Phosphorus-diffused silicon solar cell emitters with plasma enhanced chemical vapor deposited silicon carbide

2005 ◽  
Vol 87 (1-4) ◽  
pp. 667-674 ◽  
Author(s):  
A. Orpella ◽  
M. Vetter ◽  
R. Ferré ◽  
I. Martín ◽  
J. Puigdollers ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Solar Cell ◽  
Silicon Solar Cell ◽  
Chemical Vapor ◽  
Chemical Vapor Deposited

The SiNx films process research by plasma-enhanced chemical vapor deposition in crystalline silicon solar cells

2017 ◽  
Vol 31 (16-19) ◽  
pp. 1744101 ◽  
Author(s):  
Bitao Chen ◽  
Yingke Zhang ◽  
Qiuping Ouyang ◽  
Fei Chen ◽  
Xinghua Zhan ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Solar Cell ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Silicon Solar Cell ◽  
Crystalline Silicon ◽  
Chemical Vapor ◽  
Double Layers ◽  
Crystalline Silicon Solar Cell

SiNx thin film has been widely used in crystalline silicon solar cell production because of the good anti-reflection and passivation effect. We can effectively optimize the cells performance by plasma-enhanced chemical vapor deposition (PECVD) method to change deposition conditions such as temperature, gas flow ratio, etc. In this paper, we deposit a new layer of SiNx thin film on the basis of double-layers process. By changing the process parameters, the compactness of thin films is improved effectively. The NH3passivation technology is augmented in a creative way, which improves the minority carrier lifetime. In sight of this, a significant increase is generated in the photoelectric performance of crystalline silicon solar cell.

Ultraprecision Surface Grinding of Chemical Vapor Deposited Silicon Carbide for X-Ray Mirrors Using Resinoid-Bonded Diamond Wheels

CIRP Annals ◽  
1999 ◽  
Vol 48 (1) ◽  
pp. 277-280 ◽  
Author(s):  
Y. Namba ◽  
H. Kobayashi ◽  
H. Suzuki ◽  
K. Yamashita ◽  
N. Taniguchi
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor ◽  
Surface Grinding ◽  
X Ray ◽  
Chemical Vapor Deposited

scholarly journals The structure of chemical vapor deposited silicon carbide

1977 ◽  
Vol 40 ◽  
pp. 57-72 ◽  
Author(s):  
J. Chin ◽  
P.K. Gantzel ◽  
R.G. Hudson
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor ◽  
Chemical Vapor Deposited
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