Crystalline silicon surface passivation by amorphous silicon carbide films

2007 ◽  
Vol 91 (2-3) ◽  
pp. 174-179 ◽  
Author(s):  
M. Vetter ◽  
I. Martín ◽  
R. Ferre ◽  
M. Garín ◽  
R. Alcubilla
2011 ◽  
Vol 99 (20) ◽  
pp. 203503 ◽  
Author(s):  
Jan-Willem A. Schüttauf ◽  
Karine H. M. van der Werf ◽  
Inge M. Kielen ◽  
Wilfried G. J. H. M. van Sark ◽  
Jatindra K. Rath ◽  
...  

2011 ◽  
Vol 98 (15) ◽  
pp. 153514 ◽  
Author(s):  
Jan-Willem A. Schüttauf ◽  
Karine H. M. van der Werf ◽  
Inge M. Kielen ◽  
Wilfried G. J. H. M. van Sark ◽  
Jatindra K. Rath ◽  
...  

Author(s):  
S.N. Abolmasov ◽  
A.S. Abramov ◽  
A.V. Semenov ◽  
I.S. Shakhray ◽  
E.I. Terukov ◽  
...  

AbstractAttenuated total reflection Fourier transform infrared (ATR FTIR) spectroscopy and effective lifetime measurements have been used to characterize amorphous/crystalline silicon surface passivation in silicon heterojunction solar cells. The comparative studies show a strong link between microstructure factor R * and effective lifetime of amorphous silicon ( a -Si:H) passivation layers incorporating an interface buffer layer, which prevents the epitaxial growth. It is demonstrated that thin a -Si:H films deposited on glass can be used as ATR substrates in this case. The obtained results show that a -Si:H films with R * close to 0.1 are required for manufacturing of high-efficiency (>23%) silicon heterojunction solar cells.


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