Atomic-scale observation of defects motion in van der Waals layered chalcogenide based materials

2019 ◽  
Vol 166 ◽  
pp. 154-158 ◽  
Author(s):  
Andriy Lotnyk ◽  
Torben Dankwort ◽  
Isom Hilmi ◽  
Lorenz Kienle ◽  
Bernd Rauschenbach
Keyword(s):  
Van Der Waals ◽  
Atomic Scale ◽  
Layered Chalcogenide

scholarly journals Atomic-Scale Carving of Nanopores into a van der Waals Heterostructure with Slow Highly Charged Ions

ACS Nano ◽  
2020 ◽  
Vol 14 (8) ◽  
pp. 10536-10543 ◽  
Author(s):  
Janine Schwestka ◽  
Heena Inani ◽  
Mukesh Tripathi ◽  
Anna Niggas ◽  
Niall McEvoy ◽  
...  
Keyword(s):  
Van Der Waals ◽  
Highly Charged Ions ◽  
Atomic Scale ◽  
Van Der Waals Heterostructure ◽  
Slow Highly Charged Ions ◽  
Charged Ions

scholarly journals Self‐organized van der Waals epitaxy of layered chalcogenide structures

2015 ◽  
Vol 252 (10) ◽  
pp. 2151-2158 ◽  
Author(s):  
Yuta Saito ◽  
Paul Fons ◽  
Alexander V. Kolobov ◽  
Junji Tominaga
Keyword(s):  
Van Der Waals ◽  
Self Organized ◽  
Layered Chalcogenide

scholarly journals First Principle Study on Atomic Scale Structures of Cathode in Aluminium-ion Battery Using Various van der Waals Corrections

2020 ◽  
Vol 213 ◽  
pp. 01023
Author(s):  
Kaihao Geng ◽  
Haining Cao ◽  
Meng-Chang Lin
Keyword(s):  
Density Functional ◽  
Van Der Waals ◽  
Structural Features ◽  
Atomic Scale ◽  
First Principle ◽  
Functional Theory ◽  
Principle Calculation ◽  
First Principle Calculation ◽  
Aluminium Ion ◽  
Scale Structures

There is still controversy on the atomistic configuration of aluminium-ion batteries (AIB) cathode when using first principle calculation based on density functional theory (DFT). We examined the relevant cathodic structures of Al/graphite battery by employing several van der Waals (vdW) corrections. Among them, DFT-TS method was determined to be a better dispersion correction in correctly rendering structural features already found through experiment investigations. The systematic comparison paved the way to the choice of vdW parameters in first principle calculation of graphitic electrode.

scholarly journals A Chemical Approach to 2D-2D Heterostructures Beyond Van Der Waals: High-Throughput On-Device Covalent Connection of MoS2 and Graphene

2021 ◽  
Author(s):  
Manuel Vázquez Sulleiro ◽  
Aysegul Develioglu ◽  
Ramiro Quirós-Ovies ◽  
Natalia Martín Sabanés ◽  
I. Jénnifer Gómez ◽  
...  
Keyword(s):  
Field Effect Transistors ◽  
Van Der Waals ◽  
Single Layer ◽  
Atomic Scale ◽  
Single Layer Graphene ◽  
Bifunctional Molecule ◽  
Chemical Approach ◽  
Direct Growth ◽  
Anchor Points ◽  
Scale Control

<p>The most widespread method for the synthesis of 2D-2D heterostructures is the direct growth of one material on top of the other. Alternatively, one can manually stack flakes of different materials. Both methods are limited to one crystal/device at a time and involve interfacing the 2D materials through van der Waals forces, to the point that all these materials are known as van der Waals heterostructures. Synthetic chemistry is the paradigm of atomic-scale control, yet its toolbox remains unexplored for the construction of 2D-2D heterostructures. Here, we describe how to covalently connect 2H-MoS<sub>2</sub> flakes to several single-layer graphene field-effect transistors simultaneously, and show that the final electronic properties of the MoS<sub>2</sub>-graphene heterostructure are dominated by the molecular interface. We use a bifunctional molecule with two chemically orthogonal anchor points, selective for sulphides and carbon-based materials. Our experiments highlight the potential of the chemical approach to build 2D-2D heterostructures beyond van der Waals. </p>

scholarly journals Evidence for s -wave pairing with atomic scale disorder in the van der Waals superconductor NaSn2As2

2018 ◽  
Vol 98 (2) ◽  
Author(s):  
K. Ishihara ◽  
T. Takenaka ◽  
Y. Miao ◽  
O. Tanaka ◽  
Y. Mizukami ◽  
...  
Keyword(s):  
Van Der Waals ◽  
Atomic Scale ◽  
S Wave ◽  
Wave Pairing

Atomic scale structure and chemistry of Bi2Te3/GaAs interfaces grown by metallorganic van der Waals epitaxy

2013 ◽  
Vol 102 (8) ◽  
pp. 081601 ◽  
Author(s):  
J. Houston Dycus ◽  
Ryan M. White ◽  
Jonathan M. Pierce ◽  
Rama Venkatasubramanian ◽  
James M. LeBeau
Keyword(s):  
Van Der Waals ◽  
Scale Structure ◽  
Atomic Scale ◽  
Atomic Scale Structure

scholarly journals Atomic scale chemical ordering in franckeite—a natural van der Waals superlattice

2021 ◽  
Vol 34 (5) ◽  
pp. 055403
Author(s):  
Hannes Zschiesche ◽  
Ayse Melis Aygar ◽  
Brian Langelier ◽  
Thomas Szkopek ◽  
Gianluigi A Botton
Keyword(s):  
Atomic Structure ◽  
Van Der Waals ◽  
Experimental Studies ◽  
Deep Understanding ◽  
Advanced Characterization ◽  
Atom Probe ◽  
Dark Field ◽  
Atomic Scale ◽  
Characterization Methods ◽  
Chemical Ordering

Abstract The mineral franckeite is a naturally occurring van der Waals superlattice which has recently attracted attention for future applications in optoelectronics, biosensors and beyond. Furthermore, its stacking of incommensurately modulated 2D layers, the pseudo tetragonal Q-layer and the pseudo hexagonal H-layer, is an experimentally accessible prototype for the development of synthetic van der Waals materials and of advanced characterization methods to reveal new insights in their structure and chemistry at the atomic scale that is crucial for deep understanding of its properties. While some experimental studies have been undertaken in the past, much is still unknown on the correlation between local atomic structure and chemical composition within the layers. Here we present an investigation of the atomic structure of franckeite using state-of-the-art high-angle annular dark-field (HAADF) scanning transmission electron microscopy (STEM) and atom probe tomography (APT). With atomic-number image contrast in HAADF STEM direct information about both the geometric structure and its chemistry is provided. By imaging samples under different zone axes within the van der Waals plane, we propose refinements to the structure of the Q-layer and H-layer, including several chemical ordering effects that are expected to impact electronic structure calculations. Additionally, we observe and characterize stacking faults which are possible sources of differences between experimentally determined properties and calculations. Furthermore, we demonstrate advantages and discuss current limitations and perspectives of combining TEM and APT for the atomic scale characterization of incommensurately modulated von der Waals materials.

Sign in / Sign up

Export Citation Format

Share Document