scholarly journals Complexing agent effect on the stoichiometric ratio of the electrochemically prepared CuInSe2 thin films

2007 ◽  
Vol 91 (20) ◽  
pp. 1922-1926 ◽  
Author(s):  
S. Beyhan ◽  
S. Suzer ◽  
F. Kadırgan
Keyword(s):  
Thin Films ◽  
Complexing Agent ◽  
Stoichiometric Ratio

Synthesis and characterisation of ZnS thin films obtained without complexing agent by the chemical bath technique

2021 ◽  
pp. 1-13
Author(s):  
I. J. González-Chan ◽  
A. Pat-Herrera ◽  
A. I. Trejo-Ramos ◽  
A. I. Oliva
Keyword(s):  
Thin Films ◽  
Complexing Agent

Effect of complexing agent TEA: The structural, morphological, topographical and optical properties of FexSx nano thin films deposited by SILAR technique

2014 ◽  
Vol 288 ◽  
pp. 76-82 ◽  
Author(s):  
K. Manikandan ◽  
P. Mani ◽  
C. Surendra Dilip ◽  
S. Valli ◽  
P. Fermi Hilbert Inbaraj ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Complexing Agent ◽  
Silar Technique

Influence of Substrate Temperature on Structural and Optical Properties of Co-Evaporated Cu2SnS3/ITO Thin Films

2022 ◽  
Vol 1048 ◽  
pp. 189-197
Author(s):  
Tippasani Srinivasa Reddy ◽  
M.C. Santhosh Kumar
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Substrate Temperature ◽  
Indium Tin Oxide ◽  
Nir Spectroscopy ◽  
Stoichiometric Ratio ◽  
Tin Sulfide ◽  
Structural And Optical Properties ◽  
Average Grain Size ◽  
Deposited Films

In this study report the structural and optical properties of Copper Tin Sulfide (Cu2SnS3) thin films on indium tin oxide (ITO) substrate using co-evaporation technique. High purity of copper, tin and sulfur were taken as source materials to deposit Cu2SnS3 (CTS) thin films at different substrate temperatures (200-350 °C). Further, the effect of different substrate temperature on the crystallographic, morphological and optical properties of CTS thin films was investigated. The deposited CTS thin films shows tetragonal phase with preferential orientation along (112) plane confirmed by X-ray diffraction. Micro-Raman studies reveled the formation of CTS thin films. The surface morphology, average grain size and rms values of the deposited films are examined by Scanning electron spectroscopy (SEM) and Atomic Force Microscopy (AFM). The Energy dispersive spectroscopy (EDS) shows the presence of copper, tin and sulfur with a nearly stoichiometric ratio. The optical band gap (1.76-1.63 eV) and absorption coefficient (~105 cm-1) of the films was calculated by using UV-Vis-NIR spectroscopy. The values of refractive index, extinction coefficient and permittivity of the deposited films were calculated from the optical transmittance data.

Effect of concentration of trisodium citrate complexing agent on spray-synthesized ZnS thin films

2020 ◽  
Author(s):  
P.O. Offor ◽  
S.N. Ude ◽  
G.M. Whyte ◽  
F.U. Otung ◽  
I.G. Madiba ◽  
...  
Keyword(s):  
Thin Films ◽  
Trisodium Citrate ◽  
Complexing Agent

scholarly journals Optimization of Chemical Bath Deposited Mercury Chromium Sulphide Thin Films on Glass Substrate

2013 ◽  
Vol 2013 ◽  
pp. 1-4
Author(s):  
H. B. Patil ◽  
S. V. Borse
Keyword(s):  
Thin Films ◽  
Glass Substrate ◽  
Deposition Time ◽  
Growth Parameters ◽  
Complexing Agent ◽  
X Ray Diffraction ◽  
X Ray ◽  
Edax Analysis ◽  
Cubic Structure ◽  
Semiconducting Thin Films

Semiconducting thin films of ternary () have been deposited on glass substrate by the simple and economical chemical bath deposition method. We report the deposition and optimization of the solution growth parameters such as temperature, complexing agent, thiourea, and deposition time that maximizes the thickness of the deposited thin film. The X-ray diffraction deposited thin films having cubic structure. The thin films were uniform and adherent to substrate. The composition was found homogeneous and stoichiometric by EDAX analysis.

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