microstructural properties of nc-SiOx layers depend on precursor gas ratios and we propose a growth model to explain the phase separation in such films into Si-rich and O-rich regions as visualized by energy-filtered transmission electron microscopy.

N-type Microcrystalline Silicon Oxide (μc-SiOx:H) Window Layers with Combined Anti-reflection Effects for n-i-p Thin Film Silicon Solar Cells

2010 ◽  
Vol 1245 ◽  
Author(s):  
Vladimir Smirnov ◽  
Wanjiao Boettler ◽  
Andreas Lambertz ◽  
Oleksandr Astakhov ◽  
Reinhard Carius ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Silicon Oxide ◽  
Window Layer ◽  
Silicon Solar Cells ◽  
Internal Electric Field ◽  
Microcrystalline Silicon ◽  
Side Window ◽  
Long Wavelength ◽  
Thin Film Silicon

AbstractWe will describe the development and application of n-type microcrystalline silicon oxide (μc-SiOx:H) alloys as window layers in thin film silicon solar cells with microcrystalline silicon (μc-Si:H) absorber layers. Cells are prepared in n–i–p deposition sequence with illumination through the n-side. The layers were deposited by radio-frequency plasma enhanced chemical vapour deposition (RF-PECVD) at 185°C substrate temperature, using a mixture of phosphine (PH3), silane (SiH4), carbon dioxide (CO2) and hydrogen (H2) gases, at CO2 flows varied between 0.5 and 2 sccm and different thickness. Films were characterised by dark conductivity measurements, Photothermal Deflection Spectroscopy (PDS) and Raman spectroscopy to evaluate optical band gap E04, refractive index n and crystallinity ICRS, respectively. The results were compared with the data of alternative optimised window layers, such as n-type μc-Si:H and silicon carbide (μc-SiC:H) films. Also solar cells with conventional illumination through the p-side window were investigated for comparison. Solar cells were prepared with μc-SiOx:H n-layers of varied compositions and characterised by current-voltage (J-V) measurements under AM 1.5 illumination (and also under modified AM 1.5 illumination with red (OG590) and blue (OG7) filters) and reflectance measurements. The effects of the μc-SiOx n-layer composition and thickness on the performance of n-i-p cells were investigated and correlated with the optical, electrical and structural properties of the μc-SiOx:H n-layers. The results indicate that n-type μc-SiOx:H provides a sufficient combination of conductivity (up to 0.1 S/cm) and crystallinity (ICRS up to 30%) to function well as a doped layer for the internal electric field and the carrier transport and as a nucleation layer for the growth of the μc-Si:H i-layer. As a window layer, it also results in an enhanced spectral response, particularly in the long wavelength part of the spectrum of the solar cells, in comparison with the cells containing alternative window layers. An improved short circuit current density (Jsc) can be attributed to the wide optical gap E04 (around 2.3 eV) in the μc-SiOx:H window layers and reduced reflection in the long wavelength region of the spectrum. A minimum total reflectance of only 6% at 570nm wavelength was achieved with such μc-SiOx:H window layers. Using optimised n-type μc-SiOx:H as a window layer, an efficiency of 8.0% for 1cm2 cell area was achieved with 1 μm thick μc-Si:H absorber layer and Ag back reflector.

Silicontetrachloride based microcrystalline silicon for application in thin film silicon solar cells

2004 ◽  
Vol 451-452 ◽  
pp. 280-284 ◽  
Author(s):  
M. Lejeune ◽  
W. Beyer ◽  
R. Carius ◽  
J. Müller ◽  
B. Rech
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Silicon Solar Cells ◽  
Microcrystalline Silicon ◽  
Thin Film Silicon

Innovative Device Architecture for High Efficiency Thin Film Silicon Solar Cells

2012 ◽  
Vol 1426 ◽  
pp. 131-135
Author(s):  
Mathieu Boccard ◽  
Matthieu Despeisse ◽  
Christophe Ballif
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
High Efficiency ◽  
Silicon Oxide ◽  
Light Trapping ◽  
Electrical Circuit ◽  
Silicon Solar Cells ◽  
Device Architecture ◽  
Thin Film Silicon ◽  
Photovoltaic Technologies

ABSTRACTThe challenge for all photovoltaic technologies is to maximize light absorption, convert photons with minimal losses to electrical charges and efficiently extract them towards the electrical circuit. For thin film silicon solar cells, a compromise must be found as light trapping is usually performed through textured interfaces, that are detrimental to the subsequent growth of dense and high quality silicon layers. We introduce here the concept of smoothening intermediate reflecting layers (IRL), enabling to combine high currents and good electrical quality in Micromorph devices in the superstrate configuration. After exposing the motivation for such structures, we validate the concept by showing a VOCenhancement when employing a polished silicon-oxide-based IRL. Shunting issues and additional reflection losses are pointed out with such technique, highlighting the need to develop alternative techniques for an efficient morphology adaptation before the microcrystalline silicon cell growth.

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