Point defect interactions with Guinier-Preston zones in Al-Cu based alloys: Vacancy mediated GPZ to θ′-phase transformation

2019 ◽  
Vol 165 ◽  
pp. 123-127 ◽  
Author(s):  
M.V. Petrik ◽  
Y.N. Gornostyrev ◽  
P.A. Korzhavyi
Keyword(s):  
Phase Transformation ◽  
Point Defect ◽  
Defect Interactions

A review of solute-point defect interactions in vanadium and its alloys: first-principles modeling and simulation

Tungsten ◽  
2021 ◽  
Vol 3 (1) ◽  
pp. 38-57
Author(s):  
Peng-Bo Zhang ◽  
Ji-Jun Zhao ◽  
Ting-Ting Zou ◽  
Rui-Huan Li ◽  
Peng-Fei Zheng ◽  
...  
Keyword(s):  
Modeling And Simulation ◽  
Point Defect ◽  
First Principles ◽  
Defect Interactions

Point defect interactions with crystal interfaces

1984 ◽  
Vol 144 (1) ◽  
pp. 96-109 ◽  
Author(s):  
A.G. Crocker ◽  
J.I. Akhter ◽  
H.L. Tatham
Keyword(s):  
Point Defect ◽  
Defect Interactions ◽  
Crystal Interfaces

Point Defect Interactions and Vacancy Cluster Formation in Alkali Halide Crystals

1992 ◽  
Vol 134 (2) ◽  
pp. 351-358 ◽  
Author(s):  
A. V. Gektin ◽  
V. Ya. Serebryanny ◽  
N. V. Shiran
Keyword(s):  
Point Defect ◽  
Alkali Halide ◽  
Cluster Formation ◽  
Vacancy Cluster ◽  
Defect Interactions ◽  
Alkali Halide Crystals

scholarly journals Lattice Damage in Ion-Implanted Compound Semiconductors and Its Effect on Electrical Activation

1993 ◽  
Vol 300 ◽  
Author(s):  
T. E. Haynes ◽  
R. Morton ◽  
S. S. Lau
Keyword(s):  
Point Defect ◽  
Compound Semiconductors ◽  
Electrical Activation ◽  
Electrical Performance ◽  
Ion Channeling ◽  
Independent Observations ◽  
Lattice Damage ◽  
Defect Interactions ◽  
Ion Species ◽  
Ion Implanted

ABSTRACTIn recent years, a number of experimental observations have indicated that interactions between mobile point defects generated during ion implantation play an important role in the damage production in Ill-V compound semiconductors, and particularly GaAs. This paper reviews a set of such observations based on ion channeling measurements of the lattice damage in GaAs implanted with Si ions. Selected independent observations are also surveyed to illustrate the importance of point-defect interactions. Taken together, these show that at least two contributions to the lattice damage must often be considered: a “prompt” contribution attributed to direct-impact amorphization, and a “delayed” contribution attributed to point-defect clustering. New measurements are then described which show the different effects that these two damage components have on the electrical activation in annealed, Siimplanted GaAs. The aim is to indicate the potential to exploit the balance between these two damage contributions in order to improve the electrical performance and reproducibility of ion-implanted and annealed layers. Finally, the applicability of these concepts to other ion species and other compound semiconductors (GaP and InP) is briefly discussed.

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