Improvement of CdSe/P3HT bulk hetero-junction solar cell performance due to ligand exchange from TOPO to pyridine

2011 ◽  
Vol 95 (11) ◽  
pp. 3009-3014 ◽  
Author(s):  
Nguyen Tam Nguyen Truong ◽  
Woo Kyoung Kim ◽  
Umme Farva ◽  
Xiang Dong Luo ◽  
Chinho Park
Keyword(s):  
Solar Cell ◽  
Ligand Exchange ◽  
Cell Performance ◽  
Solar Cell Performance ◽  
Junction Solar Cell

Controlling the morphology of the active layer by using additives and its effect on bulk hetero-junction solar cell performance

2015 ◽  
Vol 33 (2) ◽  
pp. 678-682 ◽  
Author(s):  
Viet Hau Thanh Pham ◽  
Nguyen Tam Nguyen Truong ◽  
Thanh Kieu Trinh ◽  
Sang Hoon Lee ◽  
Chinho Park
Keyword(s):  
Solar Cell ◽  
Active Layer ◽  
Cell Performance ◽  
Solar Cell Performance ◽  
Junction Solar Cell

Correlation of Hydrogen Dilution Profiling to Material Structure and Device Performance of Hydrogenated Nanocrystalline Silicon Solar Cells

2008 ◽  
Vol 1066 ◽  
Author(s):  
Baojie Yan ◽  
Guozhen Yue ◽  
Yanfa Yan ◽  
Chun-Sheng Jiang ◽  
Charles W. Teplin ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Cell Structure ◽  
Nanocrystalline Silicon ◽  
Cell Performance ◽  
Solar Cell Performance ◽  
Seeding Layer ◽  
Single Junction ◽  
Junction Solar Cell ◽  
Hydrogen Dilution

ABSTRACTWe present a systematic study on the correlation of hydrogen dilution profiles to structural properties materials and solar cell performance in nc-Si:H solar cells. We deposited nc-Si:H single-junction solar cells using a modified very high frequency (VHF) glow discharge technique on stainless steel substrates with various profiles of hydrogen dilution in the gas mixture during deposition. The material properties were characterized using Raman spectroscopy, X-TEM, AFM, and C-AFM. The solar cell performance correlates well with the material structures. Three major conclusions are made based on the characterization results. First, the optimized nc-Si:H material does not show an incubation layer, indicating that the seeding layer is well optimized and works as per design. Second, the nanocrystalline evolution is well controlled by hydrogen dilution profiling in which the hydrogen dilution ratio is dynamically reduced during the intrinsic layer deposition. Third, the best nc-Si:H single-junction solar cell was made using a proper hydrogen dilution profile, which caused a nanocrystalline distribution close to uniform throughout the thickness, but with a slightly inverse nanocrystalline evolution. We have used the optimized hydrogen dilution profiling and improved the nc-Si:H solar cell performance significantly. As a result, we have achieved an initial active-area cell efficiency of 9.2% with a nc-Si:H single-junction structure, and 15.4% with an a-Si:H/a-SiGe:H/nc-Si:H triple-junction solar cell structure.

Experimental and Theoretical Comparable Study of Pure and Zinc Porphyrin Surface Modified ZnO Nanorod Arrays for Hybrid Solar Cell Applications

2020 ◽  
pp. 114-119
Keyword(s):  
Solar Cell ◽  
Electrochemical Impedance ◽  
Hybrid Solar Cell ◽  
Cell Performance ◽  
Solar Cell Performance ◽  
Solar Cell Efficiency ◽  
Cell Efficiency ◽  
Annealing Effects ◽  
Vertically Aligned ◽  
Surface Modified

Experimental and theoretical study Porphyrin-grafted ZnO nanowire arrays were investigated for organic/inorganic hybrid solar cell applications. Two types of porphyrin – Tetra (4-carboxyphenyle) TCPP and meso-Tetraphenylporphine (Zinc-TPP)were used to modify the nanowire surfaces. The vertically aligned nanowires with porphyrin modifications were embedded in graphene-enriched poly (3-hexylthiophene) [G-P3HT] for p-n junction nanowire solar cells. Surface grafting of ZnO nanowires was found to improve the solar cell efficiency. There are different effect for the two types of porphyrin as results of Zn existing. Annealing effects on the solar cell performance were investigated by heating the devices up to 225 °C in air. It was found that the cell performance was significantly degraded after annealing. The degradation was attributed to the polymer structural change at high temperature as evidenced by electrochemical impedance spectroscopy measurements.

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