Monte Carlo simulation of energy loss and collection of hot charge carriers, first step towards a more realistic hot-carrier solar energy converter

2006 ◽  
Vol 90 (14) ◽  
pp. 2107-2128 ◽  
Author(s):  
Matthias Neges ◽  
Klaus Schwarzburg ◽  
Frank Willig
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Solar Energy ◽  
Energy Loss ◽  
Charge Carriers ◽  
Energy Converter ◽  
Hot Carrier

scholarly journals C-beta energy converter efficiency modeling

2019 ◽  
Vol 222 ◽  
pp. 02012
Author(s):  
Oleg Kuznetsov ◽  
Viktor Chepurnov ◽  
Albina Gurskaya ◽  
Mikhail Dolgopolov ◽  
Sali Radzhapov
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Monte Carlo Method ◽  
Theoretical Models ◽  
Maximum Efficiency ◽  
Equivalent Circuits ◽  
Optimal Parameters ◽  
Energy Converter ◽  
Electron Hole ◽  
The Monte Carlo Method

To construct beta converters with maximum efficiency it is necessary to carry out the theoretical calculation in order to determine their optimal parameters - the geometry of the structure, the thickness of the deposition of the radioisotope layer, the depth and the width of the p-n junction, and others. To date, many different theoretical models and calculations methods had been proposed. There are fairly simple theoretical models based on the Bethe-Bloch formula and the calculation of the rate of generation of electron-hole pairs, and on calculations by equivalent circuits. Also, the Monte-Carlo method is used for theoretical modeling of beta converters. This paper explores beta converter optimization using the Monte-Carlo method. The purpose of the study is to conduct Monte-Carlo simulation of the beta converter to determine its optimal parameters.

EFFECTS OF SURFACE LOSS IN REELS SPECTRA OF SILVER

1997 ◽  
Vol 04 (05) ◽  
pp. 955-958 ◽  
Author(s):  
K. TÖKÉSI ◽  
L. KÖVÉR ◽  
D. VARGA ◽  
J. TÓTH ◽  
T. MUKOYAMA
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Energy Loss ◽  
Electron Scattering ◽  
Primary Beam ◽  
Monte Carlo Simulation Technique ◽  
Surface Normal ◽  
Beam Incidence ◽  
Polycrystalline Silver ◽  
Electron Energy Loss

The energy distribution of the electrons backscattered in the direction of the surface normal of polycrystalline silver samples was studied using reflected electron energy loss spectroscopy (REELS) at 200 eV and 2 keV primary beam energies. For modeling the electron scattering processes, the Monte Carlo simulation technique was used and the REELS spectra were calculated at various (25°, 50° and 75°, with respect to the surface normal) angles of primary beam incidence. The effects of the surface energy loss process in REELS are evaluated from the comparison of the experimental and simulated spectra.

CHANNELING ENERGY LOSS IN SILICON BY USING NUMERICAL AND EXPERIMENTAL METHODS

2011 ◽  
Vol 25 (28) ◽  
pp. 2171-2181 ◽  
Author(s):  
OMAR EL BOUNAGUI ◽  
HASSANE ERRAMLI
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Energy Loss ◽  
Single Crystal ◽  
Experimental Methods ◽  
Silicon Single Crystal ◽  
Experimental Results ◽  
Monte Carlo Simulation Program ◽  
Shed Light ◽  
Good Agreement

A Monte Carlo simulation program was developed to calculate the variations of the channeled to random electronic stopping powers of He + in an energy 4 MeV in silicon single crystal along the major 〈100〉, 〈110〉 and 〈111〉 axes. This paper discusses both simulation and experimental results that shed light on the contribution of these factors. Results obtained by our simulation are in good agreement with the experimental results.

Monte Carlo simulation of hot carrier transport in III-N LEDs

2015 ◽  
Vol 14 (2) ◽  
pp. 382-397 ◽  
Author(s):  
Pyry Kivisaari ◽  
Jani Oksanen ◽  
Jukka Tulkki ◽  
Toufik Sadi
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Carrier Transport ◽  
Hot Carrier
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