Investigation of the fiber-to-planar waveguide coupler as a sensor for measuring the optical properties of metal films

2005 ◽  
Vol 117 (1) ◽  
pp. 82-87 ◽  
Author(s):  
Kwang Taek Kim ◽  
In Soo Jung ◽  
Jae Pyung Mah ◽  
Kyung-Rak Sohn
2003 ◽  
Vol 42 (Part 1, No. 11) ◽  
pp. 6910-6915 ◽  
Author(s):  
Kwang Taek Kim ◽  
Dae Sung Yoon ◽  
Cheol Ho Kim ◽  
Jae Pyung Mah

1992 ◽  
Vol 281 ◽  
Author(s):  
Yang Zuoya ◽  
B. L. Weiss ◽  
G. Shao ◽  
F. Namavar

ABSTRACTThe effect of the Si:Ge ratio in SiGe/Si heterostructures on the structural and optical properties of SiGe/Si planar waveguide are reported here for Ge concentrations from 1 to 33.6%. The high propagation loss at 1.15 pm is due to band edge absorption, which increases as the Ge concentration increases, while the loss at longer wavelengths (1.523 pm) increases with decreasing Si concentration, due to the reduced optical confinement of the waveguide structure.


2000 ◽  
Vol 370 (1-2) ◽  
pp. 243-247 ◽  
Author(s):  
Q Xiang ◽  
Y Zhou ◽  
B.S Ooi ◽  
Y.L Lam ◽  
Y.C Chan ◽  
...  

1994 ◽  
Vol 337 ◽  
Author(s):  
M. Simard-Normandin ◽  
A. Naem ◽  
M. Saran

ABSTRACTSilicides are used widely in microelectronic fabrication, yet there are very little data available regarding their optical constants at most wavelengths, and specifically at those of interest to G-line and I-line lithography. We have studied extensively the optical properties of Ti, Co, as metal films and as silicide films formed at various temperatures, and of CVD (chemical vapour deposition) W. Using spectroscopic ellipsometry at two angles of incidence, we have calculated the complex index of refraction N = (n, k) of these films every 10nm at 68 wavelengths between 230 and 900nm. These data are necessary to model accurately the reflectivity of wafers to study the effects of various thermal and surface treatments on silicide growth and to set exposure times for lithography. They also allow the use of reflectivity vs X as a non-contact method to map film thicknesses across wafers within the patterned devices themselves.


1981 ◽  
Vol 79 (2) ◽  
pp. 133-136 ◽  
Author(s):  
S. Santucci ◽  
P. Picozzi ◽  
L. Paoletti ◽  
F. Tangucci

2006 ◽  
Vol 126 (2) ◽  
pp. 335-339 ◽  
Author(s):  
Kwang Taek Kim ◽  
Kyu Hyu Lee ◽  
Sueng Hwangbo ◽  
Kyung Rak Sohn

2002 ◽  
Vol 80 (8) ◽  
pp. 1349-1351 ◽  
Author(s):  
T. J. Richardson ◽  
J. L. Slack ◽  
B. Farangis ◽  
M. D. Rubin

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