ChemInform Abstract: Structural, Optical and Electric Properties of Nanocrystalline MgSe Thin Films Deposited by Chemical Route Using Triethanolamine as a Complexing Agent.

ChemInform ◽  
2013 ◽  
Vol 44 (44) ◽  
pp. no-no
Author(s):  
Ashok U. Ubale ◽  
Y. S. Sakhare ◽  
S. G. Ibrahim ◽  
M. R. Belkhedkar
2019 ◽  
Vol 233 (8) ◽  
pp. 1183-1200 ◽  
Author(s):  
V. L. Patil ◽  
S. A. Vanalakar ◽  
S. A. Vhanalakar ◽  
A. S. Kamble ◽  
T. D. Dongale ◽  
...  

Abstract In the present study, we have deposited hierarchical flower-like microstructured zinc oxide (ZnO) thin films directly on a glass substrate by using the simplistic aqueous chemical route for different concentrations of triethanolamine (TEA) which acted like a complexing agent. The as-synthesized ZnO thin films were subsequently annealed at 300 °C and are characterized with characterization techniques such as X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), photoluminescence (PL), and electrical resistivity. The hexagonal wurtzite crystal structure of as-synthesized ZnO thin films was confirmed by their XRD patterns and the well-resolved ZnO flowers-like morphology was revealed from the FESEM micrographs. From FESEM images it can be seen that the ZnO flower is composed of dozens of nanorods originating from the same core in a symmetric fashion with an average diameter of around 180-300 nm. The flower-like morphology was obtained at 0.3 M TEA concentration. Due to its hierarchical structure, the deposited ZnO thin films were employed for multiple applications such as gas sensing and anti-microbial activity. The ZnO thin films with micro-flowers like morphology showed the maximum gas sensor sensitivity ∼64.50 at 150 °C for 100 ppm of NO2 gas. Moreover, the bacteria were completely destroyed in the presence of as-deposited ZnO thin films.


2015 ◽  
Vol 764-765 ◽  
pp. 138-142 ◽  
Author(s):  
Fa Ta Tsai ◽  
Hsi Ting Hou ◽  
Ching Kong Chao ◽  
Rwei Ching Chang

This work characterizes the mechanical and opto-electric properties of Aluminum-doped zinc oxide (AZO) thin films deposited by atomic layer deposition (ALD), where various depositing temperature, 100, 125, 150, 175, and 200 °C are considered. The transmittance, microstructure, electric resistivity, adhesion, hardness, and Young’s modulus of the deposited thin films are tested by using spectrophotometer, X-ray diffraction, Hall effect analyzer, micro scratch, and nanoindentation, respectively. The results show that the AZO thin film deposited at 200 °C behaves the best electric properties, where its resistance, Carrier Concentration and mobility reach 4.3×10-4 Ωcm, 2.4×1020 cm-3, and 60.4 cm2V-1s-1, respectively. Furthermore, microstructure of the AZO films deposited by ALD is much better than those deposited by sputtering.


2021 ◽  
pp. 1-13
Author(s):  
I. J. González-Chan ◽  
A. Pat-Herrera ◽  
A. I. Trejo-Ramos ◽  
A. I. Oliva
Keyword(s):  

2015 ◽  
Vol 14 (04) ◽  
pp. 1550011 ◽  
Author(s):  
A. Sharma ◽  
M. Tomar ◽  
V. Gupta ◽  
A. Badola ◽  
N. Goswami

In this paper gas sensing properties of 0.5–3% polyaniline (PAni) doped SnO 2 thin films sensors prepared by chemical route have been studied towards the trace level detection of NO 2 gas. The structural, optical and surface morphological properties of the PAni doped SnO 2 thin films were investigated by performing X-ray diffraction (XRD), Transmission electron microscopy (TEM) and Raman spectroscopy measurements. A good correlation has been identified between the microstructural and gas sensing properties of these prepared sensors. Out of these films, 1% PAni doped SnO 2 sensor showed high sensitivity towards NO 2 gas along with a sensitivity of 3.01 × 102 at 40°C for 10 ppm of gas. On exposure to NO 2 gas, resistance of all sensors increased to a large extent, even greater than three orders of magnitude. These changes in resistance upon removal of NO 2 gas are found to be reversible in nature and the prepared composite film sensors showed good sensitivity with relatively faster response/recovery speeds.


2000 ◽  
Vol 45 (3-4) ◽  
pp. 143-148 ◽  
Author(s):  
A Shutou ◽  
T Matsui ◽  
H Tsuda ◽  
H Mabuchi ◽  
K Morii

2003 ◽  
Vol 293 (1) ◽  
pp. 135-143
Author(s):  
M. Pereira ◽  
I. Boerasu ◽  
M. J. M. Gomes ◽  
B. Watts ◽  
F. Leccabue

Sign in / Sign up

Export Citation Format

Share Document