scholarly journals Solute partitioning in multi-component γ/γ′ Co–Ni-base superalloys with near-zero lattice misfit

2016 ◽  
Vol 113 ◽  
pp. 185-189 ◽  
Author(s):  
S. Meher ◽  
L.J. Carroll ◽  
T.M. Pollock ◽  
M.C. Carroll
Keyword(s):  
Lattice Misfit ◽  
Solute Partitioning

Temporal Evolution of γ Precipitate in Haynes 282 During Ageing – Growth and Coarsening Kinetics, Solute Partitioning and Lattice Misfit

2020 ◽  
Author(s):  
Shreya Mukherjee ◽  
Sudip Kumar Sarkar ◽  
Sarita Ahlawat ◽  
Aniruddha Biswas ◽  
Gopi K. Mandal ◽  
...  
Keyword(s):  
Temporal Evolution ◽  
Lattice Misfit ◽  
Solute Partitioning ◽  
Coarsening Kinetics

Effects of substrate quality and annealing on defect structures at GaAs/Si interfaces

1987 ◽  
Vol 45 ◽  
pp. 340-341
Author(s):  
H. L. Tsai ◽  
J. W. Lee
Keyword(s):  
Growth Process ◽  
Molecular Beam ◽  
Substrate Surface ◽  
Lattice Misfit ◽  
Device Fabrication ◽  
Silicon Substrates ◽  
Defect Structures ◽  
Gaas Film ◽  
Substrate Quality ◽  
Gaas On Si

Growth of GaAs on Si using epitaxial techniques has been receiving considerable attention for its potential application in device fabrication. However, because of the 4% lattice misfit between GaAs and Si, defect generation at the GaAs/Si interface and its propagation to the top portion of the GaAs film occur during the growth process. The performance of a device fabricated in the GaAs-on-Si film can be degraded because of the presence of these defects. This paper describes a HREM study of the effects of both the substrate surface quality and postannealing on the defect propagation and elimination.The silicon substrates used for this work were 3-4 degrees off [100] orientation. GaAs was grown on the silicon substrate by molecular beam epitaxy (MBE).

The wustite-spinel interface

1987 ◽  
Vol 45 ◽  
pp. 268-269
Author(s):  
S.R. Summerfelt ◽  
C.B. Carter
Keyword(s):  
Solid State ◽  
Solid State Reaction ◽  
Strain Energy ◽  
Matrix Material ◽  
Lattice Misfit ◽  
Solid State Reactions ◽  
Oxygen Sublattice ◽  
Large Particles ◽  
Small Lattice ◽  
Coherent Interfaces

The wustite-spinel interface can be viewed as a model interface because the wustite and spinel can share a common f.c.c. oxygen sublattice such that only the cations distribution changes on crossing the interface. In this study, the interface has been formed by a solid state reaction involving either external or internal oxidation. In systems with very small lattice misfit, very large particles (>lμm) with coherent interfaces have been observed. Previously, the wustite-spinel interface had been observed to facet on {111} planes for MgFe2C4 and along {100} planes for MgAl2C4 and MgCr2O4, the spinel then grows preferentially in the <001> direction. Reasons for these experimental observations have been discussed by Henriksen and Kingery by considering the strain energy. The point-defect chemistry of such solid state reactions has been examined by Schmalzried. Although MgO has been the principal matrix material examined, others such as NiO have also been studied.

Epitaxial Growth in Dislocation-Free Strained Alloy Films

2002 ◽  
Vol 715 ◽  
Author(s):  
Zhi-Feng Huang ◽  
Rashmi C. Desai
Keyword(s):  
Deposition Rate ◽  
Elastic Moduli ◽  
Composition Dependence ◽  
Critical Thickness ◽  
Lattice Misfit ◽  
Misfit Strain ◽  
Joint Stability ◽  
Alloy Films ◽  
The Stability ◽  
Stability Results

AbstractThe morphological and compositional instabilities in the heteroepitaxial strained alloy films have attracted intense interest from both experimentalists and theorists. To understand the mechanisms and properties for the generation of instabilities, we have developed a nonequilibrium, continuum model for the dislocation-free and coherent film systems. The early evolution processes of surface pro.les for both growing and postdeposition (non-growing) thin alloy films are studied through a linear stability analysis. We consider the coupling between top surface of the film and the underlying bulk, as well as the combination and interplay of different elastic effects. These e.ects are caused by filmsubstrate lattice misfit, composition dependence of film lattice constant (compositional stress), and composition dependence of both Young's and shear elastic moduli. The interplay of these factors as well as the growth temperature and deposition rate leads to rich and complicated stability results. For both the growing.lm and non-growing alloy free surface, we determine the stability conditions and diagrams for the system. These show the joint stability or instability for film morphology and compositional pro.les, as well as the asymmetry between tensile and compressive layers. The kinetic critical thickness for the onset of instability during.lm growth is also calculated, and its scaling behavior with respect to misfit strain and deposition rate determined. Our results have implications for real alloy growth systems such as SiGe and InGaAs, which agree with qualitative trends seen in recent experimental observations.

Comparison of Solute Partitioning between Nanocrystalline Sputtered Thin Films and Ball Milled Cu-Zr

2019 ◽  
Author(s):  
Xuyang Zhou ◽  
Jennifer D. Schuler ◽  
Charlette M. Grigorian ◽  
David Tweddle ◽  
Timothy Rupert ◽  
...  
Keyword(s):  
Thin Films ◽  
Solute Partitioning

Anomalous Effect of Lattice Misfit on the Coarsening Behavior of Multicomponent L12 Phase

2020 ◽  
Author(s):  
Feng He ◽  
Kaiwei Zhang ◽  
Guma Yeli ◽  
Yang Tong ◽  
Daixiu Wei ◽  
...  
Keyword(s):  
Lattice Misfit ◽  
Anomalous Effect ◽  
Coarsening Behavior

Effects of microstructure and lattice misfit on creep life of Ni-based single crystal superalloy during long-term thermal exposure

2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Wenyan Gan ◽  
Hangshan Gao ◽  
Haiqing Pei ◽  
Zhixun Wen
Keyword(s):  
Single Crystal ◽  
Rupture Life ◽  
Precipitation Amount ◽  
Lattice Misfit ◽  
Thermal Exposure ◽  
Phase Evolution ◽  
Creep Rupture ◽  
Simultaneous Increase ◽  
Creep Life ◽  
The Matrix

Abstract According to the microstructural evolution during longterm thermal exposure at 1100 °C, the creep rupture life of Ni-based single crystal superalloys at 980 °C/270 MPa was evaluated. The microstructure was characterized by means of scanning electron microscopy, X-ray diffraction and related image processing methods. The size of γ’ precipitates and the precipitation amount of topologically close-packed increased with the increase in thermal exposure time, and coarsening of the γ’ precipitates led to the simultaneous increase of the matrix channel width. The relationship between the creep rupture life and the lattice misfit of γ/γ’, the coarsening of γ’ precipitate and the precipitation of TCP phase are systematically discussed. In addition, according to the correlation between γ’ phase evolution and creep characteristics during thermal exposure, a physical model is established to predict the remaining creep life.

Time Dependence of γ/γ' Lattice Mismatch in Creep-Deformed Single Crystal Superalloy SC16 at 1173 K

2007 ◽  
Vol 539-543 ◽  
pp. 3059-3063 ◽  
Author(s):  
G. Schumacher ◽  
N. Darowski ◽  
I. Zizak ◽  
Hellmuth Klingelhöffer ◽  
W. Chen ◽  
...  
Keyword(s):  
Single Crystal ◽  
Lattice Mismatch ◽  
Lattice Misfit ◽  
Peak Position ◽  
Single Crystal Superalloy ◽  
Tensile Creep ◽  
Full Width ◽  
X Ray Diffraction ◽  
X Ray ◽  
Time Period

The profiles of 001 and 002 reflections have been measured at 1173 K as a function of time by means of X-ray diffraction (XRD) on tensile-creep deformed specimens of single crystal superalloy SC16. Decrease in line width (full width at half maximum: FWHM) by about 7 % and increase in peak position by about 3x10-4 degrees was detected after 8.5x104 s. Broadening of the 002 peak profile indicated a more negative value of the lattice misfit after the same time period. The results are discussed in the context of the anisotropic arrangement of dislocations at the γ/γ’ interfaces during creep and their rearrangement during the thermal treatment at 1173 K.

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