Analytical model for the photocurrent of solar cells based on graded band-gap CdZnTe thin films

2011 ◽  
Vol 95 (10) ◽  
pp. 2837-2841 ◽  
Author(s):  
Arturo Morales-Acevedo
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Band Gap ◽  
Analytical Model ◽  
Graded Band Gap

Studies on the graded band-gap copper indium di-selenide thin film solar cells prepared by electrochemical route

2019 ◽  
Vol 466 ◽  
pp. 358-366 ◽  
Author(s):  
Ashwini B. Rohom ◽  
Priyanka U. Londhe ◽  
Jeong In Han ◽  
Nandu B. Chaure
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Band Gap ◽  
Thin Film Solar Cells ◽  
Copper Indium ◽  
Graded Band Gap ◽  
Selenide Thin Film

Role of Surface Band Gap Widening in Cu(In, Ga)(Se, S)2 Thin-Films for the Photovoltaic Performance of ZnO/CdS/Cu(In, Ga)(Se, S)2 Heterojunction Solar Cells

2003 ◽  
Vol 763 ◽  
Author(s):  
U. Rau ◽  
M. Turcu
Keyword(s):  
Thin Films ◽  
Surface Layer ◽  
Solar Cells ◽  
Fermi Level ◽  
Band Gap ◽  
Photovoltaic Performance ◽  
Heterojunction Solar Cells ◽  
Fermi Level Pinning ◽  
Device Efficiency

AbstractNumerical simulations are used to investigate the role of the Cu-poor surface defect layer on Cu(In, Ga)Se2 thin-films for the photovoltaic performance of ZnO/CdS/Cu(In, Ga)Se2 heterojunction solar cells. We model the surface layer either as a material which is n-type doped, or as a material which is type-inverted due to Fermi-level pinning by donor-like defects at the interface with CdS. We further assume a band gap widening of this layer with respect to the Cu(In, Ga)Se2 bulk. This feature turns out to represent the key quality of the Cu(In, Ga)Se2 surface as it prevents recombination at the absorber/CdS buffer interface. Whether the type inversion results from n-type doping or from Fermi-level pinning is only of minor importance as long as the surface layer does not imply a too large number of excess defects in its bulk or at its interface with the normal absorber. With increasing number of those defects an n-type layer proofs to be less sensitive to material deterioration when compared to the type-inversion by Fermi-level pinning. For wide gap chalcopyrite solar cells the internal valence band offset between the surface layer and the chalcopyrite appears equally vital for the device efficiency. However, the unfavorable band-offsets of the ZnO/CdS/Cu(In, Ga)Se2 heterojunction limit the device efficiency because of the deterioration of the fill factor.

CIGS-BASED THIN FILM SOLAR CELLS WITH GRADED BAND GAP AND NANOSTRUCTURED CONTACTS

2015 ◽  
pp. 609-612
Author(s):  
V. F. GREMENOK ◽  
S. A. BASHKIROV ◽  
I. N. TSYRELCHUK ◽  
V. B. ZALESSKI ◽  
S. H. CHAI ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Band Gap ◽  
Thin Film Solar Cells ◽  
Graded Band Gap

Cd-Free Zn(O,S) as Alternative Buffer Layer for Chalcogenide and Kesterite Based Thin Films Solar Cells: A Review

2020 ◽  
Vol 20 (6) ◽  
pp. 3622-3635 ◽  
Author(s):  
Kuldeep S. Gour ◽  
Rahul Parmar ◽  
Rahul Kumar ◽  
Vidya N. Singh
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cells ◽  
Band Gap ◽  
Buffer Layer ◽  
Low Cost ◽  
Incident Light ◽  
High Resistivity ◽  
Short Wavelength Range ◽  
Absorber Material

Cd is categorized as a toxic material with restricted use in electronics as there are inherent problems of treating waste and convincing consumers that it is properly sealed inside without any threat of precarious leaks. Apart from toxicity, band-gap of CdS is about 2.40–2.50 eV, which results significant photon loss in short-wavelength range which restricts the overall performance of solar cells. Thin film of Zn(O,S) is a favorable contender to substitute CdS thin film as buffer layer for CuInGaSe2 (CIGS), CuInGa(S,Se)2 (CIGSSe), Cu2ZnSn(S,Se)4 (CZTSSe) Cu2ZnSnSe4 (CZTSe), Cu2ZnSnS4 (CZTS) thin film absorber material based photovoltaic due to it made from earth abundant, low cost, non-toxic materials and its ability to improve the efficiency of chalcogenide and kesterite based photovoltaic due to wider band-gap which results in reduction of absorption loss compared to CdS. In this review, apart from mentioning various deposition technique for Zn(O,S) thin films, changes in various properties i.e., optical, morphological, and opto-electrical properties of Zn(O,S) thin film deposited using various methods utilized for fabricating solar cell based on CIGS, CIGSSe, CZTS, CZTSe and CZTSSe thin films, the material has been evaluated for all the properties of buffer layer (high transparency for incident light, good conduction band lineup with absorber material, low interface recombination, high resistivity and good device stability).

Fabrication of Graded Band Gap Amorphous Carbon Nitride Thin Films for New Generation Photovoltaic Applications

2012 ◽  
Vol 51 (10S) ◽  
pp. 10NE26 ◽  
Author(s):  
Chihiro Iwasaki ◽  
Masami Aono ◽  
Naoyuki Tamura ◽  
Nobuaki Kitazawa ◽  
Yoshihisa Watanabe
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Amorphous Carbon ◽  
Carbon Nitride ◽  
Photovoltaic Applications ◽  
Amorphous Carbon Nitride ◽  
Graded Band Gap ◽  
New Generation

scholarly journals Effects of Sulfurization Temperature on Properties of CZTS Films by Vacuum Evaporation and Sulfurization Method

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
Jie Zhang ◽  
Bo Long ◽  
Shuying Cheng ◽  
Weibo Zhang
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Band Gap ◽  
Crystallite Size ◽  
Low Cost ◽  
Band Gap Energy ◽  
Vacuum Evaporation ◽  
Glass Substrates ◽  
Sulfurization Temperature ◽  
Czts Thin Films

Copper zinc tin sulfur (CZTS) thin films have been extensively studied in recent years for their advantages of low cost, high absorption coefficient (≥104 cm−1), appropriate band gap (~1.5 eV), and nontoxicity. CZTS thin films are promising materials of solar cells like copper indium gallium selenide (CIGS). In this work, CZTS thin films were prepared on glass substrates by vacuum evaporation and sulfurization method. Sn/Cu/ZnS (CZT) precursors were deposited by thermal evaporation and then sulfurized in N2+ H2S atmosphere at temperatures of 360–560°C to produce polycrystalline CZTS thin films. It is found that there are some impurity phases in the thin films with the sulfurization temperature less than 500°C, and the crystallite size of CZTS is quite small. With the further increase of the sulfurization temperature, the obtained thin films exhibit preferred (112) orientation with larger crystallite size and higher density. When the sulfurization temperature is 500°C, the band gap energy, resistivity, carrier concentration, and mobility of the CZTS thin films are 1.49 eV, 9.37 Ω · cm,1.714×1017 cm−3, and 3.89 cm2/(V · s), respectively. Therefore, the prepared CZTS thin films are suitable for absorbers of solar cells.

All solution processable graded CIGS solar cells fabricated using electrophoretic deposition

RSC Advances ◽  
2016 ◽  
Vol 6 (14) ◽  
pp. 11903-11910 ◽  
Author(s):  
Mohammad Reza Golobostanfard ◽  
Hossein Abdizadeh
Keyword(s):  
Solar Cells ◽  
Band Gap ◽  
Electrophoretic Deposition ◽  
Synthesis Method ◽  
Solution Processable ◽  
Cigs Solar Cells ◽  
Graded Band Gap

Graded band gap chalcopyrite solar cells are fabricated based on an all solution processable synthesis method with the aid of electrophoretic deposition and a superstrate structure.

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