Wide range tuning of electrical conductivity of RF sputtered CdO thin films through oxygen partial pressure variation

2008 ◽  
Vol 92 (9) ◽  
pp. 1077-1080 ◽  
Author(s):  
B. Saha ◽  
R. Thapa ◽  
K.K. Chattopadhyay
2007 ◽  
Vol 336-338 ◽  
pp. 730-734 ◽  
Author(s):  
Hiroshi Masumoto ◽  
Akihiko Ito ◽  
Y. Kaneko ◽  
Takashi Goto

BaRuO3(BRO) and BaIrO3(BIO) thin films were prepared by laser ablation, and the effects of preparation conditions on the structure, morphology and electrical conductivity were investigated. BRO thin films deposited at oxygen partial pressure (PO2) = 13 Pa and substrate temperature (Tsub) < 573 K were amorphous. At Tsub = 573 K, the rhombohedral BRO thin films with (110) orientation were obtained. BRO thin films prepared at Tsub = 773 K and PO2= 13 Pa exhibited the resistivity of 5x10-6 m and showed metallic conduction. BIO thin films deposited at PO2= 40 Pa and Tsub < 623 K were amorphous. Tsub > 623 K, the BIO thin films crystallized into a 6H structure were obtained. The resistivity of the BIO films at PO2= 40 Pa decreased from 1.4x10-2 to 4x10-4 m with decreasing Tsub from 1073 to 573 K.


2006 ◽  
Vol 89 (9) ◽  
pp. 2845-2852 ◽  
Author(s):  
Christian Ohly ◽  
Susanne Hoffmann-Eifert ◽  
Xin Guo ◽  
Jürgen Schubert ◽  
Rainer Waser

2008 ◽  
Vol 254 (18) ◽  
pp. 5868-5873 ◽  
Author(s):  
R.K. Gupta ◽  
K. Ghosh ◽  
R. Patel ◽  
S.R. Mishra ◽  
P.K. Kahol

1994 ◽  
Vol 369 ◽  
Author(s):  
Igor Kosacki ◽  
Harry L. Tuller

The results of electrical conductivity measurements on Nb, W, and Mn-doped Gd2Ti2O7 are presented. A correlation between electrical conductivity, the oxygen partial pressure and type of dopants has been obtained. The source of the different PO2 dependence for Mn-doped material is discussed.


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