Black silicon layer formation for application in solar cells

2006 ◽  
Vol 90 (18-19) ◽  
pp. 3085-3093 ◽  
Author(s):  
J.S. Yoo ◽  
I.O. Parm ◽  
U. Gangopadhyay ◽  
Kyunghae Kim ◽  
S.K. Dhungel ◽  
...  
Keyword(s):  
Solar Cells ◽  
Silicon Layer ◽  
Black Silicon ◽  
Layer Formation

scholarly journals Black Silicon Layer Formation using Radio-Frequency Multi-Hollow Cathode Plasma System and Its Application in Solar Cell

2003 ◽  
Vol 4 (5) ◽  
pp. 10-14
Author(s):  
U. Gangopadhyay ◽  
Kyung-Hae Kim ◽  
S.K. Dhungel ◽  
D. Mangalaraj ◽  
J.H. Park ◽  
...  
Keyword(s):  
Solar Cell ◽  
Radio Frequency ◽  
Hollow Cathode ◽  
Silicon Layer ◽  
Black Silicon ◽  
Layer Formation ◽  
Cathode Plasma ◽  
Plasma System

Interfacial quality improvement of Cu(In,Ga)Se2thin film solar cells by Cu-depletion layer formation

2016 ◽  
Vol 9 (9) ◽  
pp. 092301 ◽  
Author(s):  
Takahito Nishimura ◽  
Soma Toki ◽  
Hiroki Sugiura ◽  
Kazuyoshi Nakada ◽  
Akira Yamada
Keyword(s):  
Quality Improvement ◽  
Solar Cells ◽  
Depletion Layer ◽  
Layer Formation

p-type nc-SiOx:H emitter layer for silicon heterojunction solar cells grown by rf-PECVD

2015 ◽  
Vol 1770 ◽  
pp. 7-12 ◽  
Author(s):  
Henriette A. Gatz ◽  
Yinghuan Kuang ◽  
Marcel A. Verheijen ◽  
Jatin K. Rath ◽  
Wilhelmus M.M. (Erwin) Kessels ◽  
...  
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Material Properties ◽  
Crystalline Silicon ◽  
Silicon Layer ◽  
Nanocrystalline Silicon ◽  
Emitter Layer ◽  
Heterojunction Solar Cells ◽  
P Type ◽  
Silicon Heterojunction Solar Cells

ABSTRACTSilicon heterojunction solar cells (SHJ) with thin intrinsic layers are well known for their high efficiencies. A promising way to further enhance their excellent characteristics is to enable more light to enter the crystalline silicon (c-Si) absorber of the cell while maintaining a simple cell configuration. Our approach is to replace the amorphous silicon (a-Si:H) emitter layer with a more transparent nanocrystalline silicon oxide (nc-SiOx:H) layer. In this work, we focus on optimizing the p-type nc-SiOx:H material properties, grown by radio frequency plasma enhanced chemical vapor deposition (rf PECVD), on an amorphous silicon layer.20 nm thick nanocrystalline layers were successfully grown on a 5 nm a-Si:H layer. The effect of different ratios of trimethylboron to silane gas flow rates on the material properties were investigated, yielding an optimized material with a conductivity in the lateral direction of 7.9×10-4 S/cm combined with a band gap of E04 = 2.33 eV. Despite its larger thickness as compared to a conventional window a-Si:H p-layer, the novel layer stack of a-Si:H(i)/nc-SiOx:H(p) shows significantly enhanced transmission compared to the stack with a conventional a-Si:H(p) emitter. Altogether, the chosen material exhibits promising characteristics for implementation in SHJ solar cells.

scholarly journals Toward a planar black silicon technology for 50 μm-thin crystalline silicon solar cells

2016 ◽  
Vol 24 (18) ◽  
pp. A1224 ◽  
Author(s):  
Jae-Won Song ◽  
Yoon-Ho Nam ◽  
Min-Joon Park ◽  
Bongyoung Yoo ◽  
Jun-Sik Cho ◽  
...  
Keyword(s):  
Solar Cells ◽  
Crystalline Silicon ◽  
Silicon Solar Cells ◽  
Black Silicon ◽  
Crystalline Silicon Solar Cells ◽  
Silicon Technology

scholarly journals Morphology and FT IR spectra of porous silicon

2017 ◽  
Vol 68 (7) ◽  
pp. 53-57 ◽  
Author(s):  
Martin Kopani ◽  
Milan Mikula ◽  
Daniel Kosnac ◽  
Jan Gregus ◽  
Emil Pincik
Keyword(s):  
Porous Silicon ◽  
Ir Spectra ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Layer Formation ◽  
Porous Si ◽  
Ft Ir ◽  
P Type ◽  
Type Sample ◽  
Ftir Investigation

AbstractThe morphology and chemical bods of p-type and n-type porous Si was compared. The surface of n-type sample is smooth, homogenous without any features. The surface of p-type sample reveals micrometer-sized islands. FTIR investigation reveals various distribution of SiOxHycomplexes in both p-and n-type samples. From the conditions leading to porous silicon layer formation (the presence of holes) we suggest both SiOxHyand SiFxHycomplexes in the layer.

High-efficiency black silicon tunnel oxide passivating contact solar cells through modifying the nano-texture on micron-pyramid surface

2021 ◽  
Vol 233 ◽  
pp. 111409
Author(s):  
Jiahui Xu ◽  
Cheng Chen ◽  
Cui Liu ◽  
Jia Chen ◽  
Zhifeng Liu ◽  
...  
Keyword(s):  
Solar Cells ◽  
High Efficiency ◽  
Black Silicon

scholarly journals Mass Production Test of Solar Cells and Modules Made of 100% UMG Silicon. 20.76% Record Efficiency

Energies ◽  
2019 ◽  
Vol 12 (8) ◽  
pp. 1495 ◽  
Author(s):  
Forniés ◽  
Ceccaroli ◽  
Méndez ◽  
Souto ◽  
Pérez Vázquez ◽  
...  
Keyword(s):  
Solar Cells ◽  
Value Chain ◽  
Mass Production ◽  
Industrial Test ◽  
Black Silicon ◽  
Production Test ◽  
Average Efficiency ◽  
Silicon Purification ◽  
Production Campaign ◽  
Upgraded Metallurgical Grade Silicon

For more than 15 years FerroAtlantica (now Ferroglobe) has been developing a method of silicon purification to obtain Upgraded Metallurgical Grade Silicon (UMG-Si) for PV solar application without blending. After many improvements and optimizations, the final process has clearly demonstrated its validity in terms of quality and costs. In this paper the authors present new results stemming from a first mass-production campaign and a detailed description of the purification process that results in the tested UMG-Si. The subsequent steps in the value chain for the wafer, cell and module manufacturing are also described. Two independent companies, among the Tier-1 solar cells producers, were selected for the industrial test, each using a different solar cell technology: Al-BSF and black silicon + PERC. Cells and modules were manufactured in conventional production lines and their performances compared to those obtained with standard polysilicon wafers produced in the same lines and periods. Thus, for Al-BSF technology, the average efficiency of solar cells obtained with UMG-Si was (18.4 ± 0.4)% compared to 18.49% obtained with polysilicon-made wafers. In the case of black silicon + PERC, the average efficiency obtained with UMG-Si was (20.1 ± 0.6)%, compared to 20.41% for polysilicon multicrystalline wafers.

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