Effect of hydrogen plasma treatment on grain boundaries in polycrystalline silicon solar cell evaluated by laser-beam-induced current

2007 ◽  
Vol 91 (1) ◽  
pp. 1-5 ◽  
Author(s):  
Kensuke Nishioka ◽  
Toshiki Yagi ◽  
Yukiharu Uraoka ◽  
Takashi Fuyuki
Keyword(s):  
Solar Cell ◽  
Laser Beam ◽  
Plasma Treatment ◽  
Grain Boundaries ◽  
Polycrystalline Silicon ◽  
Silicon Solar Cell ◽  
Hydrogen Plasma ◽  
Induced Current

EBIC Investigation of the Influence of Hydrogen Passivation on Thin-Film Polycrystalline Silicon Solar Cells Obtained by Aluminium Induced Crystallization and Epitaxy

2009 ◽  
Vol 156-158 ◽  
pp. 413-418 ◽  
Author(s):  
Dries Van Gestel ◽  
Ivan Gordon ◽  
Jef Poortmans
Keyword(s):  
Thin Film ◽  
Grain Size ◽  
Solar Cell ◽  
Grain Boundaries ◽  
Polycrystalline Silicon ◽  
Hydrogen Plasma ◽  
Before And After ◽  
Plasma Passivation ◽  
Conversion Efficiencies ◽  
Induced Crystallization

The relatively new “thin-film polycrystalline-silicon (pc-Si) (grain size of 0.1-100 µm) solar cell on foreign substrate” technology aims at low-cost devices with energy conversion efficiencies above 12 %. A very promising technique to obtain thin pc-Si layers is aluminum-induced crystallization (AIC). Solar cell absorber layers can be made by epitaxial thickening of these AIC seed layers. So far, we have reached energy conversion efficiencies of up to 8% with this approach. In contrast to what is expected a performance independent of the grain size is found which is explained by the presence of intragrain defects. In this paper the electrical activity of both the intragrain defects as well as the grain boundaries is investigated with electron beam induced current (EBIC) measurements before and after hydrogen plasma passivation. Metal-insulator-semiconductor contacts were used as collecting junction to eliminate the interference of the junction shape with the EBIC measurement as found when diffused emitters where used. It is shown that both grain boundaries and intragrain defects are electrically active before and after hydrogen plasma passivation. Finally we argue that Leff,mono, the diffusion length inside the grains, is probably much closer to 1µm in our layers than equal to 100µm as often expected in the literature.

Influence of ultrathin gahnite anti-reflection coating on the power conversion efficiency of polycrystalline silicon solar cell

2019 ◽  
Vol 31 (3) ◽  
pp. 2308-2319 ◽  
Author(s):  
Gobinath Velu Kaliyannan ◽  
Senthil Velmurugan Palanisamy ◽  
Rajasekar Rathanasamy ◽  
Manivasakan Palanisamy ◽  
Sathish Kumar Palaniappan ◽  
...  
Keyword(s):  
Solar Cell ◽  
Power Conversion Efficiency ◽  
Conversion Efficiency ◽  
Polycrystalline Silicon ◽  
Silicon Solar Cell ◽  
Power Conversion

Photoelectric efficiency enhancement of a polycrystalline silicon solar cell coated with an EVA film containing Eu3+ complex by addition of modified SiO2

RSC Advances ◽  
2016 ◽  
Vol 6 (111) ◽  
pp. 110409-110415 ◽  
Author(s):  
Jin Dong ◽  
Baoping Lin
Keyword(s):  
Solar Cell ◽  
Composite Film ◽  
Conversion Efficiency ◽  
Polycrystalline Silicon ◽  
Silicon Solar Cell ◽  
Photoelectric Conversion Efficiency ◽  
Efficiency Enhancement ◽  
Photoelectric Conversion

Modified SiO2 was doped into an EVA film containing a Eu3+ complex and the results show that the fluorescence of the EVA composite film increased, which helped to improve the photoelectric conversion efficiency of the solar cell.

Quantitative Defect Analysis on Solar Cells by Laser Beam Induced Current (LBIC) Measurements and 3D Network Simulations

2013 ◽  
Vol 1493 ◽  
pp. 195-200 ◽  
Author(s):  
Minh Nguyen ◽  
Andreas Schütt ◽  
Jürgen Carstensen ◽  
Helmut Föll
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Laser Beam ◽  
Equivalent Circuit Model ◽  
Adjacent Area ◽  
Local Defect ◽  
Current Response ◽  
Induced Current ◽  
Shunt Resistance ◽  
3D Network

ABSTRACTMeasurements with the CELLO (solar cell local characterization) technique in the LBIC (laser beam induced current) mode under dark conditions with various constant bias voltages are used to analyze the lateral distribution, and mean values, of photocurrent response maps. Local solar cell defects such as local shunts were found to have a characteristic bias voltage dependence: At negative and small positive voltages a local shunt resistance gives less current response than the adjacent area. Upon applying higher positive voltages, a transition of the mean value to lower current response and an inversion of the local defect characteristics are found. These results were modeled by a newly introduced three dimensional (3D) equivalent circuit model of a solar cell divided into subcells.Measurements and simulations of solar cells with various local defects show our method to be a new powerful tool for the quantitative analysis of local solar cell defects.

Advantages of MIS Processing on Passivated Polycrystalline Silicon

1981 ◽  
Vol 5 ◽  
Author(s):  
G. Rajeswaran ◽  
M. Thayer ◽  
V. J. Rao ◽  
W. A. Anderson
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Grain Boundary ◽  
Grain Boundaries ◽  
Polycrystalline Silicon ◽  
Hydrogen Plasma ◽  
Mis Structures

ABSTRACTWacker polycrystalline silicon shows enhanced grain boundary activity after a high temperature (950° C) anneal. It is possible to passivate this effect in a hydrogen plasma. The low temperature (600° C) processing of MIS technology does not activate grain boundaries or deteriorate a passivated specimen. Activated grain boundaries with MIS structures can be used to assess the character of recombination currents. It is concluded that MIS processing is advantageous for passivated polycrystalline silicon.

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