Quantitative Defect Analysis on Solar Cells by Laser Beam Induced Current (LBIC) Measurements and 3D Network Simulations

2013 ◽  
Vol 1493 ◽  
pp. 195-200 ◽  
Author(s):  
Minh Nguyen ◽  
Andreas Schütt ◽  
Jürgen Carstensen ◽  
Helmut Föll
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Laser Beam ◽  
Equivalent Circuit Model ◽  
Adjacent Area ◽  
Local Defect ◽  
Current Response ◽  
Induced Current ◽  
Shunt Resistance ◽  
3D Network

ABSTRACTMeasurements with the CELLO (solar cell local characterization) technique in the LBIC (laser beam induced current) mode under dark conditions with various constant bias voltages are used to analyze the lateral distribution, and mean values, of photocurrent response maps. Local solar cell defects such as local shunts were found to have a characteristic bias voltage dependence: At negative and small positive voltages a local shunt resistance gives less current response than the adjacent area. Upon applying higher positive voltages, a transition of the mean value to lower current response and an inversion of the local defect characteristics are found. These results were modeled by a newly introduced three dimensional (3D) equivalent circuit model of a solar cell divided into subcells.Measurements and simulations of solar cells with various local defects show our method to be a new powerful tool for the quantitative analysis of local solar cell defects.

Quantification of effective thermal conductivity in the annealing process of Cu2ZnSn(S,Se)4 solar cells with 9.7% efficiency fabricated by magnetron sputtering

2018 ◽  
Vol 2 (5) ◽  
pp. 999-1006 ◽  
Author(s):  
Woo-Lim Jeong ◽  
Jung-Hong Min ◽  
Hae-Sun Kim ◽  
Ji-Hun Kim ◽  
Jin-Hyeok Kim ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Solar Cells ◽  
Solar Cell ◽  
Magnetron Sputtering ◽  
Effective Thermal Conductivity ◽  
Fill Factor ◽  
Annealing Process ◽  
High Thermal Conductivity ◽  
Shunt Resistance

A CZTSSe solar cell fabricated using a graphite box designed with high thermal conductivity exhibited a high shunt resistance and a fill factor.

Evaluation of Annealing Effects on TiO2 Nanorod Arrays for Dye-Sensitized Solar Cells by Equivalent Circuit Analysis

2014 ◽  
Vol 609-610 ◽  
pp. 152-158 ◽  
Author(s):  
Mei Rong Sui ◽  
Xiu Quan Gu
Keyword(s):  
Solar Cells ◽  
Equivalent Circuit ◽  
Dye Sensitized Solar Cells ◽  
Equivalent Circuit Model ◽  
Photocurrent Density ◽  
Nanorod Arrays ◽  
Equivalent Circuit Analysis ◽  
Shunt Resistance ◽  
Dye Sensitized ◽  
Sensitized Solar Cells

TiO2 nanorod arrays (NRA) were synthesized via a facile hydrothermal method for preparing the dye-sensitized solar cells (DSSC). It was found that a post-thermal treatment facilitated enhancing the cell efficiency. The cells containing NRs underwent 500 °C annealing exhibited much higher efficiency than those un-sintered ones. Further, the internal resistance analysis was carried out to reveal the mechanism underlying the DSSC performance improvement. Specifically, the equivalent circuit model was employed to derivate the internal resistances, which was consistent with the experimental results. It was found that the sintered cells exhibited a higher series resistance and a lower shunt resistance than the un-sintered ones, suggesting the higher photocurrent density might result from the larger amount of dye loading.

Studies on Nanostructure ITO Thin Films on Silicon Solar Cells

2013 ◽  
Vol 678 ◽  
pp. 365-368
Author(s):  
Rangasamy Balasundraprabhu ◽  
E.V. Monakhov ◽  
N. Muthukumarasamy ◽  
B.G. Svensson
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Solar Cell ◽  
Short Circuit ◽  
Silicon Solar Cells ◽  
Shunt Resistance ◽  
Cell Parameters ◽  
Ito Film ◽  
Ito Thin Films ◽  
Ito Films

Nanostructure ITO thin films have been deposited on well cleaned glass and silicon substrates using dc magnetron sputtering technique. The ITO films are post annealed in air using a normal heater setup in the temperature range 100 - 400 °C. The ITO film annealed at 300°C exhibited optimum transparency and resistivity values for device applications. The thickness of the ITO thin films is determined using DEKTAK stylus profilometer. The sheet resistance and resistivity of the ITO films were determined using four probe technique. Finally, the optimized nanostructure ITO layers are incorporated on silicon solar cells and the efficiency of the solar cell are found to be in the range 12-14%. Other solar cell parameters such as fill factor(FF), open circuit voltage(Voc),Short circuit current(Isc), series resistance(Rs) and shunt resistance(Rsh) have been determined. The effect of ITO film thickness on silicon solar cells is also observed.

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